Zener Diodes
MA111
MAZF000
Silicon planer type
Surge absorption circuit
s
Features
q
q
Series
Unit : mm
Cathode
Anode
0.625
S-Mini type package (2-pin)
No rank classification (V
Z
= 3.3 to 12V)
0.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
2
0.16
–0.06
+0.1
1
s
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Symbol
I
F(AV)
Average forward current
Total power dissipation
Junction temperature
Storage temperature
Instanious forward current
I
FRM
P
tot
*
T
stg
T
j
* With a printed-circuit board
1
s
Common Electrical Characteristics
(Ta= 25˚C)*
Parameter
Symbol
V
F
R
Z
I
R
C
t
V
Z
*
2
Forward voltage
Zener voltage
is
Operating resistance
Reverse current
Terminal capacitance
M
ai
Note 1. Test method : Depend on JIS C7031 testing
2. Rated input/output frequency : 5MHz
3. *
1
: The V
Z
value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
*
2
: Guaranteeed at 20ms after power application
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
0.4±0.1
1.7±0.1
2.5±0.2
0.4±0.1
1.25±0.1
0.3
Rating
100
200
150
150
Unit
mA
mA
˚C
˚C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
mW
– 55 to +150
ue
Condition
min
typ
max
1.0
Unit
V
V
nt
in
I
F
= 15mA
0.9
co
I
Z
.............. Specified value
I
Z
.............. Specified value
............. Specified value
V
R
Refer to the electrical characteristics
list of P483
Ω
/D
µA
ce
............. Specified value
V
R
pF
nt
en
an
0.7±0.1
Zener Diodes
s
Electrical Characteristics
(Ta= 25˚C)
Zener voltage
Part Number
min
(V)
3.10
3.40
3.70
4.00
4.40
4.80
5.30
5.80
6.40
7.00
7.70
8.50
9.40
10.40
11.40
nom
(V)
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
V
Z
max
(V)
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.60
11.60
12.70
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
max
(µA)
20
10
10
10
2.0
1.0
0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.05
Reverse current
I
R
V
R
(V)
1.0
1.0
1.0
1.0
1.0
2.0
2.5
4.0
4.0
5.0
5.0
6.0
7.0
8.0
9.0
Operating resis-
tance
R
Z
max
I
Z
(Ω)
(mA)
130
5
130
5
130
5
130
5
80
5
60
5
40
5
30
5
20
5
20
5
20
5
20
5
30
5
30
5
30
5
MAZF000
Series
Terminal capaci-
tance
C
t
(pF)
(V
R
= 0V)
f=1MHz
typ
Marking
MAZF033
MAZF036
MAZF039
MAZF043
MAZF047
MAZF051
MAZF056
MAZF062
MAZF068
MAZF075
MAZF082
MAZF091
MAZF100
MAZF110
MAZF120
325
300
300
275
130
110
95
90
85
80
75
70
70
65
65
B1
B2
B3
C1
C2
D1
D2
E1
E2
F
G
H
10
11
12
P
tot
– Ta
With a printed
-circuit board
300
0.8mm
0.8mm
Cu foil
t=0.035 mm
P
tot
(mW)
Power dissipation
250
200
150
100
50
0
0
50
100
150
200
Ta
250
(˚C)
300
Ambient temperature
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
–
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–
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