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MAX8520ETP

Power Management Specialized - PMIC

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Maxim(美信半导体)

厂商官网:https://www.maximintegrated.com/en.html

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Maxim(美信半导体)
零件包装代码
QFN
包装说明
HVQCCN,
针数
20
Reach Compliance Code
not_compliant
ECCN代码
EAR99
接口集成电路类型
INTERFACE CIRCUIT
JESD-30 代码
S-XQCC-N20
JESD-609代码
e0
长度
5 mm
湿度敏感等级
1
功能数量
1
端子数量
20
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
245
认证状态
Not Qualified
座面最大高度
0.8 mm
最大供电电压
5.5 V
最小供电电压
3 V
标称供电电压
5 V
表面贴装
YES
技术
BICMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
NO LEAD
端子节距
0.65 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
5 mm
文档预览
19-2586; Rev 2; 2/11
IT
TION K
VALUA
E
BLE
AVAILA
Smallest TEC Power Drivers for Optical
Modules
General Description
The MAX8520/MAX8521 are designed to drive thermo-
electric coolers (TECs) in space-constrained optical
modules. Both devices deliver ±1.5A output current
and control the TEC current to eliminate harmful current
surges. On-chip FETs minimize external components
and high switching frequency reduces the size of exter-
nal components.
The MAX8520/MAX8521 operate from a single supply and
bias the TEC between the outputs of two synchronous
buck regulators. This operation allows for temperature
control without “dead zones” or other nonlinearities at
low current. This arrangement ensures that the control
system does not hunt when the set-point is very close
to the natural operating point, requiring a small amount
of heating or cooling. An analog control signal precisely
sets the TEC current.
Both devices feature accurate, individually-adjustable
heating current limit and cooling current limit along with
maximum TEC voltage limit to improve the reliability of
optical modules. An analog output signal monitors the
TEC current. A unique ripple cancellation scheme helps
reduce noise.
The MAX8520 is available in a 5mm x 5mm TQFN pack-
age and its switching frequency is adjustable up to
1MHz through an external resistor. The MAX8521 is
also available in a 5mm x 5mm TQFN as well as
space-saving 3mm x 3mm UCSP™ and 36-bump WLP
(3mm x 3mm) packages, with a pin-selectable switch-
ing frequency of 500kHz or 1MHz.
o
Circuit Footprint 0.31in
2
o
Low Profile Design
o
On-Chip Power MOSFETs
o
High-Efficiency Switch-Mode Design
o
Ripple Cancellation for Low Noise
o
Direct Current Control Prevents TEC Current
Surges
o
5% Accurate Adjustable Heating/Cooling Current
Limits
o
2% Accurate TEC Voltage Limit
o
No Dead Zone or Hunting at Low Output Current
o
ITEC Monitors TEC Current
o
1% Accurate Voltage Reference
o
Switching Frequency up to 1MHz
o
Synchronization (MAX8521)
Features
MAX8520/MAX8521
Ordering Information
PART
MAX8520ETP+
MAX8521EBX
MAX8521ETP+
MAX8521EWX+
TEMP RANGE
PIN-PACKAGE
-40°C to +85°C 20 TQFN-EP* 5mm x 5mm
-40°C to +85°C 6 x 6 UCSP 3mm x 3mm
-40°C to +85°C 20 TQFN-EP* 5mm x 5mm
-40°C to +85°C 36 WLP** 3mm x 3mm
Applications
SFF/SFP Modules
Fiber Optic Laser Modules
Fiber Optic Network Equipment
ATE
Biotech Lab Equipment
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed pad.
**Four
center bumps depopulated.
