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MBR3050CT

Rectifier Diode,

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

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器件:MBR3050CT

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器件参数
参数名称
属性值
厂商名称
Galaxy Semi-Conductor Co Ltd
Reach Compliance Code
unknow
ECCN代码
EAR99
文档预览
BL
FEATURES
GALAXY ELECTRICAL
MBR3030CT - - - MBR30100CT
VOLTAGE RANGE: 30 -
100
V
CURRENT:
30
A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.08ounce, 2.24 grams
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
MBR
MBR MBR MBR MBR MBR MBR
UNITS
3030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT 30100CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 105°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forward
voltage
(Note 1)
(I
F
=15A,T
C
=25
(I
F
=15A,T
C
=125
(I
F
=30A,T
C
=25
)
(I
F
=30A ,T
C
=125 )
@T
C
=25
@T
C
=125
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
35
25
35
40
28
40
45
32
45
30
50
35
50
60
42
60
80
56
80
100
70
100
V
V
V
A
A
200
-
0.80
0.85
V
F
0.57
0.84
0.72
0.70
0.95
0.85
1.0
60
6.8
-
55
---- + 150
-
55
---- + 150
0.65
0.95
0.75
0.2
V
Maximum reverse current
at rated DC blocking voltage
I
R
R
θJC
T
J
T
STG
mA
40
4.4
/W
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
www.galaxycn.com
Document Number 0267040
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
MBR3030CT- - - MBR30100CT
FIG.2 -- FORWARD DERATING CURVE
200
30
160
AMPERES
8.3ms Single Half Sine Wave
T
J
=125
24
120
18
80
12
40
6.0
0
1
0
25
50
75
100
125
150
10
100
NUMBER OF CYCLES AT 60H
Z
CASE
TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT,
100 T
J
=125
Pulse width = 300
µ
s
1% Duty Cycle
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
500
10
MBR3030CT-MBR3060CT
T
J
=25
AMPERES
10
1
MBR3080CT-MBR30100CT
.1
MBR3030CT-MBR3060CT
1
MBR3030CT-MBR3045CT
MBR3050CT-MBR3060CT
MBR3080CT-MBR30100CT
MBR3080CT-MBR30100CT
.01
T
C
=125℃
T
C
=25℃
0
20
40
60
80
100
120
140
.1
.3
.4
.5 .6
.7
.8
.9 1.0 1.1 1.2 1.3 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
,%
www.galaxycn.com
Document Number 0267040
BL
GALAXY ELECTRICAL
2.
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参数对比
与MBR3050CT相近的元器件有:MBR3080CT。描述及对比如下:
型号 MBR3050CT MBR3080CT
描述 Rectifier Diode, Rectifier Diode,
厂商名称 Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd
Reach Compliance Code unknow unknown
ECCN代码 EAR99 EAR99
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