DISCRETE SEMICONDUCTORS
DATA SHEET
MAC223 series
Triacs
Product specification
July 2001
Philips Semiconductors
Product specification
Triacs
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.
MAC223 series
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAC223
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX MAX. UNIT
A6
400
25
230
A8
600
25
230
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MAC223
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
≤
91 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 30 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MIN.
A6
400
1
25
190
230
180
50
50
50
10
2
5
5
0.5
150
125
MAX.
A8
600
1
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
UNIT
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
July 2001
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
MAC223 series
TYP.
-
-
60
MAX.
1.0
1.4
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+
T2-
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
0.25
-
TYP.
6
10
11
23
8
30
18
15
7
12
1.3
0.7
0.4
0.1
MAX.
50
50
50
75
40
60
40
60
30
30
1.55
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 30 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dV
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 95 ˚C; I
T(RMS)
= 25 A;
dI
com
/dt = 9 A/ms; gate open circuit
I
TM
= 30 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
MIN.
100
-
-
TYP.
300
10
2
MAX.
-
-
-
UNIT
V/µs
V/µs
µs
July 2001
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
MAC223 series
40
Ptot / W
Tmb(max) / C
85
30
25
IT(RMS) / A
BTA140
91 C
= 180
30
1
120
90
60
95
20
105
20
30
15
10
10
115
5
0
125
30
0
5
10
15
IT(RMS) / A
20
25
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
50
40
30
100
dI
T
/dt limit
T2- G+ quadrant
IT
T
10
10us
I TSM
time
20
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
150
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
91˚C.
VGT(Tj)
VGT(25 C)
200
1.6
1.4
1.2
1
0.8
Tj initial = 25 C max
100
50
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
July 2001
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
MAC223 series
5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
80
70
IT / A
Tj = 125 C
Tj = 25 C
BTA140
4
60
Vo = 1.073 V
Rs = 0.015 ohms
typ
max
50
3
40
2
30
20
1
10
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W)
BTA140
3
2.5
2
1.5
1
1
unidirectional
bidirectional
0.1
P
D
t
p
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dV/dt (V/us)
1000
3
2.5
2
1.5
1
0.5
off-state dV/dt limit
100
dIcom/dt =
25 A/ms
10
20
15
12
9.0
7.0
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
July 2001
5
Rev 1.000
