MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
General Description
The MAX19997A dual downconversion mixer is a versa-
tile, highly integrated diversity downconverter that pro-
vides high linearity and low noise figure for a multitude of
1800MHz to 2900MHz base-station applications. The
MAX19997A fully supports both low- and high-side LO
injection architectures for the 2300MHz to 2900MHz
WiMAX™, LTE, WCS, and MMDS bands, providing
8.7dB gain, +24dBm input IP3, and 10.3dB NF in the
low-side configuration, and 8.7dB gain, +24dBm input
IP3, and 10.4dB NF in the high-side configuration. High-
side LO injection architectures can be further extended
down to 1800MHz with the addition of one tuning ele-
ment (a shunt inductor) on each RF port.
The device integrates baluns in the RF and LO ports,
an LO buffer, two double-balanced mixers, and a pair
of differential IF output amplifiers. The MAX19997A
requires a typical LO drive of 0dBm and a supply cur-
rent guaranteed below 420mA to achieve the targeted
linearity performance.
The MAX19997A is available in a compact 6mm x 6mm,
36-pin TQFN lead-free package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from T
C
= -40°C to +100°C.
Features
o
1800MHz to 2900MHz RF Frequency Range
o
1950MHz to 3400MHz LO Frequency Range
o
50MHz to 550MHz IF Frequency Range
o
Supports Both Low-Side and High-Side LO
Injection
o
8.7dB Conversion Gain
o
+24dBm Input IP3
o
10.3dB Noise Figure
o
+11.3dBm Input 1dB Compression Point
o
70dBc Typical 2 x 2 Spurious Rejection at
P
RF
= -10dBm
o
Dual Channels Ideal for Diversity Receiver
Applications
o
Integrated LO Buffer
o
Integrated LO and RF Baluns for Single-Ended
Inputs
o
Low -3dBm to +3dBm LO Drive
o
Pin Compatible with the MAX19999 3000MHz to
4000MHz Mixer
o
Pin Similar to the MAX9995 and MAX19995/
MAX19995A 1700MHz to 2200MHz Mixers and the
MAX9985 and MAX19985A 700MHz to 1000MHz
Mixers
o
42dB Channel-to-Channel Isolation
o
Single 5.0V or 3.3V Supply
o
External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
Applications
2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
UMTS/WCDMA and cdma2000
®
3G Base
Stations
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Ordering Information
PART
MAX19997AETX+
MAX19997AETX+T
TEMP RANGE
-40°C to +100°C
-40°C to +100°C
PIN-PACKAGE
36 TQFN-EP*
36 TQFN-EP*
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
cdma2000 is a registered trademark of Telecommunications
Industry Association.
Pin Configuration/Functional Block Diagram appears at
end of data sheet.
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
19-4288; Rev 4; 1/13
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (V
CC
+ 0.3V)
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF_ and LO is DC
shorted to GND through balun)................................... ...50mA
Continuous Power Dissipation (Note 1) ..............................6.5W
Operating Case Temperature Range
(Note 4) .................................................T
C
= -40°C to +100°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PACKAGE THERMAL CHARACTERISTICS
Junction-to-Ambient Thermal Resistance (θ
JA
)
Junction-to-Case Thermal Resistance (θ
JC
)
(Notes 2, 3)...................................................................38°C/W
(Notes 1, 3)..................................................................7.4°C/W
Junction-to-Board Thermal Resistance (θ
JB
)................12.2°C/W
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
no input RF or LO signals applied, V
CC
= 4.75V to
5.25V, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, T
C
= +25°C, unless otherwise noted. R1, R4 = 750Ω, R2, R5 = 698Ω.)