Typical Operating Circuit
INPUT
3V TO 5.5V
V
DD
PVDD_
FREQ
ON
OFF
TEC CURRENT
MONITOR
CURRENT-
CONTROL
SIGNAL
SHDN
ITEC
MAX8521
CTLI
COMP
REF
GND
PGND2
OS1
OS2
LX2
TEC
OUTPUT
I
TEC
=
±
1.5A
CS
LX1
PGND1
Pin Configurations appear at end of data sheet
ANALOG /DIGITAL
TEMPERATURE CONTROL
UCSP is a trademark of Maxim Integrated Products, Inc.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Smallest TEC Power Drivers for Optical
Modules
MAX8520/MAX8521
ABSOLUTE MAXIMUM RATINGS
V
DD
to GND ..............................................................-0.3V to +6V
SHDN,
MAXV, MAXIP, MAXIN,
CTLI to GND .........................................................-0.3V to +6V
COMP, FREQ, OS1, OS2, CS, REF,
ITEC to GND...........................................-0.3V to (V
DD
+ 0.3V)
PVDD1, PVDD2 to GND .............................-0.3V to (V
DD
+ 0.3V)
PVDD1, PVDD2 to V
DD
..........................................-0.3V to +0.3V
PGND1, PGND2 to GND .......................................-0.3V to +0.3V
COMP, REF, ITEC short to GND....................................Indefinite
LX Current (Note 1) ........................................±2.25A LX Current
Continuous Power Dissipation (T
A
= +70°C)
6 x 6 UCSP (derate 22mW/°C above +70°C) ...............1.75W
20-Pin 5mm x 5mm x 0.9mm TQFN (derate 20.8mW/°C
above +70°C) (Note 2)...................................................1.67W
36-Bump WLP (derate 22mW/°C above +70°C)............1.75W
Operating Temperature Range ...........................-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
Lead(Pb)-Free (TQFN, WLP)........................................+260°C
Containing Lead (UCSP)............................................. +240°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:
LX has internal clamp diodes to PGND and PVDD. Applications that forward bias these diodes should take care not to
exceed the IC’s package power dissipation limits.
Note 2:
Solders underside metal slug to PCB ground plane.
PACKAGE THERMAL CHARACTERISTICS (Note 3)
20 TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
)...............30°C/W
Junction-to-Case Thermal Resistance (θ
JC
)......................2°C/W
6x6 UCSP
Junction-to-Ambient Thermal Resistance (θ
JA
)................65.5°C/W
Junction-to-Case Thermal Resistance (θ
JC
).......................0°C/W
36 WLP
Junction-to-Ambient Thermal Resistance (θ
JA
)..................38°C/W
Junction-to-Case Thermal Resistance (θ
JC
)......................4°C/W
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= V
PVDD1
= V
PVDD2
= V
SHDN
= 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T
A
= 0°C to +85°C,
unless otherwise noted. Typical values at T
A
= +25°C.)
PARAMETER
Input Supply Range
Maximum TEC Current
Reference Voltage
Reference Load Regulation
MAXIP/MAXIN Threshold
Accuracy
V
REF
∆V
REF
V
DD
= 3V to 5.5V, I
REF
= 150µA
V
DD
= 3V to 5V, I
REF
= 10µA to 1mA
V
DD
= 5V
V
DD
= 3V
nFET On-Resistance
pFET On-Resistance
nFET Leakage
pFET Leakage
R
DS(ON-N)
R
DS(ON-P)
I
LEAK(N)
I
LEAK(P)
V
DD
= 5V, I = 0.2A
V
DD
= 3V, I = 0.2A
V
DD
= 5V, I = 0.2A
V
DD
= 3V, I = 0.2A
V
LX
= V
DD
= 5V, T
A
= +25°C
V
LX
= V
DD
= 5V T
A
= +85°C
V
LX
= 0V, T
A
= +25°C
V
LX
= 0V, T
A
= +85°C
V
MAXI_
= V
REF
V
MAXI_
= V
REF
/3
V
MAXI_
= V
REF
V
MAXI_
= V
REF
/3
140
40
143
45
SYMBOL
V
DD
CONDITIONS
MIN
3.0
±1.5
1.485
1.500
1.2
150
50
150
50
0.09
0.11
0.14
0.17
0.03
0.3
0.03
0.3
4.00
1.515
5.0
160
60
155
55
0.14
0.16
0.23
0.30
4.00
µA
µA
mV
TYP
MAX
5.5
UNITS
V
A
V
mV
2
_______________________________________________________________________________________
Smallest TEC Power Drivers for Optical
Modules
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
PVDD1
= V
PVDD2
= V
SHDN
= 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T
A
= 0°C to +85°C,
unless otherwise noted. Typical values at T
A
= +25°C.)
