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MBR1660

16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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BL
FEATURES
GALAXY ELECTRICAL
MBR1635 - - - MBR1660
VOLTAGE RANGE: 35 --- 60 V
CURRENT: 16.0 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,Low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
TO-220AC
MECHANICAL DATA
Case:JEDEC TO-220AC,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight:
0.064 ounce, 1.81 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MBR1635
MBR1640 MBR1645
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=133
Peak repetitive forw ard current at T
C
=125
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous
forward voltage at (Note 1)
Maximum reverse current
at rated DC blocking voltage
Typical thermal resistance
@T
J
=125
I
F
=16A,T
C
=25℃
I
F
=16A,T
C
=125℃
@T
A
=25
@T
A
=125
(Note2)
MBR1650
50
35
50
MBR1660
UNITS
60
42
60
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
FSM
35
25
35
40
28
40
45
32
45
16.0
32.0
150
0.63
0.57
0.2
40.0
1.5
-65 --- +125
-65 --- +150
0.75
0.65
1.0
50.0
A
V
F
I
R
R
θ
JC
T
J
T
STG
V
mA
℃/W
www.galaxycn.com
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
μ
s pulse width,1% duty cy cle.
2.Thermal resistance junction to case
Document Number 0266017
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
MBR1635 - - - MBR1660
FIG.2 --MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
150
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
20
Resistive or Inductive Load
125
16
12
8
4
0
0
50
100
150
100
75
50
25
0
1
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MILLIAMPERES
FIG.3 --TYPICAL INSTANTANEOUS
INSTANTANEOUS FORWARD CURRENT
FORWARD CHARACTERISTICS
50
50
10
MBR1635-MBR1645
MBR1650-MBR1660
10
T
J
=125
Pulse width=300
μ
s
1% Duty Cycle
TJ=125
1
AMPERES
T
J
=25
1
TJ=75
0.1
0.1
0.01
TJ=25
MBR1635-MBR1645
MBR1650-MBR1660
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
TRANSIENT THERMAL IMPEDANCE ,
/W
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
4,000
TJ=25
f=1.0MHz
Vsig=50mVp-p
1,000
10
1
MBR1635-MBR1645
100
MBR1650-MBR1660
0.1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,Sec
www.galaxycn.com
Document Number 0266017
BL
GALAXY ELECTRICAL
2.
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参数对比
与MBR1660相近的元器件有:MBR1635、MBR1645、MBR1650、MBR1640。描述及对比如下:
型号 MBR1660 MBR1635 MBR1645 MBR1650 MBR1640
描述 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 50 V, SILICON, RECTIFIER DIODE 16 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC
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