MAX1473E__ ..................................................-40°C to +85°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (3.3V OPERATION)
(Typical
Application Circuit,
V
DD
= 3.0V to 3.6V, no RF signal applied, T
A
= -40°C to +85°C, unless otherwise noted. Typical values
are at V
DD
= 3.3V and T
A
= +25°C.) (Note 1)
PARAMETER
Supply Voltage
Supply Current
Shutdown Supply Current
Input Voltage Low
Input Voltage High
Input Logic Current High
Image Reject Select (Note 2)
DATAOUT Voltage Output Low
DATAOUT Voltage Output High
V
OL
V
OH
SYMBOL
V
DD
I
DD
I
PWRDN
V
IL
V
IH
I
IH
f
RF
= 433MHz, V
IRSEL
= V
DD
f
RF
= 375MHz, V
IRSEL
= V
DD
/2
f
RF
= 315MHz, V
IRSEL
= 0V
R
L
= 5kΩ
1.1
0.4
0.4
V
DD
- 0.4
V
V
V
DD
- 0.4
10
V
DD
- 0.4
V
DD
- 1.5
V
CONDITIONS
3.3V nominal supply
V
P WRDN
= V
DD
V
P WRDN
= 0V,
V
XTALSEL
= 0V
f
RF
= 315MHz
f
RF
= 433MHz
f
RF
= 315MHz
f
RF
= 433MHz
MIN
3.0
TYP
3.3
5.2
5.8
1.6
2.5
5.3
0.4
MAX
3.6
6.23
6.88
UNITS
V
mA
µA
V
V
µA
19-2748; Rev 6; 1/12
2
Maxim Integrated
MAX1473
315MHz/433MHz ASK Superheterodyne
Receiver with Extended Dynamic Range
DC ELECTRICAL CHARACTERISTICS (5.0V OPERATION)
(Typical
Application Circuit,
V
DD
= 4.5V to 5.5V, no RF signal applied, T
A
= -40°C to +85°C, unless otherwise noted. Typical values
are at V
DD
= 5.0V and T
A
= +25°C.) (Note 1)
PARAMETER
Supply Voltage
Supply Current
Shutdown Supply Current
Input Voltage Low
Input Voltage High
Input Logic Current High
Image Reject Select (Note 2)
DATAOUT Voltage Output Low
DATAOUT Voltage Output High
V
OL
V
OH
SYMBOL
V
DD
I
DD
I
PWRDN
V
IL
V
IH
I
IH
f
RF
= 433MHz, V
IRSEL
= V
DD
f
RF
= 375MHz, V
IRSEL
= V
DD
/2
f
RF
= 315MHz, V
IRSEL
= 0V
R
L
= 5kΩ
V
DD
- 0.4
V
DD
- 0.4
1.1
V
DD
- 1.5
0.4
0.4
V
V
V
V
DD
- 0.4
10
CONDITIONS
5.0V nominal supply
V
P WRDN
= V
DD
V
P WRDN
= 0V,
V
XTALSEL
= 0V
f
RF
= 315MHz
f
RF
= 433MHz
f
RF
= 315MHz
f
RF
= 433MHz
MIN
4.5
TYP
5.0
5.2
5.7
2.3
2.8
6.2
0.4
MAX
5.5
6.04
6.76
UNITS
V
mA
µA
V
V
µA
AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
DD
= 3.0V to 3.6V, all RF inputs are referenced to 50Ω, f
RF
= 315MHz, T
A
= -40°C to +85°C, unless
otherwise noted. Typical values are at V
DD
= 3.3V and T
A
= +25°C.) (Note 1).
