MBR1025
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
MBR1025passivated Silicon Chip
Dimension(mil): 108x128 mil
Thickness:
350 +- 20
µm
Metallization:
Top ( Anode ) :
Al (AlAg)*
Bottom ( Cathode) : TiNiAg
Forward Current (A):
Reverse Voltage (V):
Type
MBR1025
10A
>27V
Chip
size(mil)
VF(V)@25 C
at If =10A
VF(V)@25 C
at If =20A
I
RM
@V
RMM
at 25 C
108x128
<0,4V
<0,5V
0,6mA
* Avaible in both variants
expected value for recommended assembling with both side soldering
Typical device : PBYL1025, 19TQ015
