Amplifier, High Gain
7.0—15.0 GHz
Features
♦
♦
♦
♦
♦
1.2 Watt Saturated Output Power Level
25 dB Typical Gain
Variable Drain Voltage (5-10V) Operation
GaAs MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0056-DIE
903209 —
Preliminary Information
Primary Applications
♦
Multiple Band Point-to-Point Radio
♦
SatCom
♦
ISM Band
Description
The MAAPGM0057-Die is a four-stage power amplifier with an on chip bias
network. This product is fully matched to 50 ohms on both the input and out-
put. It can be used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is
100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors, multiple implant capabil-
ity enabling power, low-noise, switch and digital FETs on a single chip, and
polyimide scratch protection for ease of use with automated manufacturing
processes. The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when employed in her-
metic packaging.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, I
DQ
≈
540 mA
2
, P
in
= 6 dBm
Parameter
Bandwidth
Output Power
1-dB Compression Point
Power-Added Efficiency
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Noise Figure
1.
2.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
f
P
OUT
P1dB
PAE
G
VSWR
VSWR
I
GG
I
DD
NF
Typical
7.0 - 15.0
31
30
18
26
2.1:1
1.6:1
<5
< 950
10
Units
GHz
dBm
dBm
%
dB
mA
mA
dB
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 to –1.5V to achieve indicated I
DQ
.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Gain
7.0—15.0 GHz
Maximum Operating Conditions
3
Parameter
Input Power
Gate Supply Voltage
Drain Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
GG
V
DD
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
15.0
-3.5
+12.0
810
6.1
180
-55 to +150
310
MAAPGM0056-DIE
903209 —
Preliminary Information
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Gate Supply Voltage
Drain Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
GG
V
DD
P
IN
T
J
Θ
JC
T
B
15
Note 4
Min
-2.5
4.0
Typ
-2
10.0
8.0
Max
-1.5
10.0
12.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 10 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ –2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Gain
7.0—15.0 GHz
50
45
40
35
30
25
20
15
10
5
0
6
7
8
9
10
11
12
13
14
15
50.0
MAAPGM0056-DIE
903209 —
Preliminary Information
50
45
40
5V
8V
10V
Pout
PAE
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
Output Power (dBm)
Output Power (dBm)
35
30
25
20
15
10
5
0
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
PAE (%)
Frequency (GHz)
Figure 2. 1dB Compression Point vs. Frequency and Drain Voltage at 25% IDSS.
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
D
=8V and
P
in
=6dBm.
50
45
40
5V
8V
10V
30
SSG
IVSWR
OVSWR
6
26
5
Output Power (dBm)
35
30
25
20
15
10
5
0
6
7
8
9
10
11
12
13
14
15
Gain (dB)
22
4
18
3
14
2
10
6
7
8
9
10
11
12
13
14
15
1
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at 25% IDSS.
Frequency (GHz)
Figure 4. Small Signal Gain and Input and Output VSWR at V
D
=5V.
40
38
36
34
32
12
5V
8V
10V
11
10
9
5V
8V
10V
Gain (dB)
28
26
24
22
20
18
16
14
12
10
6
7
8
9
10
11
12
13
14
15
Noise Figure (dB)
30
8
7
6
5
4
3
2
1
0
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
Frequency (GHz)
Figure 6. Noise Figure vs. Frequency and Drain Voltage.
Figure 5. Small Signal Gain vs. Frequency and Drain Voltage.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
VSWR
Amplifier, High Gain
7.0—15.0 GHz
40
38
36
34
32
5V
8V
10V
1.00
0.90
0.80
0.70
5V
8V
10V
MAAPGM0056-DIE
903209 —
Preliminary Information
Output Power (dBm)
28
26
24
22
20
18
16
14
12
10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
Drain Current (A)
30
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-10 -9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
Input Power (dBm)
Figure 7. Output Power vs. Input Power and Drain Voltage at 8 GHz.
Input Power (dBm)
Figure 8. Drain Current vs. Input Power and Drain Voltage at 8 GHz.
40
38
36
34
32
5V
8V
10V
1.00
0.90
0.80
0.70
5V
8V
10V
Output Power (dBm)
28
26
24
22
20
18
16
14
12
10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
Drain Current (A)
30
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
Input Power (dBm)
Figure 8. Output Power vs. Input Power and Drain Voltage at 10 GHz.
Input Power (dBm)
Figure 10. Drain Current vs. Input Power and Drain Voltage at 10 GHz.
40
38
36
34
32
1.00
5V
8V
10V
0.90
0.80
0.70
5V
8V
10V
Output Power (dBm)
Drain Current (A)
30
28
26
24
22
20
18
16
14
12
10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-10 -9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
Input Power (dBm)
Input Power (dBm)
Figure 12. Drain Current vs. Input Power and Drain Voltage at 12 GHz.
Figure 11. Output Power vs. Input Power and Drain Voltage at 12 GHz.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, High Gain
7.0—15.0 GHz
Mechanical Information
Chip Size: 3.93 x 2.93 x 0.075 mm
1.603mm.
0.670mm.
MAAPGM0056-DIE
903209 —
Preliminary Information
(
154 x 75 x 3 mils)
2.507mm.
3.929mm.
2.826mm.
G DNG
:
2.930mm.
VD1
GND: G
G DN G
:
VD2
G ND:G
GND:G
G ND:G
GND: G
2.804mm.
GND:G
VD3
G ND: G
GND:G
GND:G
G ND: G
G ND: G
GND: G
GND: G
G ND: G
2.784mm.
G ND:G
G ND:G
GND: G
GND: G
GND:G
G ND:G
GND:G
GND:G
1.968mm.
GND:G
G ND: G
GND: G
G ND: G
1.134mm.
VG
GND:G
GND:G
G ND: G
G ND: G
0
0.124mm.
3.831mm.
0
Figure 13. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
Gate Supply Voltage VGG
Drain Supply Voltage VDD
Size (μm)
100 x 200
200 x 150
200 x 150
Size (mils)
4x8
8x6
8x6
GND:G
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
G DNG
:
GND:G
G ND:G
GND:G
GND: G
G ND :G
G ND:G
GND:G
G DN G
:
G DNG
:
G DN G
:
GND:G
IN
GND:G
G ND: G
G ND:G
GND:G
GND:G
GN D:G
G ND:G
GND :G
GND:G
GN D:G
GND:G
GND:G
G ND: G
GN D:G
G ND:G
GND:G
OUT
G ND:G
1.968mm
GND: G
GND :G
GND: G
G ND: G
G ND: G
GND:G
GND:G
G ND: G
GND:G
GND:G
GND:G
G ND: G
GND:G
GND:G
GND:G
G ND :G
GND: G
G ND:G
G ND: G
GND: G
GND:G
GND: G
GND:G
G ND:G
1.375mm.
5
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