PARAMETER
GENERAL CHARACTERISTICS
Startup Time
Receiver Input Frequency
Maximum Receiver Input Level
Sensitivity (Note 3)
AGC Hysteresis
LNA IN HIGH-GAIN MODE
Power Gain
Input Impedance (Note 4)
1dB Compression Point
Input-Referred 3rd-Order
Intercept
Z
IN_LNA
P1dB
LNA
IIP3
LNA
Normalized to
50Ω
f
RF
= 433MHz
f
RF
= 375MHz
f
RF
= 315MHz
16
1 - j3.4
1 - j3.9
1 - j4.7
-22
-12
dBm
dBm
dB
t
ON
f
RF
P
RFIN_MAX
Modulation depth > 18dB
P
RFIN_MIN
Peak power level
LNA gain from low to high
Time for valid signal detection after
V
P WRDN
= V
OH
300
0
-114
8
150
250
450
µs
MHz
dBm
dBm
dB
ms
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Maxim Integrated
3
MAX1473
315MHz/433MHz ASK Superheterodyne
Receiver with Extended Dynamic Range
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
DD
= 3.0V to 3.6V, all RF inputs are referenced to 50Ω, f
RF
= 315MHz, T
A
= -40°C to +85°C, unless
otherwise noted. Typical values are at V
DD
= 3.3V and T
A
= +25°C.) (Note 1)
PARAMETER
LO Signal Feedthrough to
Antenna
Noise Figure
LNA IN LOW-GAIN MODE
Input Impedance (Note 4)
1dB Compression Point
Input-Referred 3rd-Order
Intercept
LO Signal Feedthrough to
Antenna
Noise Figure
Power Gain
Voltage Gain Reduction
MIXER
Input-Referred 3rd-Order
Intercept
Output Impedance
Noise Figure
Image Rejection
(not Including LNA Tank)
Conversion Gain
INTERMEDIATE FREQUENCY (IF)
Input Impedance
Operating Frequency
3dB Bandwidth
RSSI Linearity
RSSI Dynamic Range
RSSI Level
RSSI Gain
AGC Threshold
LNA gain from low to high
LNA gain from high to low
P
RFIN
< -120dBm
P
RFIN
> 0dBm, AGC enabled
Z
IN_IF
f
IF
Bandpass response
330
10.7
20
±0.5
80
1.15
2.35
14.2
1.45
2.05
Ω
MHz
MHz
dB
dB
V
mV/dB
V
IIP3
MIX
Z
OUT_MIX
NF
MIX
f
RF
= 433MHz, V
IRSEL
= V
DD
f
RF
= 375MHz, V
IRSEL
= V
DD
/2
f
RF
= 315MHz, V
IRSEL
= 0V
330Ω IF filter load
-18
330
16
42
44
44
13
dB
dB
dBm
Ω
dB
AGC enabled (depends on tank Q)
NF
LNA
Z
IN_LNA
P1dB
LNA
IIP3
LNA
Normalized to
50Ω
f
RF
= 433MHz
f
RF
= 375MHz
f
RF
= 315MHz
1 - j3.4
1 - j3.9
1 - j4.7
-10
-7
-80
2
0
35
dBm
dBm
dBm
dB
dB
dB
NF
LNA
SYMBOL
CONDITIONS
MIN
TYP
-80
2
MAX
UNITS
dBm
dB
4
Maxim Integrated
MAX1473
315MHz/433MHz ASK Superheterodyne
Receiver with Extended Dynamic Range
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
DD
= 3.0V to 3.6V, all RF inputs are referenced to 50Ω, f
RF
= 315MHz, T
A
= -40°C to +85°C, unless
otherwise noted. Typical values are at V
DD
= 3.3V and T
A
= +25°C.) (Note 1)
PARAMETER
DATA FILTER
Maximum Bandwidth
DATA SLICER
Comparator Bandwidth
Output High Voltage
Output Low Voltage
CRYSTAL OSCILLATOR
f
RF
= 433MHz
Crystal Frequency (Note 5)
f
XTAL
f
RF
= 315MHz
Crystal Tolerance
Input Capacitance
Recommended Crystal Load
Capacitance
Maximum Crystal Load
Capacitance
C
LOAD
C
LOAD
From each pin to ground
V
XTALSEL
= 0V
V
XTALSEL
= V
DD
V
XTALSEL
= 0V
V
XTALSEL
= V
DD
6.6128
13.2256
4.7547
9.5094
50
6.2
3
10
MHz
MHz
ppm
pF
pF
pF
BW
CMP
100
V
DD5
0
kHz
V
V
BW
DF
100
kHz
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 1:
100% tested at T
A
= +25°C. Guaranteed by design and characterization over temperature.
Note 2:
IRSEL is internally set to 375MHz IR mode. It can be left open when the 375MHz image rejection setting is desired. A 1nF
capacitor is recommended in noisy environments.
Note 3:
BER = 2 x 10
-3
, Manchester encoded, data rate = 4kbps, IF bandwidth = 280kHz.
Note 4:
Input impedance is measured at the LNAIN pin. Note that the impedance includes the 15nH inductive degeneration con-
nected from the LNA source to ground. The equivalent input circuit is 50Ω in series with 2.2pF.
Note 5:
Crystal oscillator frequency for other RF carrier frequency within the 300MHz to 450MHz range is (f
