MBR735 thru MBR7150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
TO-220AC
MECHANICAL DATA
Case:
TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.85 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5 A, T
J
=25℃
I
F
=7.5 A, T
J
=125℃
I
F
=15 A, T
J
=25℃
I
F
=15 A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1
-
V
F
0.57
0.84
0.72
I
R
dV/dt
R
θJC
R
θJA
T
J
T
STG
15
0.75
0.65
-
-
0.1
10
10000
5
15
- 55 to +150
- 55 to +175
5
MBR
735
35
24
35
MBR
745
45
31
45
MBR
750
50
35
50
MBR
760
60
42
60
7.5
15
150
0.5
0.92
0.82
-
-
0.95
0.92
-
-
mA
V/μs
O
MBR
790
90
63
90
MBR
7100
100
70
100
MBR
7150
150
105
150
UNIT
V
V
V
A
A
A
A
V
C/W
O
O
C
C
Document Number: DS_D1308048
Version: J13
MBR735 thru MBR7150
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR7xx
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-220AC
PACKING
50 / Tube
Note 1: "xx" defines voltage from 35V (MBR735) to 150V (MBR7150)
EXAMPLE
PREFERRED P/N
MBR760 C0
MBR760 C0G
MBR760HC0
PART NO.
MBR760
MBR760
MBR760
H
AEC-Q101
QUALIFIED
PACKING CODE
C0
C0
C0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
10
8
6
4
2
0
0
50
100
150
CASE TEMPERATURE (
o
C)
175
150
125
100
75
50
25
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD
A
CURRENT (A)
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
MBR735-MBR745
MBR750-MBR7150
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
Pulse Width=300μs
1% Duty Cycle
INSTANTANEOUS FORWARD CURRENT (A)
10
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
MBR735-745
MBR750-7150
INSTANTANEOUS REVERSE CURRENT (mA)
10
TJ=125℃
1
TJ=125℃
1
TJ=25℃
0.1
TJ=75℃
0.1
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
Document Number: DS_D1308048
Version: J13
MBR735 thru MBR7150
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
10000
JUNCTION CAPACITANCE (pF)
A
f=1.0MHz
Vsig=50mVp-p
1000
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
100
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
10
0.1
1
10
100
REVERSE VOLTAGE (V)
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION. (sec)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
-
2.62
2.80
0.68
3.54
14.60
0.00
13.19
4.95
4.42
1.14
5.84
2.20
0.35
Max
10.50
3.44
4.20
0.94
4.00
16.00
1.60
14.79
5.20
4.76
1.40
6.86
2.80
0.64
Unit (inch)
Min
-
0.103
0.110
0.027
0.139
0.575
0.000
0.519
0.195
0.174
0.045
0.230
0.087
0.014
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.063
0.582
0.205
0.187
0.055
0.270
0.110
0.025
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1308048
Version: J13
MBR735 thru MBR7150
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308048
Version: J13
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