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MBR2060CT

20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
20 A, 60 V, 硅, 整流二极管, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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器件:MBR2060CT

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器件参数
参数名称
属性值
端子数量
3
元件数量
2
加工封装描述
塑料 PACKAGE-3
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
矩形的
包装尺寸
凸缘安装
端子形式
THROUGH-孔
端子涂层
端子位置
单一的
包装材料
塑料/环氧树脂
工艺
SCHOTTKY
结构
COMMON CATHODE, 2 ELEMENTS
壳体连接
CATHODE
二极管元件材料
二极管类型
整流二极管
应用
GENERAL PURPOSE
相数
1
最大重复峰值反向电压
60 V
最大平均正向电流
20 A
最大非重复峰值正向电流
150 A
文档预览
BL
FEATURES
GALAXY ELECTRICAL
MBR2030CT - - - MBR2060CT
VOLTAGE RANGE: 30 -
60
V
CURRENT:
20
A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Cas e:JEDEC
TO-220AB,m
olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.08ounce, 2.24 grams
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
2030CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 135°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=10A,T
C
=25
(I
F
=10A,T
C
=125
(I
F
=20A,T
C
=25
(I
F
=20A,T
C
=125
Maximum reverse current
at rated DC blocking voltage
)
)
)
)
MBR
2035CT
35
25
35
MBR
2040CT
40
28
40
20
150
MBR
2045CT
45
32
45
MBR
2050CT
50
35
50
MBR
2060CT
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
V
F
-
0.57
0.84
0.72
0.1
15
0.80
0.70
0.95
0.85
0.15
V
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
mA
150
2.0
-
55
---- + 150
-
55
---- + 150
www.galaxycn.com
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
/W
Document Number 0267037
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
MBR2030CT - - - MBR2060CT
FIG.2 -- FORWARD DERATING CURVE
150
20
120
16
8.3ms Single Half Sine Wave
T
J
=125
12
90
8
60
4
30
0
0
30
60
90
120
150
0
1
10
100
NUMBER OF CYCLES AT 60H
Z
CASE
TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
MBR2050CT-MBR2060CT
Tc=100℃
MBR2030CT- MBR2045CT
2
0
0
1
0
0
MBR2030CT-MBR2045CT
1.0
10
MBR2050CT-MBR2060CT
0.1
MBR2050CT-MBR2060CT
T
C
=25℃
T
J
=25
Pulse width=300 S
1% Duty Cycle
MBR2030CT -MBR2045CT
1
.
2
.
4
.
6
.
8
1.0
1 .
2
1 .
4
1 .
6
1 .
8
2.0
2.2
.01
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
www.galaxycn.com
Document Number 0267037
BL
GALAXY ELECTRICAL
2.
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参数对比
与MBR2060CT相近的元器件有:MBR2050CT。描述及对比如下:
型号 MBR2060CT MBR2050CT
描述 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
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