PARAMETER
Supply Voltage
Total Supply Current
V
CC
(Pin 4) Supply Current
(Main and Diversity Paths)
V
CC
(Pin 10) Supply Current
(Diversity Path)
V
CC
(Pin 16) Supply Current
(Diversity Path)
V
CC
(Pin 21) Supply Current
(Main and Diversity Paths)
V
CC
(Pin 30) Supply Current
(Main Path)
V
CC
(Pin 36) Supply Current
(Main Path)
IFM Bias Supply Current (Main
Path)
IFD Bias Supply Current
(Diversity Path)
2
SYMBOL
V
CC
I
CC
V
CC
= 5.0V
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 5.25V
CONDITIONS
MIN
4.75
TYP
388
390.4
2.5
8.9
109.3
28.3
109.3
8.9
61.6
61.6
MAX
5.25
420
UNITS
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
Total bias feeding IFM- and IFM+ through
R3, L1 and L2; V
CC
= 5.25V
Total bias feeding IFD+ and IFD- through
R6, L3 and L4; V
CC
= 5.25V
Maxim Integrated
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
no input RF or LO signals applied, V
CC
= 3.0V to 3.6V,
T
C
= -40°C to +85°C. Typical values are at V
CC
= 3.3V, T
C
= +25°C, unless otherwise noted. R1, R4 = 1.1kΩ, R2, R5 = 845Ω.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
Total supply current, V
CC
= 3.3V
CONDITIONS
MIN
3.0
TYP
3.3
279
MAX
3.6
310
UNITS
V
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency Without External
Tuning
SYMBOL
f
RF
(Note 5)
See Table 2 for an outline of tuning elements
optimized for 1950MHz operation;
optimization at other frequencies within the
1800MHz to 2400MHz range can be
achieved with different component values;
contact the factory for details
(Notes 5, 6)
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the
Typical
Application Circuit,
IF matching
components affect the IF frequency range
(Notes 5, 6)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 6)
LO Drive Level
P
LO
CONDITIONS
MIN
2400
TYP
MAX
2900
UNITS
MHz
RF Frequency with External
Tuning
f
RF
1800
2400
MHz
LO Frequency
f
LO
1950
3400
MHz
100
550
MHz
IF Frequency
f
IF
50
250
-3
+3
dBm
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
V
CC
= 4.75V to 5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 2650MHz to 3250MHz, f
IF
= 350MHz,
f
RF
< f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2950MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
PARAMETER
Conversion Gain
SYMBOL
G
C
CONDITIONS
f
RF
= 2400MHz to 2900MHz,
T
C
= +25°C (Notes 8, 9, 10)
T
C
= +100°C
f
RF
= 2305MHz to 2360MHz
f
RF
= 2500MHz to 2570MHz
Conversion Gain Flatness
f
RF
= 2570MHz to 2620MHz
f
RF
= 2500MHz to 2690MHz
f
RF
= 2700MHz to 2900MHz
Gain Variation Over Temperature
Maxim Integrated
MIN
8.1
TYP
8.7
8.1
0.15
0.15
0.1
0.15
0.15
-0.01
MAX
9.3
UNITS
dB
dB
TC
CG
f
RF
= 2300MHz to 2900MHz,
T
C
= -40°C to +100°C
dB/°C
3
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
V
CC
= 4.75V to 5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 2650MHz to 3250MHz, f
IF
= 350MHz,
f
RF
< f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2950MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
PARAMETER
Input Compression Point
SYMBOL
IP
1dB
CONDITIONS
(Notes 8, 9, 11)
f
RF1
- f
RF2
= 1MHz, P
RF
= -5dBm per tone
(Notes 8, 9)
Third-Order Input Intercept Point
IIP3
f
RF
= 2600MHz, f
RF1
- f
RF2
= 1MHz,
P
RF
