CYStech Electronics Corp.
30Amp. Schottky Barrier Rectifiers
Spec. No. : C478E3
Issued Date : 2009.12.29
Revised Date :
Page No. : 1/4
MBR30150E3
Features
I
F(AV)
V
RRM
Tj
V
F(MAX)
2
×
15A
150V
175°C
0.75V
•
175℃ operating junction temperature
•
Low V
F
and low I
R
type
•
Metal silicon junction, major carrier conduction
•
30A total (15A per diode leg)
•
Guardring for over voltage protection
•
Low power loss, high efficiency
•
High surge capability
•
High temperature soldering guaranteed : 260℃/10s, 0.25”(6.35mm) from case
•
For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
•
RoHS compliant package
Mechanical Data
•
Case: JEDEC TO-220AB molded plastic
•
Mounting Position: Any
•
Weight: 0.08 ounce, 2.24 grams
•
Terminals: Pure tin plated, lead-free, solderable per MIL-STD-750 method 2026
•
Epoxy: UL 94V-0 rate flame retardant
•
Mounting Torque : 5 in-lbs max
Equivalent Circuit
MBR30150E3
Outline
TO-220AB
AKA
MBR30150E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C478E3
Issued Date : 2009.12.29
Revised Date :
Page No. : 2/4
Maximum Ratings and Electrical Characteristics (Per Diode Leg)
(
Rating at 25°C ambient temperature unless otherwise specified.
resistive or inductive load.
Single phase, half wave, 60Hz,
For capacitive load, derate current by 20%.)
Symbol
V
RRM
V
RMS
V
DC
V
F
Min.
Typ.
Max.
150
105
150
0.92
0.75
1
0.86
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
I
F
=15A, T
C
=25℃
Maximum instantaneous
I
F
=15A, T
C
=125℃
forward voltage at
I
F
=30 A, T
C
=25℃
I
F
=30A, T
C
=125℃
Maximum Average forward rectified
Per Diode
current @ T
C
=130℃
Per Device
(Note 1)
Units
V
V
V
V
I
F(AV)
I
FSM
I
RRM
I
R
dV/dt
C
J
T
stg
T
J
-65
-65
230
15
30
180
4
5
10
10,000
8000
+175
+175
A
A
A
μA
mA
V/μs
pF
V
℃
℃
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
rated load (JEDEC method)
Peak repetitive reverse surge current
, TJ<175℃ (Note 1 )
V
R
=150 V, T
C
=25℃
Maximum instantaneous
reverse current at
V
R
=150 V, T
C
=125℃
Voltage rate of change, (rated V
R
)
Typical junction capacitance @ f=1MHz and applied
5V reverse voltage
ESD susceptibility
(Note 2)
Storage temperature range
Operating junction temperature range
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case
Maximum Thermal Resistance, Junction-to-ambient
Symbol
R
th,j-c
R
th,j-a
Value
1.7
45
Unit
°C/W
°C/W
Ordering Information
Device
MBR30150E3
Package
TO-220AB
(RoHS compliant package)
Shipping
50 pcs / Tube, 40 Tubes/Box
MBR30150E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Forward Current Derating Curve
16
Average Forward Current---Io(A)
14
12
10
8
6
4
2
0
0
25
50
75 100 125 150
Case Temperature---T
C
(℃)
175
200
1
0
0.2
0.4
0.6
Spec. No. : C478E3
Issued Date : 2009.12.29
Revised Date :
Page No. : 3/4
Forward Current vs Forward Voltage
100000
Instantaneous Forward Current---IF(mA)
Per leg
10000
Tj=150℃
1000
100
Tj=25℃
resistive or inductive load
per leg
10
Pulse width=300μs,
1% Duty cycle
0.8
1
1.2
1.4
Forward Voltage---V
F
(V)
Junction Capacitance vs Reverse Voltage
1000
Reverse Leakage Current vs Reverse Voltage
1000
Reverse Leakage Current---I
R
(μA)
Per leg
Junction Capacitance---C
J
(pF)
100
Tj=125℃
10
1
0.1
0.01
0.001
Tj=25℃
Tj=75℃
100
Tj=25℃, f=1.0MHz
Per Leg
10
0.1
1
10
100
0
20
40
Reverse Voltage---V
R
(V)
60
80 100 120
Reverse Voltage---V
R
(V)
140
160
MBR30150E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
A
D
B
E
C
Device
Name
Spec. No. : C478E3
Issued Date : 2009.12.29
Revised Date :
Page No. : 4/4
CYS
30150
H
I
G
4
P
M
3
2
1
N
K
□□
Date Code
O
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Style: Pin
1.Anode 2.Cathode 3.Anode
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*
0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*
16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*
0.1508
0.0295 0.0374
0.0449 0.0551
-
*
0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
-
*
3.83
0.75
0.95
1.14
1.40
-
*
2.54
12.70
14.27
14.48
15.87
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: KFC ; tin plated
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MBR30150E3
CYStek Product Specification
