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MBD54DWT1D

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
端子数量
6
元件数量
2
加工封装描述
HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 419B-02, SC-88, 6 PIN
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
MATTE TIN
端子位置
DUAL
包装材料
PLASTIC/EPOXY
工艺
SCHOTTKY
结构
SEPARATE, 2 ELEMENTS
二极管元件材料
SILICON
最大功耗极限
0.1500 W
二极管类型
SIGNAL DIODE
反向恢复时间最大
0.0050 us
最大重复峰值反向电压
30 V
最大平均正向电流
0.2000 A
文档预览
MBD54DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage
0.35 V @ I
F
= 10 mAdc
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Anode 1
6 Cathode
5 N/C
4 Anode
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
Value
30
150
1.2
200 Max
125 Max
−55
to +150
Unit
V
mW
mW/°C
mA
°C
°C
1
N/C 2
Cathode 3
I
F
T
J
T
stg
MARKING
DIAGRAM
6
SOT−363
CASE 419B
STYLE 6
1
M
G
= Date Code
= Pb−Free Package
BL MG
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBD54DWT1G
Package
SOT−363
(Pb−Free)
Shipping
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2009
October, 2009
Rev. 7
1
Publication Order Number:
MBD54DWT1/D
MBD54DWT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
mA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
(Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
V
pF
mAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
820
W
+10 V
2k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MBD54DWT1G
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
1000
T
A
= 150°C
100
T
A
= 125°C
10
1.0
T
A
= 85°C
0.1
0.01
T
A
= 25°C
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0
5
V
F
, FORWARD VOLTAGE (VOLTS)
10
15
20
V
R
, REVERSE VOLTAGE (VOLTS)
25
30
10
1 50°C
1 25°C
1.0
85°C
25°C
- 40°C
- 55°C
0.1
0.0
Figure 2. Forward Voltage
14
C T , TOTAL CAPACITANCE (pF)
12
10
8
6
4
2
0
0
5
10
15
20
Figure 3. Leakage Current
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
http://onsemi.com
3
MBD54DWT1G
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
4
DIM
A
A1
A3
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
D
6
5
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
E
M
A3
C
A
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MBD54DWT1/D
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参数对比
与MBD54DWT1D相近的元器件有:NSVMBD54DWT1G、MBD54DWT1G。描述及对比如下:
型号 MBD54DWT1D NSVMBD54DWT1G MBD54DWT1G
描述 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE DIODE SCHOTTKY DUAL 30V SOT363 直流反向耐压(Vr):30V 平均整流电流(Io):200mA 正向压降(Vf):1V @ 100mA
端子数量 6 6 6
元件数量 2 2 2
表面贴装 Yes YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
二极管元件材料 SILICON SILICON SILICON
二极管类型 SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE
最大重复峰值反向电压 30 V 30 V 30 V
Brand Name - ON Semiconductor ON Semiconductor
是否无铅 - 不含铅 不含铅
厂商名称 - ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 - SC-88, SOT-363, 6 PIN R-PDSO-G6
制造商包装代码 - 419B-02 419B-02
Reach Compliance Code - compliant compliant
Factory Lead Time - 8 weeks 1 week
应用 - FAST RECOVERY FAST RECOVERY
最小击穿电压 - 30 V 30 V
配置 - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最大正向电压 (VF) - 1 V 1 V
JESD-30 代码 - R-PDSO-G6 R-PDSO-G6
JESD-609代码 - e3 e3
湿度敏感等级 - 1 1
最大非重复峰值正向电流 - 0.6 A 0.6 A
相数 - 1 1
最高工作温度 - 125 °C 125 °C
最大输出电流 - 0.2 A 0.2 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
最大功率耗散 - 0.15 W 0.15 W
最大反向电流 - 2 µA 2 µA
最大反向恢复时间 - 0.005 µs 0.005 µs
反向测试电压 - 25 V 25 V
技术 - SCHOTTKY SCHOTTKY
端子面层 - Tin (Sn) Tin (Sn)
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