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MAP4KE120CAe3

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-41
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
最大击穿电压
126 V
最小击穿电压
114 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
400 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
1.13 W
认证状态
Not Qualified
最大重复峰值反向电压
102 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MP4KE6.8A – MP4KE400CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
400 Watt
Transient Voltage Suppressors
DESCRIPTION
This family of high-reliability, plastic packaged Transient Voltage Suppressors offer high
reliability at an affordable price. Standoff voltage values range from 5.8 to 342 volts and 5% or
10% tolerance options are available. Source control is standard and three increasingly
stringent screening options for enhanced reliability are available.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Optional screening in reference to MIL-PRF-19500 is also available. Refer to
High Reliability Non-
Hermetic Product
portfolio for more details on Microsemi screening options.
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant versions available.
DO-41
(DO-204AL)
Package
Also available in:
J-bend Package
(surface mount)
MSMBJ5.0A – MSMBJ170A
APPLICATIONS / BENEFITS
Suppresses transients up to 400 watts @ 10/1000
µs
(see
Figure 1).
2
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF.
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1: MP4KE5.0A to MP4KE91CA
Class 2: MP4KE5.0A to MP4KE47ACA
Class 3: MP4KE5.0A to MP4KE24CA
Class 4: MP4KE5.0A to MP4KE12CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1: MP4KE5.0A to MP4KE30CA
Class 2: MP4KE5.0A to MP4KE15CA
Gull-wing Package
(surface mount)
MSMBG5.0A – MSMBG170A
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Leads
(1)
@ 3/8 inch (10 mm) from body
(2)
Peak Pulse Power Dissipation @ 10/1000
µs
o (3)
Off-State Power Dissipation
@ T
L
= +25 C
o (4)
@ T
A
= +25 C
o
Forward Voltage @ 25 C with 8.3 ms half-sine wave
(unidirectional only)
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
D
V
F
T
SP
Value
-65 to +150
50
400
2.5
1.13
3.5
260
Unit
o
C
o
C/W
W
W
V
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
Notes:
1. Or 110 °C/W junction to ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and
track width 1 mm, length 25 mm.
2. With impulse repetition rate (duty factor) of 0.01 % or less (see
Figures 1, 2 and 3
for t
W
, waveform and
derating effects).
3. At 3/8 (10 mm) lead length from body.
4. On FR4 PC board with 110C/W junction to ambient with 4 mm2 copper pads (1 oz) and track width 1
mm and length 25 mm.
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 1 of 6
MP4KE6.8A – MP4KE400CA(e3)
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode indicated by band. Bi-directional not marked.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.3 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M (controlled product)
MA (Avionics grade)
MX ( reference JANTX)
MXL (MX Lite)
(*See
High Reliability Non-
Hermetic Product
portfolio)
Point 4 kilowatt
Encapsulated Plastic
Package
P4K
E
6.8
C
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolerance
A = 5% tolerance level
Blank = 10% tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Stand-off Voltage Rating
Symbol
α
V(BR)
C
I
(BR)
I
D
I
PP
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
P
PP
V
(BR)
V
C
V
WM
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 2 of 6
MP4KE6.8A – MP4KE400CA(e3)
ELECTRICAL CHARACTERISTICS
@ 25
o
C
WORKING
STAND OFF
VOLTAGE
VWM
Volts
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102.0
111.0
128.0
136.0
145.0
154.0
171.0
185.0
214.0
256.0
300.0
342.0
BREAKDOWN
VOLTAGE
V(BR) @
I(BR)
MIN
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105.0
114.0
124.0
143.0
152.0
162.0
171.0
190.0
209.0
237.0
285.0
333.0
380.0
MAX
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.0
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105.0
116.0
126.0
137.0
158.0
168.0
179.0
189.0
210.0
231.0
263.0
315.0
368.0
420.0
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAXIMUM
CLAMPING
VOLTAGE
VC@ IPP
Volts
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
MAXIMUM
STANDBY
CURRENT ID
@ VWM
µA
500
200
100
20
5
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
Amps
38
35
33
30
28
26
24
22
19
18
16
14.5
13
12
11
9.5
9.0
8.0
7.5
7.0
6.2
5.7
5.2
4.7
4.4
3.9
3.5
3.2
2.9
2.6
2.4
2.2
1.95
1.8
1.7
1.6
1.5
1.0
1.0
1.0
1.0
1.0
MAXIMUM
TEMPERATURE
COEFFICIENT
of V(BR)
α
V(BR)
% / °C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
PART
NUMBER
(Note 2)
MP4KE6.8A
MP4KE7.5A
MP4KE8.2A
MP4KE9.1A
MP4KE10A
MP4KE11A
MP4KE12A
MP4KE13A
MP4KE15A
MP4KE16A
MP4KE18A
MP4KE20A
MP4KE22A
MP4KE24A
MP4KE27A
MP4KE30A
MP4KE33A
MP4KE36A
MP4KE39A
MP4KE43A
MP4KE47A
MP4KE51A
MP4KE56A
MP4KE62A
MP4KE68A
MP4KE75A
MP4KE82A
MP4KE91A
MP4KE100A
MP4KE110A
MP4KE120A
MP4KE130A
MP4KE150A
MP4KE160A
MP4KE170A
MP4KE180A
MP4KE200A
MP4KE220A
MP4KE250A
MP4KE300A
MP4KE350A
MP4KE400A
NOTE 1:
Forward Voltage (V
F
) @ 30 amps peak, 8.3 ms sine wave equal to 3.5 volts maximum for MP4KE6.8A to 200A (excluding bidirectional).
NOTE 2:
For bidirectional construction, indicate a CA suffix after part number. Bidirectional capacitance is half that shown in
Figure 4
at zero
volts.
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 3 of 6
MP4KE6.8A – MP4KE400CA(e3)
GRAPHS
P
PP
-Peak Pulse Power (kW)
t
w
– Pulse Width
FIGURE 1
Peak Pulse Power vs. Pulse Time
Pulse Current in Percent of I
PP
t – Time – ms
FIGURE 2
Pulse Waveform for Exponential Surge
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 4 of 6
MP4KE6.8A – MP4KE400CA(e3)
GRAPHS
Peak Pulse Power (P
PP
) or continuous
Average Power in Percent of 25°C Rating
Lead or Ambient Temperature °C
FIGURE 3
Derating Curve
C – Capacitance - Picofarads
V
(BR)
-
Breakdown Voltage - Volts
FIGURE 4
MP4KE Typical Capacitance vs. Breakdown Voltage (Unipolar)
RF01006, Rev. B (5/8/13)
©2013 Microsemi Corporation
Page 5 of 6
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