PARAMETER
SYMBOL
I
DD(NO
LOAD)
MAX8520/MAX8521
CONDITIONS
V
COMP
= V
REF
=
1.500V, V
DD
= 5V
V
COMP
= V
REF
=
1.500V, V
DD
= 3.3V
500kHz mode
1MHz mode
500kHz mode
1MHz mode
MIN
TYP
11
16
8
11
2
+165
MAX
14
21
11
14
3
2.80
2.70
1.2
0.6
1.2
1.10
0.6
0.56
1.2
100
+100
+5
V
DD
x
0.25
UNITS
No-Load Supply Current
mA
Shutdown Supply Current
Thermal Shutdown
UVLO Threshold
I
DD-SD
SHDN
= GND, V
DD
= 5V, (Note 5)
V
DD
rising
V
DD
falling
MAX8521, FREQ = V
DD
, V
DD
= 3V to 5V
MAX8521, FREQ = GND, V
DD
= 3V to 5V
2.50
2.40
0.8
0.4
0.8
0.76
0.4
0.36
0.7
0
-100
-5
mA
°C
V
T
SHUTDOWN
Hysteresis = 15°C
V
UVLO
2.65
2.55
1.0
0.5
1.0
0.93
0.5
0.46
Internal Oscillator Switching
Frequency
f
SW-INT
MAX8520, R
EXT
= 60kΩ, V
DD
= 5V
MAX8520, R
EXT
= 60kΩ, V
DD
= 3V
MAX8520, R
EXT
= 150kΩ, V
DD
= 5V
MAX8520, R
EXT
= 150kΩ, V
DD
= 3V
MHz
External Sync Frequency Range
LX_ Duty Cycle
OS1, OS2, CS Input Current
SHDN,
FREQ Input Current
SHDN,
FREQ Input Low Voltage
SHDN,
FREQ Input High Voltage
I
OS1
, I
OS2
,
I
CS
I
SHDN
,
I
FREQ
V
IL
V
IH
25% < duty cycle < 75% (MAX8521 only)
(Note 6)
0V or V
DD
0V or V
DD
, FREQ applicable for the
MAX8521 only
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
MAXV
= V
REF
x 0.67, V
OS1
to V
OS2
=
±4V,
V
DD
= 5V
V
MAXV
= V
REF
x 0.33, V
OS1
to V
OS2
=
±2V,
V
DD
= 3V
I
MAXV-BIAS
,
I
MAXI_-BIAS
A
CTLI
R
CTLI
g
m
V
OS1
to V
CS
=
±100mV
V
OS1
= V
DD
/2
V
MAXV
= V
MAXI_
= 0.1V or 1.5V
V
CTLI
= 0.5V to 2.5V (Note 7)
1MΩ terminated at REF
MHz
%
µA
µA
V
V
V
DD
x
0.75
-2
-3
+2
+3
%
%
MAXV Threshold Accuracy
MAXV, MAXI_ Input Bias Current
CTLI Gain
CTLI Input Resistance
Error-Amp Transconductance
V
ITEC
Accuracy
-0.1
9.5
0.5
50
-10
10.0
1.0
100
+0.1
10.5
2.0
160
+10
µA
V/V
MΩ
µS
%
_______________________________________________________________________________________
3
Smallest TEC Power Drivers for Optical
Modules
MAX8520/MAX8521
ELECTRICAL CHARACTERISTICS
(V
DD
= V
PVDD1
= V
PVDD2
= V
SHDN
= 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T
A
= -40°C to +85°C,
unless otherwise noted.) (Note 8)
PARAMETER
Input Supply Range
Maximum TEC Current
Reference Voltage
Reference Load Regulation
V
REF
∆V
REF
V
DD
= 3V to 5.5V, I
REF
= 150µA
V
DD
= 3V to 5V, I
REF
= 10µA to 1mA
V
DD
= 5V
V
DD
= 3V
nFET On-Resistance
pFET On-Resistance
R
DS(ON-N)
R
DS(ON-P)
V
DD
= 5V, I = 0.2A
V
DD
= 3V, I = 0.2A
V
DD
= 5V, I = 0.2A
V
DD
= 3V, I = 0.2A
