MAC9DG, MAC9MG,
MAC9NG
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
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Blocking Voltage to 800 Volts
On−State Current Rating of 8.0 Amperes RMS at 100°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dv/dt − 500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO−220 Package
High Commutating di/dt − 6.5 A/ms minimum at 125°C
These Devices are Pb−Free and are RoHS Compliant*
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC9D
MAC9M
MAC9N
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 100°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
I
T(RMS)
I
TSM
8.0
80
A
A
Value
Unit
V
1
2
TO−220
CASE 221A
STYLE 4
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAC9xG
AYWW
3
I
2
t
P
GM
P
G(AV)
T
J
T
stg
26
16
0.35
−40 to +125
−40 to +150
A
2
sec
1
W
W
°C
°C
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
Device
MAC9DG
MAC9MG
MAC9NG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 4
Publication Order Number:
MAC9/D
MAC9DG, MAC9MG, MAC9NG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25°C
T
J
= 125°C
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
11 A Peak)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±150
mA)
Latching Current (V
D
= 24 V, I
G
= 50 mA)
MT2(+), G(+); MT2(−), G(−)
MT2(+), G(−)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (V
D
= 12 V, R
L
= 100
W,
T
J
= 125°C)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(V
D
= 400 V, I
TM
= 4.4 A, Commutating dv/dt = 18 V/ms,
Gate Open, T
J
= 125°C, f = 250 Hz, No Snubber)
C
L
= 10
mF
L
L
= 40 mH
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
(di/dt)
c
6.5
−
A/ms
V
TM
I
GT
10
10
10
I
H
I
L
−
−
V
GT
0.5
0.5
0.5
V
GD
0.2
−
−
0.69
0.77
0.72
1.5
1.5
1.5
V
20
30
50
80
V
−
16
18
22
30
50
50
50
50
mA
mA
−
1.2
1.6
V
mA
I
DRM
,
I
RRM
−
−
−
−
0.01
2.0
mA
Symbol
Min
Typ
Max
Unit
dv/dt
500
−
−
V/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
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MAC9DG, MAC9MG, MAC9NG
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC9DG, MAC9MG, MAC9NG
125
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (
°
C)
120
α
= 120, 90, 60, 30°
115
α
= 180°
110
DC
105
12
DC
10
180°
8
6
4
90°
2
0
α
= 30°
60°
120°
100
0
1
3
4
5
6
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
2
7
8
0
1
2
3
4
5
6
I
T(RMS)
, ON‐STATE CURRENT (AMP)
7
8
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
100
1
TYPICAL AT
T
J
= 25°C
MAXIMUM @ T
J
= 125°C
0.1
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1 · 10
4
Figure 4. Thermal Response
MAXIMUM @ T
J
= 25°C
1
40
35
I H, HOLDING CURRENT (mA)
30
25
20
15
MT2 NEGATIVE
10
MT2 POSITIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
5
5
- 50
- 30
- 10
10
90
30
50
70
T
J
, JUNCTION TEMPERATURE (°C)
110
130
Figure 3. On-State Characteristics
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Figure 5. Holding Current Variation
MAC9DG, MAC9MG, MAC9NG
100
Q2
Q3
Q1
10
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
- 50
Q3
Q1
Q2
1
- 50
- 30
- 10
10
30
50
70
90
T
J
, JUNCTION TEMPERATURE (°C)
110
130
- 30
- 10
10
70
30
50
90
T
J
, JUNCTION TEMPERATURE (°C)
110
130
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/
μ
s)
5000
(dv/dt) c , CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
μ
s)
4.5K
4K
3.5K
3K
2.5K
2K
1.5K
1K
500
0
1
MT2 POSITIVE
10
100
R
G
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
1000
MT2 NEGATIVE
100
T
J
= 125°C
10
100°C
75°C
t
w
V
DRM
f=
1
2 t
w
6f I
TM
1000
(di/dt)
c
=
1
10
15
20
25
30
35
40
45
50
55
60
(di/dt)
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
-
+
MT2
1N914 51
W
G
MT1
CHARGE
200 V
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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