LITE-ON
SEMICONDUCTOR
MBR1030CT thru 1060CT
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 10
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
3
TO-220AB
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
9.28
8.26
E
F
G
H
F
G
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
1030CT
30
21
30
CHARACTERISTICS
R
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent
at T
C
=105 C (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage, (Note 1)
P
N
I
M
I
L
E
SYMBOL
A
10
125
10000
PIN 2
CASE
R
2.29
2.79
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
Y
-
12.70
6.35
14.73
V
RRM
V
RMS
V
DC
I
(AV)
MBR
1035CT
35
24.5
35
MBR
1040CT
40
28
40
MBR
1045CT
45
31.5
45
MBR
1050CT
50
35
50
MBR
1060CT
60
42
60
UNIT
V
V
V
A
I
FSM
A
V/us
dv/dt
V
F
0.57
0.70
0.84
@I
F
=5A T
J
=125 C
@I
F
=5A T
J
=25 C
@I
F
=10A T
J
=125 C
@T
J
=25 C
@T
J
=125 C
0.65
0.80
0.90
0.1
15
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance,
per element (Note 2)
I
R
C
J
R
0JC
mA
170
3.0
-55 to +150
-55 to +175
220
pF
C/W
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
C
C
REV. 2-PRE, 13-Sep-2001, KTHC12
RATING AND CHARACTERISTIC CURVES
MBR1030CT thru MBR1060CT
AVERAGE FORWARD CURRENT
AMPERES
16
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
12
8
4
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
T
J
= 125 C
MBR1030CT ~ MBR1045CT
10
N
1.0
0.1
0.1
0.2
0.3
MBR1030CT ~ MBR1045CT
1.0
0.1
0.01
T
J
= 25 C
0.001
0
20
40
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
CAPACITANCE , (pF)
L
E
R
P
60
80
100
120
1000
100
T
J
= 25 C, f= 1MHz
I
M
A
0.4
R
0.6
Y
0.7
0.8
MBR1050CT ~ MBR1060CT
I
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
140
0.5
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
MBR1050CT ~ MBR1060CT
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 2-PRE, 13-Sep-2001, KTHC12
电子工程世界
