(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
ESD Ratings:
Machine Model = C
Human Body Model = 3B
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
T
stg
Value
60
Unit
V
20
40
240
−55 to +150
−65 to +175
> 400
> 8000
A
A
°C
°C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Value
1.8
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 20 A, T
C
= 25°C)
(I
F
= 20 A, T
C
= 125°C)
(I
F
= 40 A, T
C
= 25°C)
(I
F
= 40 A, T
C
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25°C)
(Rated DC Voltage, T
C
= 125°C)
Symbol
v
F
0.56
0.53
0.75
0.69
i
R
210
95
550
175
0.61
0.58
0.81
0.74
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBR40L60CTG
Package Type
TO−220
(Pb−Free)
Shipping
50 Units / Rail
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2
MBR40L60CTG
100
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
I
F
, AVERAGE FORWARD CURRENT
(A)
125°C
10
150°C
1
T
J
= 25°C
85°C
10
125°C
150°C
1
85°C
T
J
= 25°C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
1.1 1.2 1.3
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.0E+00
I
R
, REVERSE CURRENT (A)
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
0
85°C
150°C
125°C
1.0E+00
Figure 2. Maximum Forward Voltage
150°C
I
R
, REVERSE CURRENT (A)
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
0
T
J
= 25°C
125°C
85°C
T
J
= 25°C
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
60
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
60
Figure 3. Typical Reverse Current
36
I
F
, AVERAGE FORWARD CURRENT
(A)
32
28
24
20
16
12
8
4
0
80
90
100
110
120
130
140
150
SQUARE WAVE
dc
6
I
F
, AVERAGE FORWARD CURRENT
(A)
Figure 4. Maximum Reverse Current
R
qJC
= 1.8°C/W
R
qJA
= 70°C/W
5
dc
4
3
SQUARE WAVE
2
1
0
0
20
40
60
80
100
120
140 160
T
C
, CASE TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case per Leg
Figure 6. Current Derating, Ambient per Leg
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3
MBR40L60CTG
P
F
, AVERAGE POWER DISSIPATION (W)
40
35
30
25
SQUARE WAVE
20
15
10
5
0
0
5
10
15
20
25
30
35
I
O
, AVERAGE FORWARD CURRENT (A)
40
10
0
10
20
30
40
50
60
V
R
, REVERSE VOLTAGE (V)
dc
T
J
= 150°C
C, CAPACITANCE (pF)
10000
T
J
= 25°C
1000
100
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
100
1000
Figure 9. Thermal Response Junction−to−Case for MBR40L60CT
R(t), TRANSIENT THERMAL RESISTANCE
100
D = 0.5
0.2
10
0.1
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.05
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 10. Thermal Response Junction−to−Ambient for MBR40L60CT
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4
MBR40L60CTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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