V
COMP
= V
REF
=
1.500V, V
DD
= 5V
V
COMP
= V
REF
=
1.500V, V
DD
= 3.3V
V
DD
Rising
V
DD
Falling
MAX8521, FREQ = V
DD
, V
DD
= 3V to 5V
MAX8521, FREQ = GND, V
DD
= 3V to 5V
Internal Oscillator Switching
Frequency
f
SW-INT
MAX8520, R
EXT
= 60kΩ, V
DD
= 5V
MAX8520, R
EXT
= 60kΩ, V
DD
= 3V
MAX8520, R
EXT
= 150kΩ, V
DD
= 5V
MAX8520, R
EXT
= 150kΩ, V
DD
= 3V
External Sync Frequency Range
LX_ Duty Cycle
OS1, OS2, CS Input Current
SHDN,
FREQ Input Current
SHDN,
FREQ Input Low Voltage
SHDN,
FREQ Input High Voltage
25% < duty cycle < 75% (MAX8521 only)
Note 6
I
OS1
, I
OS2
,
0V or V
DD
I
CS
I
SHDN
,
I
FREQ
V
IL
V
IH
0V or V
DD
, FREQ applicable for the
MAX8521 only
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
DD
= 3V to 5.5V, FREQ applicable for the
MAX8521 only
V
DD
x
0.75
500kHz mode
1MHz mode
V
MAXI_
= V
REF
V
MAXI_
= V
REF
/3
V
MAXI_
= V
REF
V
MAXI_
= V
REF
/3
140
40
143
45
SYMBOL
V
DD
CONDITIONS
MIN
3.0
±1.5
1.480
1.515
5
160
60
155
55
0.14
0.16
0.23
0.30
14
21
11
14
3
2.50
2.40
0.8
0.4
0.8
0.76
0.4
0.36
0.7
0
-100
-5
2.80
2.70
1.2
0.6
1.2
1.10
0.6
0.56
1.2
100
+100
+5
V
DD
x
0.25
MHz
%
µA
µA
V
V
MHz
mV
MAX
5.5
UNITS
V
A
V
mV
MAXIP/MAXIN Threshold
Accuracy
No Load Supply Current
I
DD(NO
LOAD)
Shutdown Supply Current
UVLO Threshold
I
DD-SD
V
UVLO
500kHz mode
1MHz mode
SHDN
= GND, V
DD
= 5V (Note 5)
mA
mA
V
4
_______________________________________________________________________________________
Smallest TEC Power Drivers for Optical
Modules
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
PVDD1
= V
PVDD2
= V
SHDN
= 5V, 1MHz mode (Note 4). PGND1 = PGND2 = GND, CTLI = MAXV = MAXIP = MAXIN = REF,
T
A
= -40°C to +85°C,
unless otherwise noted.) (Note 8)
PARAMETER
SYMBOL
CONDITIONS
V
MAXV
= V
REF
x 0.67, V
OS1
to V
OS2
=
±4V,
V
DD
= 5V
V
MAXV
= V
REF
x 0.33, V
OS1
to V
OS2
=
±2V,
V
DD
= 3V
I
MAXV-
BIAS
,
I
MAXI_-BIAS
CTLI Gain
CTLI Input Resistance
Error-Amp Transconductance
V
ITEC
Accuracy
A
CTLI
R
CTLI
g
m
V
OS1
to V
CS
=
±100mV
V
OS1
= V
DD
/2
V
CTLI
= 0.5V to 2.5V (Note 7)
1MΩ terminated at REF
9.5
0.5
50
-10
10.5
2.0
160
+10
V/V
MΩ
µS
%
V
MAXV
= V
MAXI_
= 0.1V or 1.5V
MIN
-2
-3
MAX
+2
+3
UNITS
%
%
MAX8520/MAX8521
MAXV Threshold Accuracy
MAXV, MAXI_ Input Bias Current
-0.1
+0.1
µA
Note 4:
Enter 1MHz mode by connecting a 60kΩ resistor from FREQ to ground for the MAX8520, and connecting FREQ to V
DD
for
the MAX8521.
