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MBR200100

180 A, 100 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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MBR20020
THRU
MBR200100
200
Amp
Schottky Barrier
Rectifier
20
to 100 Volts
HALF PACK
D
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
G
MCC
Part Number
MBR20020
MBR20030
MBR20035
MBR20040
MBR20045
MBR20060
MBR20080
MBR200100
Maximum
RMS Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
J
B
K
E
F
H
C
A
L
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR20020-20045
MBR20060
MBR20080-200100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
200
A
3000A
T
L
=
140°C
8.3ms, half sine
I
FM
=
200.0A;
T
A
= 25°C
DIM
A
B
C
D
E
F
G
H
J
K
L
DIMENSIONS
INCH
ES
MIN
1.520
.725
.605
1.182
.745
.152
1/4 - 20
.570
.15
.495
.120
MM
MIN
MAX
38.86
39.62
18.42
19.69
15.37
15.88
30.02
30.28
18.92
18.18
3.86
4.06
UNC - 2B
14.49
14.73
3.96
4.06
12.57
12.83
3.05
3.30
V
F
.63 V
.75 V
.84 V
I
R
5
mA
T
A
= 25°C
MAX
1.560
.775
.625
1.192
.755
.160
.580
.160
.505
.130
NOTE
C
J
300pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com
MBR20020
thru
MBR200100
Figure 1
Typical Forward Characteristics
200
100
60
40
160
20
25°C
Amps 10
6
4
2
1
.6
.4
.2
.1
0.6
0.8
1.0
1.4
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.8
2.0
0
40
Amps
60
120
200
MCC
Figure 2
Forward Derating Curve
80
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
70
90
°C
110
130
150
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
Figure 3
Junction Capacitance
1000
600
400
200
pF
T
J
=25°C
100
60
40
20
10
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
Junction Capacitance - pF
versus
Reverse Voltage - Volts
www.mccsemi.com
MBR20020
thru
MBR200100
Figure 4
Typical Reverse Characteristics
1000
600
400
2600
200
100
60
40
20
mAmps 5.0
4.0
3.0
2.0
1.0
.6
.4
.2
.1
10
20
T
A
=25°C
40
60
Volts
Instantaneous Reverse Leakage Current - MicroAmperes
versus
Percent Of Rated Peak Reverse Voltage - Volts
80
100
120
T
A
=125°C
0
1
2
4
2200
1800
Amps
1000
500
MCC
Figure
5
Peak Forward Surge Current
3000
6
8 10 20
Cycles
40
60 80 100
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
www.mccsemi.com
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参数对比
与MBR200100相近的元器件有:MBR20080、MBR20045、MBR20060、MBR20040、MBR20030、MBR20035、MBR20020。描述及对比如下:
型号 MBR200100 MBR20080 MBR20045 MBR20060 MBR20040 MBR20030 MBR20035 MBR20020
描述 180 A, 100 V, SILICON, RECTIFIER DIODE 180 A, 80 V, SILICON, RECTIFIER DIODE 180 A, 45 V, SILICON, RECTIFIER DIODE 180 A, 80 V, SILICON, RECTIFIER DIODE 180 A, 40 V, SILICON, RECTIFIER DIODE 180 A, 80 V, SILICON, RECTIFIER DIODE 180 A, 35 V, SILICON, RECTIFIER DIODE 180 A, 80 V, SILICON, RECTIFIER DIODE
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