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MBR1545CT

15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
15 A, 45 V, 硅, 整流二极管, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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器件:MBR1545CT

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器件参数
参数名称
属性值
端子数量
3
元件数量
2
加工封装描述
ROHS COMPLIANT, PLASTIC PACKAGE-3
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
FLANGE MOUNT
端子形式
THROUGH-HOLE
端子涂层
TIN
端子位置
SINGLE
包装材料
PLASTIC/EPOXY
工艺
SCHOTTKY
结构
COMMON CATHODE, 2 ELEMENTS
壳体连接
CATHODE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
应用
EFFICIENCY
相数
1
最大重复峰值反向电压
45 V
最大平均正向电流
15 A
最大非重复峰值正向电流
150 A
文档预览
BL
FEATURES
GALAXY ELECTRICAL
MBR1530CT - - - MBR15100CT
VOLTAGE RANGE: 30 -
100
V
CURRENT: 15 A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.08ounce, 2.24 grams
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
MBR
MBR MBR MBR MBR MBR MBR
UNITS
1530CT
1535CT 1540CT 1545CT 1550CT 1560CT 1580CT 15100CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 105°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forward
voltage
(Note 1)
(I
F
=7.5A,T
C
=25
(I
F
=7.5A,T
C
=125
(I
F
=15A ,T
C
=25
(I
F
=15A,T
C
=125
Maximum reverse current
at rated DC blocking voltage
)
)
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
35
25
35
40
28
40
45
32
45
15
150
50
35
50
60
42
60
80
56
80
100
70
100
V
V
V
A
A
-
0.75
0.65
-
-
1.0
50
3.0
-
55
---- + 150
-
55
---- + 150
0.80
-
-
-
0.1
6.0
3)
mA
/W
V
V
F
0.57
0.84
0.72
0.1
15
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T
C
=100
www.galaxycn.com
Document Number 0267036
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
MBR1530CT---MBR15100CT
FIG.2 -- FORWARD DERATING CURVE
150
15
120
AMPERES
8.3ms Single Half Sine Wave
T
J
=125
12
90
9
60
6
30
3
0
1
0
25
50
75
100
125
150
10
100
NUMBER OF CYCLES AT 60H
Z
CASE
TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
MBR1550CT-MBR1560CT
MBR1530CT-MBR1545CT
2
0
0
1
0
0
MBR1530CT-MBR1545CT
MBR1580CT-MBR15100CT
AMPERES
1
MBR1580CT-MBR15100CT,T
C
=100℃
10
MBR1550CT-MBR1560CT
.1
MBR1550CT-MBR1560CT
P u ls e w id t h = 3 0 0
1 % D u t y C y c le
s
MBR1530CT-MBR1545CT,MBR1580CT-MBR15100CT
1
.
2
.
4
.
6
.
8
1.0
1 .
2
1 .
4
1 .
6
1 .
8
2.0
2.2
.01
T
C
=125℃
T
C
=25℃
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
,%
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0267036
BL
GALAXY ELECTRICAL
2.
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参数对比
与MBR1545CT相近的元器件有:MBR1535CT、MBR1530CT、MBR1540CT、MBR15100CT、MBR1550CT、MBR1560CT、MBR1580CT。描述及对比如下:
型号 MBR1545CT MBR1535CT MBR1530CT MBR1540CT MBR15100CT MBR1550CT MBR1560CT MBR1580CT
描述 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
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