首页 > 器件类别 > 电路保护

MASMBG80Ae3

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

器件类别:电路保护   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
MASMBG80Ae3 在线购买

供应商:

器件:MASMBG80Ae3

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
产品种类
Product Category
ESD Suppressors / TVS Diodes
制造商
Manufacturer
Microsemi
RoHS
Details
端接类型
Termination Style
SMD/SMT
封装 / 箱体
Package / Case
DO-215AA-2
系列
Packaging
Bulk
工厂包装数量
Factory Pack Quantity
1
单位重量
Unit Weight
0.003527 oz
文档预览
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
Available
600 Watt Surface Mount
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
The MSMB 5.0A – MSMB 170CA series of surface mount 600 watt transient voltage suppressors
provide a selection of standoff voltages (Vwm) from 5.0 to 170 V. These high-reliability devices are
available in either unidirectional or bidirectional versions. The SMBG Gull-wing design in the DO-
215AA package is ideal for visible solder connections. The SMBJ
J-bend design in the DO-
214AA package allows for greater PC board mounting density.
It is available with SnPb or
RoHS compliant matte-tin plating.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Enhanced reliability screening in reference to MIL-PRF-19500 is also available.
Refer to
High Reliability Up-Screened Plastic Products Portfolio
for more details on the screening
options.
(See
part nomenclature
for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant versions available.
DO-215AA
Gull-wing Package
DO-214AA
J-bend Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & RF induced voltage pulses.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MSB 5.0A to MSMB 120CA
Class 2: MSMB 5.0A to MSMB 60CA
Class 3: MSMB 5.0A to MSMB 30CA
Class 4: MSMB 5.0A to MSMB 15CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MSMB 5.0A to MSMB 36CA
Class 2: MSMB 5.0A to MSMB 18CA
Also available in:
Commercial Grade
SMBJ5.0A – SMBJ170CAe3
T-18 package
(axial-leaded)
P6KE6.8A – P6KE200CAe3
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
10/1000us
(1)
Rated Average Power Dissipation
@ T
L
< 25 ºC
@ T
A
= 25 ºC
Unidirectional
T
clamping
(0 volts to V
(BR)
min)
Bidirectional
(3)
Forward Surge Current
Solder Temperature @ 10 s
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
M(AV)
Value
-65 to +150
25
90
600
5
1.38
< 100
<5
100
260
o
o
Unit
o
C
C/W
C/W
W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
FS
T
SP
ps
ns
A (pk)
o
C
Notes:
1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
pad layout
on last page).
2. With impulse repetition rate (duty factor) of 0.01 % or less (also
Figure 1 and 4).
3. Peak impulse of 8.3 ms half-sine wave (unidirectional only).
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 1 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode end banded.
TAPE & REEL option: Standard per EIA-481-1-A (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.1 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
High Reliability Up-
Screened Plastic Products
Portfolio)
Surface Mount Package
600 W Power Level
Lead Form
G = Gull-Wing
J = J-Bend
SM
B
G
5.0
C
A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
+/- 5% Tolerance Level
Polarity
C = bidirectional
Blank = unidirectional
Stand-Off Voltage (V
WM
)
(see
Electrical Characteristics
table)
Symbol
V
W M
P
PP
V
(BR)
I
D
I
PP
V
C
SYMBOLS & DEFINITIONS
Definition
Working Peak (Standoff) Voltage - The maximum peak voltage that can be applied over the operating temperature
range. This is also referred to as standoff voltage.
Peak Pulse Power - Rated random recurring peak impulse power dissipation.
Breakdown Voltage - The minimum voltage the device will exhibit at a specified current.
Standby Current - The current at the rated standoff voltage (V
WM
).
