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MBR3100RLG

直流反向耐压(Vr):100V 平均整流电流(Io):3A 正向压降(Vf):790mV @ 3A

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
DO-201AD
包装说明
LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
针数
2
制造商包装代码
267-05
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Is Samacsys
N
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.69 V
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
NO
技术
SCHOTTKY
端子面层
Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
http://onsemi.com
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
High Surge Capacity
Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES, 100 VOLTS
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current T
A
= 100°C
(R
qJA
= 28°C/W, Refer to P.C. Board Mounting,
Note 3)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating and Storage Junction Temperature
Range (Note 1) (Reverse Voltage Applied)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
O
Max
100
Unit
V
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
A
MBR
3100
YYWWG
G
A
= Assembly Location
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
3.0
A
I
FSM
150
A
ORDERING INFORMATION
Device
Package
Axial Lead
Axial Lead
(Pb−Free)
Axial Lead
Axial Lead
(Pb−Free)
Shipping
500 Units / Bag
500 Units / Bag
1500/Tape & Reel
1500/Tape & Reel
T
J
, T
stg
dv/dt
−65 to
+175
10
°C
V/ns
MBR3100
MBR3100G
MBR3100RL
MBR3100RLG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2006 − Rev. 6
Publication Order Number:
MBR3100/D
MBR3100
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)
Symbol
R
qJA
Max
28
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 Amps, T
L
= 25°C)
(i
F
= 3.0 Amps, T
L
= 100°C)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
T
L
= 25°C
T
L
= 100°C
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
Symbol
v
F
0.79
0.69
i
R
0.6
20
mA
Max
Unit
V
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I , REVERSE CURRENT (mA)
R
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
1
0.5
T
J
= 150°C
100°C
25°C
0.2
0.1
0.05
0.02
0.01
T
J
= 150°C
125°C
100°C
0.005
0.002
0.001
25°C
0
10
20
70
30
40
50
60
80
V
R
REVERSE VOLTAGE (VOLTS)
90
100
0.0005
0.0002
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.0001
0.05
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
R
is sufficient below rated V
R
.
, AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
20
40
60
80 100 120 140 160
T
A
, AMBIENT TEMPERATURE (°C)
180
dc
SQUARE
WAVE
P (AV), AVERAGE POWER DISSIPATION (WATTS)
F
4
3.5
3
2.5
2
1.5
1
0.5
0
2.0
3.0
4.0
I
F (AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.0
5.0
SQUARE
WAVE
dc
I
F (AV)
Figure 3. Current Derating
(Mounting Method #3 per Note 3)
Figure 4. Power Dissipation
http://onsemi.com
2
MBR3100
400
300
C, CAPACITANCE (pF)
200
100
80
T
J
= 25°C
f = 1 MHz
50
40
0
20
40
60
80
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
NOTE 3 — MOUNTING DATA
Data shown for thermal resistance junction−to−ambient
(R
qJA
) for the mountings shown is to be used as typical
guideline values for preliminary engineering, or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR R
qJA
IN STILL AIR
Mounting
Method
1
2
3
Lead Length, L (in)
1/8
50
58
1/4
51
59
28
1/2
53
61
3/4
55
63
R
qJA
°C/W
°C/W
°C/W
Mounting Method 1
P.C. Board where available
copper surface is small.
L
L
Mounting Method 2
Vector Push−In
Terminals T−28
Mounting Method 3
P.C. Board with
2−1/2″ X 2−1/2″
copper surface.
L = 1/2’’
Board Ground Plane
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3
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
L
L
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MBR3100
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
ISSUE G
K
D
1
A
2
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 267−04 OBSOLETE, NEW STANDARD 267−05.
INCHES
MIN
MAX
0.287
0.374
0.189
0.209
0.047
0.051
1.000
−−−
MILLIMETERS
MIN
MAX
7.30
9.50
4.80
5.30
1.20
1.30
25.40
−−−
B
K
DIM
A
B
D
K
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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4
MBR3100/D
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参数对比
与MBR3100RLG相近的元器件有:MBR3100G。描述及对比如下:
型号 MBR3100RLG MBR3100G
描述 直流反向耐压(Vr):100V 平均整流电流(Io):3A 正向压降(Vf):790mV @ 3A
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
零件包装代码 DO-201AD DO-201AD
包装说明 LEAD FREE, PLASTIC, CASE 267-05, 2 PIN LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
针数 2 2
制造商包装代码 267-05 267-05
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
Is Samacsys N N
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.69 V 0.69 V
JEDEC-95代码 DO-201AD DO-201AD
JESD-30 代码 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3
最大非重复峰值正向电流 150 A 150 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 175 °C 175 °C
最低工作温度 -65 °C -65 °C
最大输出电流 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
峰值回流温度(摄氏度) 260 260
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 100 V 100 V
表面贴装 NO NO
技术 SCHOTTKY SCHOTTKY
端子面层 Tin (Sn) Tin (Sn)
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL
处于峰值回流温度下的最长时间 40 40
Base Number Matches 1 1
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