MAC97 Series
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO−92 package which is readily adaptable for use in
automatic insertion equipment.
Features
http://onsemi.com
•
One−Piece, Injection−Molded Package
•
Blocking Voltage to 600 Volts
•
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
TRIACS
0.8 AMPERE RMS
200 thru 600 VOLTS
MT2
G
MT1
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
•
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
•
These are Pb−Free Devices*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage
(T
J
=
−40
to +110°C) (Note 1)
Sine Wave 50 to 60 Hz, Gate Open
MAC97A4
MAC97A6
MAC97A8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +50°C)
Peak Non−Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
= 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Voltage
(t
v
2.0
ms,
T
C
= +80°C)
Peak Gate Power
(t
v
2.0
ms,
T
C
= +80°C)
Average Gate Power
(T
C
= 80°C, t
v
8.3 ms)
Peak Gate Current
(t
v
2.0
ms,
T
C
= +80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
200
400
600
I
T(RMS)
0.6
A
Value
Unit
V
12
MARKING
DIAGRAM
1
MAC
97Ax
AYWWG
G
3
STRAIGHT LEAD
BULK PACK
TO−92 (TO−226)
CASE 029
STYLE 12
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
I
TSM
I
2
t
V
GM
P
GM
P
G(AV)
I
GM
T
J
T
stg
8.0
A
0.26
5.0
5.0
0.1
1.0
−40
to +110
−40
to +150
A
2
s
V
W
W
A
°C
°C
MAC97Ax = Device Code
x = 4, 6, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
Main Terminal 1
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 10
1
Publication Order Number:
MAC97/D
MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
75
200
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage
(I
TM
=
".85
A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Non−Trigger Voltage
(V
D
= 12 V, R
L
= 100
W,
T
J
= 110°C)
All Four Quadrants
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, T
C
= 50°C)
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, T
C
= 110°C, Gate Open, Exponential Waveform
dV/dt(c)
−
5.0
−
V/ms
V
TM
I
GT
−
−
−
−
V
GT
−
−
−
−
V
GD
0.1
.66
.77
.84
.88
−
2.0
2.0
2.0
2.5
−
V
−
−
−
−
5.0
5.0
5.0
7.0
V
−
−
1.9
V
mA
T
J
= 25°C
T
J
= +110°C
I
DRM
, I
RRM
−
−
−
−
10
100
mA
mA
Symbol
Min
Typ
Max
Unit
I
H
t
gt
−
−
1.5
2.0
10
−
mA
ms
dv/dt
−
25
−
V/ms
http://onsemi.com
2
MAC97 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
MAC97 Series
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
110
I T(RMS) , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
T
= 30°
60°
DC
80
180°
70
60
50
40
30
0
a
a
= CONDUCTION ANGLE
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
a
120°
90°
110
100
90
80
70
60
50
40
30
20
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0
a
a
= CONDUCTION ANGLE
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
a
DC
180°
120°
T
= 30°
60°
90°
100
90
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
P (AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
1.2
1.0
0.8
0.6
a
a
= CONDUCTION ANGLE
120°
a
DC
180°
6.0
4.0
T
J
= 110°C
2.0
25°C
1.0
90°
0.2
T
= 30°
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
60°
ITM , INSTANTANEOUS ON‐STATE CURRENT (AMP)
0.4
0.6
0.4
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.2
Figure 3. Power Dissipation
0.1
0.06
0.04
0.02
0.01
0.006
0.4
1.2
2.0
2.8
3.6
4.4
5.2
6.0
V
TM
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
Figure 4. On−State Characteristics
http://onsemi.com
4
MAC97 Series
R (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
I TSM , PEAK SURGE CURRENT (AMPS)
10
Z
QJC(t)
= R
QJC(t)
@
r(t)
0.1
5.0
3.0
2.0
T
J
= 110°C
f = 60 Hz
CYCLE
Surge is preceded and followed by rated current.
0.01
0.1
1.0
10
100
1S10
3
1S10
4
1.0
1.0
2.0
3.0
5.0
10
30
50
100
t, TIME (ms)
NUMBER OF CYCLES
Figure 5. Transient Thermal Response
100
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
-40 -25
-10
5
20
35
50
65
80
95
110
Figure 6. Maximum Allowable Surge Current
Q4
Q3
Q2
Q1
10
Q4
Q3
Q2
Q1
1
0.3
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
100
10
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
IL , LATCHING CURRENT (mA)
10
Q2
IH , HOLDING CURRENT (mA)
MT2 Negative
1
MT2 Positive
Q4
1
Q1
Q3
0
-40 -25
-10
5
20
35
50
65
80
95
110
0.1
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Latching Current versus
Junction Temperature
Figure 10. Typical Holding Current versus
Junction Temperature
http://onsemi.com
5
实时操作系统RTOS