Peak Pulse Current - The peak current during the impulse.
Clamping Voltage - Clamping voltage at I
PP
(peak pulse current) at the specified pulse conditions (typically shown as
maximum value).
Breakdown Current – The current used for measuring breakdown voltage V
(BR)
.
I
BR
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 2 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
ELECTRICAL CHARACTERISTICS
@ 25 ºC
REVERSE
STAND-OFF
VOLTAGE
VWM
V
5
6
6.5
7
7.5
8
8.5
9
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
BREAKDOWN VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
V
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
A
65.2
58.3
53.6
50
46.5
44.1
41.7
39
35.3
33
30.2
27.9
25.8
24
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.7
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
MAXIMUM
STANDBY
CURRENT
ID @ VWM
µA
800
800
500
200
100
50
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
PART NUMBER
Gull-Wing
MSMBG5.0A
MSMBG6.0A
MSMBG6.5A
MSMBG7.0A
MSMBG7.5A
MSMBG8.0A
MSMBG8.5A
MSMBG9.0A
MSMBG10A
MSMBG11A
MSMBG12A
MSMBG13A
MSMBG14A
MSMBG15A
MSMBG16A
MSMBG17A
MSMBG18A
MSMBG20A
MSMBG22A
MSMBG24A
MSMBG26A
MSMBG28A
MSMBG30A
MSMBG33A
MSMBG36A
MSMBG40A
MSMBG43A
MSMBG45A
MSMBG48A
MSMBG51A
MSMBG54A
MSMBG58A
MSMBG60A
MSMBG64A
MSMBG70A
MSMBG75A
MSMBG78A
MSMBG85A
MSMBG90A
MSMBG100A
MSMBG110A
MSMBG120A
MSMBG130A
MSMBG150A
MSMBG160A
MSMBG170A
J-Bend
MSMBJ5.0A
MSMBJ6.0A
MSMBJ6.5A
MSMBJ7.0A
MSMBJ7.5A
MSMBJ8.0A
MSMBJ8.5A
MSMBJ9.0A
MSMBJ10A
MSMBJ11A
MSMBJ12A
MSMBJ13A
MSMBJ14A
MSMBJ15A
MSMBJ16A
MSMBJ17A
MSMBJ18A
MSMBJ20A
MSMBJ22A
MSMBJ24A
MSMBJ26A
MSMBJ28A
MSMBJ30A
MSMBJ33A
MSMBJ36A
MSMBJ40A
MSMBJ43A
MSMBJ45A
MSMBJ48A
MSMBJ51A
MSMBJ54A
MSMBJ58A
MSMBJ60A
MSMBJ64A
MSMBJ70A
MSMBJ75A
MSMBJ78A
MSMBJ85A
MSMBJ90A
MSMBJ100A
MSMBJ110A
MSMBJ120A
MSMBJ130A
MSMBJ150A
MSMBJ160A
MSMBJ170A
V(BR)
V
6.40 – 7.00
6.67 – 7.37
7.22 – 7.98
7.78 – 8.60
8.33 – 9.21
8.89 – 9.83
9.44 – 10.4
10.0 – 11.1
11.1 – 12.3
12.2 – 13.5
13.3 – 14.7
14.4 – 15.9
15.6 – 17.2
16.7 – 18.5
17.8 – 19.7
18.9 – 20.9
20.0 – 22.1
22.2 – 24.5
24.4 – 26.9
26.7 – 29.5
28.9 – 31.9
31.1 – 34.4
33.3 – 36.8
36.7 – 40.6
40.0 – 44.2
44.4 – 49.1
47.8 – 52.8
50.0 – 55.3
53.3 – 58.9
56.7 – 62.7
60.0 – 66.3
64.4 – 71.2
66.7 – 73.7
71.1 – 78.6
77.8 – 86.0
83.3 – 92.1
86.7 – 95.8
94.4 – 104
100 – 111
111 – 123
122 – 135
133 – 147
144 – 159
167 – 185
178 – 197
189 – 209
@
I( BR)
mA
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 3 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS
P
PP
- Peak Pulse Power - kW
t
w
– Pulse Width µs
FIGURE 1
Peak Pulse Power vs Pulse Time
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000µs
FIGURE 2
Pulse Waveform for 10/1000 Exponential Surge
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 4 of 7
MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS
(continued)
Peak Pulse Power (P
PP
) or continuous
Power in Percent of 25°C Rating
T
L
Lead Temperature °C
FIGURE 3
Derating Curve
C – Capacitance - Picofarads
V
(BR)
- Breakdown Voltage - Volts
FIGURE 4
Typical Capacitance vs. Breakdown Voltage
NOTE: Bidirectional capacitance is half that shown at zero volts.
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 5 of 7
查看更多>
DIY音乐门铃使用单片机MSP430G2211
本来想着是否用来替代原来的门铃的(应该可以不用电路板直接把G2211放进原来门铃结构的凹槽里面的),...
wangfuchong 微控制器 MCU
关于c8051F330单片机内部温度传感器的问题
是不是所有c8051f系列单片机(内部自带温度传感器),ADC在左对齐,单端方式下产生的代码与输入...
lanshuangcheng 51单片机
飞思卡尔HCS08&coldfire v1单片机I2C教程
上个我们写的GPIO教程,适用于freescale hcs08和coldfire v1系列 飞思卡尔...
bluehacker NXP MCU
stm32 ram调试
本帖最后由 白丁 于 2014-12-21 19:26 编辑 stm32 ram调试 顶起来...
白丁 stm32/stm8
怎样在430中实现离散点趋势的判断,并将这些点用曲线连接
一个屏幕,上面依次地显示一些点,怎样将这些点按照他们的趋势把他们用曲线连接起来? 怎样实现点的曲...
本站帐号 微控制器 MCU
【2024 DigiKey 创意大赛】-
打个草稿 【2024 DigiKey 创意大赛】- 好的,等待 因为这段时间有别的事情要忙,...
donatello1996 DigiKey得捷技术专区
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消