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MBR4030PT

Schottky Diodes & Rectifiers 40A 30V

器件类别:分立半导体    二极管   

厂商名称:Diodes Incorporated

器件标准:

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
Diodes Incorporated
零件包装代码
TO-3P
包装说明
TO-3P, 3 PIN
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
8 weeks
其他特性
LOW POWER LOSS, FREE WHEELING DIODE
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.7 V
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
最大非重复峰值正向电流
400 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
30 V
最大反向电流
1000 µA
表面贴装
NO
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
40
文档预览
PART OBSOLETE
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
OBSOLETE – PART DISCONTINUED
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
Dim
A
B
C
D
E
G
H
J
K
L
TO-3P
Min
1.88
4.68
20.63
18.5
2.1
0.51
1.90
2.9Æ
3.78
5.2
0.89
1.82
2.92
¾
15.38
Max
2.08
5.36
22.38
21.5
2.4
0.76
16.25
2.70
3.65Æ
4.50
5.7
1.53
2.46
3.23
12.84
6.10
H
S
J
A
B
Mechanical Data
·
·
·
·
·
·
·
·
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Ordering Information: See Last Page
Marking: Type Number
Weight: 5.6 grams (approximate)
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
BS
O
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
T
R
qJC
dV/dt
T
j,
T
STG
@ I
F
= 20A, T
C
= 25°C
@ I
F
= 20A, T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
(Note 2)
(Note 1)
LE
TE
R
K
P
Q
L
N
G
C
D
M
N
P
M
M
E
Q
R
S
11.70
All Dimensions in mm
@ T
A
= 25°C unless otherwise specified
MBR
4030PT
30
21
MBR
4035PT
35
24.5
MBR
4040PT
40
28
40
MBR
4045PT
45
31.5
MBR
4050PT
50
35
MBR
4060PT
60
42
Unit
V
V
A
A
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
O
Forward Voltage Drop
@ T
C
= 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Average Rectified Output Current
400
0.70
0.60
1.0
100
1100
1.4
10,000
-65 to +150
0.80
0.70
V
mA
pF
°C/W
V/ms
°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance
Typical Thermal Resistance Junction to Case
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
MBR4030PT - MBR4060PT
Document number:
DS23019 Rev.
9
-
4
1 of 3
www.diodes.com
July 2015
ã
Diodes Incorporated
40
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
50
PART OBSOLETE
100
I
(AV)
, AVERAGE FORWARD CURRENT (A)
MBR 4030PT - MBR4045PT
10
30
MBR4050PT - MBR4060PT
20
OBSOLETE – PART DISCONTINUED
1.0
10
0
0
50
100
150
0.1
0.2
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
400
LE
TE
4000
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.9
0.8
0.3
0.4
0.6
0.7
0.5
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
T
J
= 25°C
f = 1 Mhz
8.3 ms Single half
sine-wave (JEDEC method)
300
C
T
, CAPACITANCE (pF)
1000
200
BS
O
100
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
10
T
C
= 125°C
100
1
100
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
O
1.0
0.1
T
C
= 75°C
0.01
T
C
= 25°C
0.001
0
20
40
60
80
100
T
j
= 25°C
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
MBR4030PT - MBR4060PT
Document number:
DS23019 Rev.
9
-
4
2 of 3
www.diodes.com
July 2015
ã
Diodes Incorporated
PART OBSOLETE
Ordering Information
Device
MBR4030PT
MBR4035PT
MBR4040PT
MBR4045PT
MBR4050PT
MBR4060PT
(Note 4)
Packaging
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
Shipping
30/Tube
30/Tube
30/Tube
30/Tube
30/Tube
30/Tube
OBSOLETE – PART DISCONTINUED
Notes:
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
MBR4030PT - MBR4060PT
Document number:
DS23019 Rev.
9
-
4
O
BS
O
3 of 3
www.diodes.com
LE
TE
July 2015
ã
Diodes Incorporated
查看更多>
参数对比
与MBR4030PT相近的元器件有:。描述及对比如下:
型号 MBR4030PT
描述 Schottky Diodes & Rectifiers 40A 30V
是否无铅 含铅
是否Rohs认证 符合
厂商名称 Diodes Incorporated
零件包装代码 TO-3P
包装说明 TO-3P, 3 PIN
针数 3
Reach Compliance Code not_compliant
ECCN代码 EAR99
Factory Lead Time 8 weeks
其他特性 LOW POWER LOSS, FREE WHEELING DIODE
应用 EFFICIENCY
配置 COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON
二极管类型 RECTIFIER DIODE
最大正向电压 (VF) 0.7 V
JESD-30 代码 R-PSFM-T3
JESD-609代码 e3
最大非重复峰值正向电流 400 A
元件数量 2
相数 1
端子数量 3
最高工作温度 150 °C
最低工作温度 -65 °C
最大输出电流 20 A
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 FLANGE MOUNT
峰值回流温度(摄氏度) 260
认证状态 Not Qualified
最大重复峰值反向电压 30 V
最大反向电流 1000 µA
表面贴装 NO
技术 SCHOTTKY
端子面层 Matte Tin (Sn)
端子形式 THROUGH-HOLE
端子位置 SINGLE
处于峰值回流温度下的最长时间 40
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