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MAC218A6

TRIAC, TRIAC

器件类别:模拟混合信号IC    触发装置   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
Reach Compliance Code
_compli
JESD-609代码
e0
端子面层
Tin/Lead (Sn/Pb)
触发设备类型
TRIAC
文档预览
MAC218
Triacs
Silicon Bidirectional Thyristors
Triacs are designed primarily for full-wave ac control applications,
such as light dimmers, motor controls, heating controls and power
supplies.
Blocking Voltage to 800 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
TO-220 Construction Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC218 Series) or
Four Modes (MAC218A Series)
http://onsemi.com
MT2
G
MT1
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage
(1)
(Gate Open, T
J
= 25 to 125°C)
MAC218-4, MAC218A4
MAC218-6, MAC218A6
MAC218-8, MAC218A8
MAC218-10, MAC218A10
Symbol
V
DRM
Value
200
400
600
800
8
100
40
16
0.35
4
−40
to +125
−40
to +150
Amps
Amps
A
2
s
Watts
Watt
Amps
°C
°C
Unit
Volts
On-State Current RMS
(Conduction Angle = 360°, T
C
= +80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T
C
= 80°C, preceded and followed by rated current)
Fusing Current
(t = 8.3 ms)
Peak Gate Power
(T
C
= +80°C, Pulse Width = 2
μs)
Average Gate Power
(T
C
= +80°C, t = 8.3 ms)
Peak Gate Trigger Current
(Pulse Width = 1
μs)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GTM
T
J
T
stg
1.. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 1
1
Publication Order Number:
MAC218/D
MAC218
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(V
D
= Rated V
DRM
, gate open)
T
J
= 25°C
T
J
= 125°C
Symbol
I
DRM
Min
Typ
1.7
Max
10
2
2
Unit
μA
mA
Volts
mA
Peak On-State Voltage (Either Direction)
(I
TM
= 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
t
2%)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 12Ω)
Trigger Mode
MT2(+), Gate(+); MT2(+), Gate(−); MT2(−), Gate(−)
MT2(−), Gate(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated V
DRM
, R
L
= 10 kΩ, T
J
= +125°C)
MT2(+), G(+); MT2(−), G(−); MT2(+), G(−)
MT2(−), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(V
D
= 24 Vdc, Gate Open,
Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage
(V
D
= Rated V
DRM
, I
TM
= 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80°C)
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Voltage Rise, Gate Open,
T
J
= 125°C)
V
TM
I
GT
V
GT
0.2
0.2
I
H
50
75
Volts
0.9
0.9
1.1
1.4
2
2
2
2.5
50
mA
dv/dt(c)
5
V/μs
dv/dt
100
V/μs
FIGURE 1 — CURRENT DERATING
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
TC, MAXIMUM ALLOWABLE CASE
TEMPERATURE (
°
C)
115
105
95
85
75
10
8.0
6.0
4.0
2.0
0
FIGURE 2 — POWER DISSIPATION
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
T(RMS)
, RMS ON STATE CURRENT (AMPS)
I
T(RMS)
RMS ON STATE CURRENT (AMPS)
http://onsemi.com
2
MAC218
VGT , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS)
IGT, NORMALIZED GATE TRIGGER CURRENT (mA)
FIGURE 3 — NORMALIZED GATE TRIGGER
CURRENT
5.0
OFF-STATE VOLTAGE = 12 V
3.0
2.0
1
2
3
4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
FIGURE 4 — NORMALIZED GATE TRIGGER
VOLTAGE
OFF-STATE VOLTAGE = 12 V
QUADRANT 4
1.0
0.7
QUADRANT
QUADRANTS
1
2
3
0.5
−60
−40
−20
0
20
40
60
80
100
120
140
0.4
−60
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 5 — NORMALIZED HOLDING CURRENT
I H , NORMALIZED HOLDING CURRENT (mA)
2.0
GATE OPEN
MAIN TERMINAL #1
POSITIVE
1.0
0.7
0.5
MAIN TERMINAL #2
POSITIVE
0.3
0.2
−60
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
http://onsemi.com
3
MAC218
PACKAGE DIMENSIONS
CASE 221A-04
(TO−220AB)
−T−
B
F
T
C
SEATING
PLANE
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
Q
H
Z
L
V
G
4
1 2 3
A
U
K
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
R
J
D
N
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
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N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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4
MAC218/D
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参数对比
与MAC218A6相近的元器件有:MAC218-10、MAC218A10、MAC218-6、MAC218-4、MAC218A4。描述及对比如下:
型号 MAC218A6 MAC218-10 MAC218A10 MAC218-6 MAC218-4 MAC218A4
描述 TRIAC, TRIAC TRIAC, TRIAC TRIAC, TRIAC TRIAC, TRIAC TRIAC, TRIAC TRIAC, TRIAC
Reach Compliance Code _compli unknown not_compliant unknown unknow unknow
触发设备类型 TRIAC TRIAC TRIAC TRIAC TRIAC TRIAC
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
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