Note 5:
Includes power FET leakage.
Note 6:
Duty-cycle specification is guaranteed by design and not production tested.
Note 7:
CTLI Gain is defined as:
A
CTLI
=
V
CTLI
(
V
OS1
V
CS
)
Note 8:
Specifications to -40°C are guaranteed by design and not production tested.
Typical Operating Characteristics
(V
DD
= 5V, circuit of Figure 1, T
A
= +25°C unless otherwise noted.)
EFFICIENCY vs. TEC CURRENT
V
DD
= 5V, R
TEC
= 2Ω
MAX8520/21 toc01
EFFICIENCY vs. TEC CURRENT
V
DD
= 3.3V, R
TEC
= 1.3Ω
80
70
EFFICIENCY (%)
60
50
40
30
20
10
0
FREQ = 500kHz
FREQ = 1MHz
MAX8520/21 toc02
COMMON-MODE
OUTPUT VOLTAGE RIPPLE
MAX8520/21 toc03
90
80
70
FREQ = 1MHz
EFFICIENCY (%)
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
FREQ = 500kHz
90
C
2
= C
7
= 1µF
V
OS2
20mV/div
AC-COUPLED
V
OS1
20mV/div
AC-COUPLED
I
TEC
= 1A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
400ns/div
1.6
TEC CURENT (A)
TEC CURRENT (A)
_______________________________________________________________________________________
5
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参数对比
与MAX8520ETP相近的元器件有:MAX8521ETP、MAX8521ETP-T。描述及对比如下:
型号 MAX8520ETP MAX8521ETP MAX8521ETP-T
描述 Power Management Specialized - PMIC Power Management Specialized - PMIC Power Management Specialized - PMIC
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
厂商名称 Maxim(美信半导体) Maxim(美信半导体) Maxim(美信半导体)
零件包装代码 QFN QFN QFN
包装说明 HVQCCN, HVQCCN, HVQCCN,
针数 20 20 20
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
接口集成电路类型 INTERFACE CIRCUIT INTERFACE CIRCUIT INTERFACE CIRCUIT
JESD-30 代码 S-XQCC-N20 S-XQCC-N20 S-XQCC-N20
JESD-609代码 e0 e0 e0
长度 5 mm 5 mm 5 mm
湿度敏感等级 1 1 1
功能数量 1 1 1
端子数量 20 20 20
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN HVQCCN
封装形状 SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 245 245 245
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 0.8 mm 0.8 mm 0.8 mm
最大供电电压 5.5 V 5.5 V 5.5 V
最小供电电压 3 V 3 V 3 V
标称供电电压 5 V 5 V 5 V
表面贴装 YES YES YES
技术 BICMOS BICMOS BICMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 5 mm 5 mm 5 mm
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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