= -5dBm per tone, T
C
= +25°C
(Notes 8, 9)
P
RF
= -5dBm/tone, f
RF1
- f
RF2
= 1MHz,
T
C
= +100°C
Third-Order Input Intercept Point
Variation Over Temperature
f
RF1
- f
RF2
= 1MHz, T
C
= -40°C to +100°C
Single sideband, no blockers present
f
RF
= 2400MHz to 2900MHz (Notes 6, 8, 10)
Noise Figure
NF
SSB
Single sideband, no blockers present,
f
RF
= 2400MHz to 2900MHz , T
C
= +25°C
(Notes 6, 8, 10)
Single sideband, no blockers present,
T
C
= -40°C to +100°C
f
BLOCKER
= 2412MHz, P
BLOCKER
= 8dBm,
f
RF
= 2600MHz, f
LO
= 2950MHz, P
LO
=
0dBm, V
CC
= 5.0V, T
C
= +25°C (Notes 8, 12)
f
RF
= 2600MHz, f
LO
= 2950MHz,
P
RF
= -10dBm, f
SPUR
= f
LO
- 175MHz
(Note 8)
2LO - 2RF Spur
2x2
P
RF
= -10dBm, T
C
= +100°C
f
RF
= 2600MHz, f
LO
= 2950MHz,
P
RF
= -5dBm, f
SPUR
= f
LO
- 175MHz
(Notes 8, 9)
P
RF
= -5dBm, T
C
= +100°C
f
RF
= 2600MHz, f
LO
= 2950MHz,
P
RF
= -10dBm, f
SPUR
= f
LO
- 116.67MHz,
T
C
= +25°C (Note 8)
3LO - 3RF Spur
3x3
P
RF
= -10dBm, T
C
= +100°C
f
RF
= 2600MHz, f
LO
= 2950MHz,
P
RF
= -5dBm, f
SPUR
= f
LO
- 116.67MHz,
T
C
= +25°C (Notes 8, 9)
P
RF
= -5dBm, T
C
= +100°C
RF Input Return Loss
4
MIN
9.6
22.0
TYP
11.3
24
MAX
UNITS
dBm
22.5
24
dBm
24.2
±0.3
10.4
12.5
dB
10.4
11.4
dBm
Noise Figure Temperature
Coefficient
Noise Figure Under Blocking
Conditions
TC
NF
0.018
dB/°C
NF
B
22.5
25
dB
62
69
68
dBc
57
64
63
73
84
85
dBc
63
74
75
14
dB
Maxim Integrated
LO on and IF terminated into a matched
impedance
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
V
CC
= 4.75V to 5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 2650MHz to 3250MHz, f
IF
= 350MHz,
f
RF
< f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2950MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
PARAMETER
LO Input Return Loss
IF Output Impedance
Z
IF
SYMBOL
CONDITIONS
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50
,
LO driven by 50
source, IF transformed to 50 using
external components shown in the
Typical
Application Circuit
MIN
TYP
13
200
MAX
UNITS
dB
IF Output Return Loss
21
dB
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
25
T
C
= +100°C
(Notes 8, 9)
24
-28
-33
-18.5
T
C
= +100°C
RFMAIN (RFDIV) converted
power measured at IFDIV
(IFMAIN) relative to IFMAIN
(IFDIV), all unused ports
terminated to 50
38.5
-17.8
43
dB
dBm
dBm
dBm
Channel Isolation
dB
T
C
= +100°C
43.4
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit
optimized for the
standard RF band (see Table 1),
V
CC
= 4.75V to 5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
LO
= 1950MHz to 2550MHz, f
IF
= 350MHz,
f
RF
> f
LO
, T
C
= -40°C to +85°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2250MHz,
f
IF
= 350MHz, T
C
= +25°C, unless otherwise noted.) (Note 7)
PARAMETER
Conversion Gain
SYMBOL
G
C
CONDITIONS
f
RF
= 2400MHz to 2900MHz,
T
C
= +25°C (Notes 8, 9, 10)
f
RF
= 2305MHz to 2360MHz
f
RF
= 2500MHz to 2570MHz
Conversion Gain Flatness
f
RF
= 2570MHz to 2620MHz
f
RF
= 2500MHz to 2690MHz
f
RF
= 2700MHz to 2900MHz
Gain Variation Over Temperature
Input Compression Point
Maxim Integrated
MIN
8.1
TYP
8.7
0.2
0.15
0.2
0.25
0.25
-0.01
MAX
9.3
UNITS
dB
dB
TC
CG
IP
1dB
f
RF
= 2300MHz to 2900MHz, T
C
= -40°C to
+85°C
(Notes 6, 8, 11)
9.6
dB/°C
dBm
5
11.3
