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MBR40035CTR

200 A, 30 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:Transys Electronics Limited

厂商官网:http://www.transyselectronics.com

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器件:MBR40035CTR

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器件参数
参数名称
属性值
厂商名称
Transys Electronics Limited
Reach Compliance Code
unknow
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.65 V
最大非重复峰值正向电流
3000 A
最高工作温度
175 °C
最大输出电流
200 A
最大重复峰值反向电压
35 V
技术
SCHOTTKY
文档预览
Transys
Electronics
L I M I T E D
MBR40020CT(R)
THRU
MBR400100CT(R)
SCHOTTKY DIODES MODULE TYPE 400A
Features
High Surge Capability
Types Up to 100V V
RRM
400Amp Rectifier
20-100 Volts
TWIN TOWER
A
R
Maximum Ratings
Operating Temperature: -40 C to +175
Storage Temperature: -40 C to +175
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
B
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Q
N
G
W
1
U
2
F
U
C
MBR40020CT(R)
MBR40030CT(R)
MBR40035CT(R)
MBR40040CT(R)
MBR40045CT(R)
MBR40060CT(R)
MBR40080CT(R)
MBR400100CT(R)
3
LUG
Teminal
Anode 1
LUG
Teminal
Anode 2
V
LUG
LUG
Teminal
Teminal
Cathode 1 Cathode 2
E
Electrical Characteristics @ 25
Average Forward
(Per pkg)
Current
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
Instantaneous
NOTE (1)
Forward Voltage
NOTE (1)
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
I
F(AV)
I
FSM
V
F
Unless Otherwise Specified
400A
3000A
0.65V
0.75V
0.84V
3
Baseplate
Common Cathode
3
Baseplate
R=Common Anode
T
C
=125
DIMENSIONS
INCHES
MIN
MAX
-----
¼
3.360
0.800
0.700
-----
0.650
0.120
0.130
0.510
0.490
1.379 BSC
-----
-----
- 20
1/4
0.275
0.290
3.150 BSC
-----
0.600
0.312
0.370
0.180
0.195
MM
MIN
MAX
-----
92.20
20.32
17.78
-----
16.51
3.3 0
3. 05
12.95
12.45
35.02
BSC
-----
-----
UN C
FULL
7.3 7
6.9 9
80.01
BSC
-----
15.24
9.40
7.92
4.95
4.57
8.3ms , half sine
(MBR40020CT~MBR40045CT)
(MBR40060CT)
(MBR40080CT~MBR400100CT)
I
FM
=200A;
T
j
= 25
I
R
5.0
m
A T
J
= 25
200
mA
T
J
=125
0.8
/W
Maximum Thermal
Resistance Junction
(Per leg)
To Case
R jc
DIM
A
B
C
E
F
G
H
N
Q
R
U
V
W
NOTE
2 PL
NOTE :
(1)
Pulse Test: Pulse Width 300 usec, Duty Cycle
<
2%
MBR40020CT(R) THRU MBR400100CT(R)
Figure .1-Typical Forward Characteristics
240
AvErage ForwArd Rectified Current - AmPeres
Figure .2- Forward Derating Curve
1000
600
T =25
J
200
I nStantaneous Forward Current
- Amperes
Per leg
Amp s
400
200
MBR40020CT~
100
MBR40040CT
60
40
20
10
6.0
4.0
2.0
1.0
MBR40060CT
MBR40080CT~
MBR400100CT
Per leg
160
120
Amp s
80
40
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
30
60
90
120
150
180
0
Case
Te mperature -
0
0.2
0.4
0.6
Volts
0.8
1.0
1.2
2000
1000
600
400
200
Figure .4- Typical Reverse Characteristics
Instantaneous Forward Voltage - Volts
Tj =150 C
Instantaneous Reverse
Leakage
Current - Mill
A
mperes
3000
Figure .3- Peak Forward Surge Current
8.3ms Single Half
Sine Wave
JEDEC method T =25
J
100
60
40
20
Tj =125 C
Peak Forward Surge Current -Amperes
Amps
Per leg
m
Amps
2500
2000
1500
1000
500
0
1
2
4
10
6
4
2
1
.6
.4
.2
.1
.06
.04
.02
T =75
J
6
8 10 20
Cycles
40
60 80 100
T =25
J
Number Of Cycles At 60Hz - Cycles
.01
0
10
20
30
40
50
60
70
80
90
100
Volts
Reverse Voltage - Volts
查看更多>
参数对比
与MBR40035CTR相近的元器件有:MBR40035CT。描述及对比如下:
型号 MBR40035CTR MBR40035CT
描述 200 A, 30 V, SILICON, RECTIFIER DIODE 200 A, 30 V, SILICON, RECTIFIER DIODE
厂商名称 Transys Electronics Limited Transys Electronics Limited
Reach Compliance Code unknow unknow
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.65 V 0.65 V
最大非重复峰值正向电流 3000 A 3000 A
最高工作温度 175 °C 175 °C
最大输出电流 200 A 200 A
最大重复峰值反向电压 35 V 35 V
技术 SCHOTTKY SCHOTTKY
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