MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High Voltage
Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MBR2090CT
MBR20100CT
PIN 1
PIN 3
PIN 2
CASE
2
1
3
MBRF2090CT
MBRF20100CT
PIN 1
PIN 3
PIN 2
1
2
3
TO-263AB
K
TYPICAL APPLICATIONS
2
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
1
MBRB2090CT
MBRB20100CT
PIN 1
PIN 2
MECHANICAL DATA
K
Case:
TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variation
2 x 10 A
90 V to 100 V
150 A
0.65 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Common cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 133 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
MBR2090CT
90
90
90
20
10
150
130
0.5
10 000
1500
-65 to +150
MBR20100CT
100
100
100
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
per diode
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 10-May-16
Document Number: 89033
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (2)
V
F
(1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at working
peak reverse voltage
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
SYMBOL
MAX.
0.80
0.65
0.75
100
6.0
µA
mA
V
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JA
R
JC
MBR
60
2.0
MBRF
-
3.5
MBRB
60
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBR20100CT-E3/4W
MBRF20100CT-E3/4W
MBRB20100CT-E3/4W
MBRB20100CT-E3/8W
UNIT WEIGHT (g)
1.88
1.75
1.38
1.38
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
Resistive or Inductive Load
MBRF
160
Peak Forward Surge Current (A)
Average Forward Current (A)
MBR &
MBRB
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
140
16
120
12
100
8
80
4
60
0
0
50
100
150
40
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 10-May-16
Document Number: 89033
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
T
J
= 150 °C
10
T
J
= 125 °C
1
10
1
0.1
T
J
= 25 °C
MBR(B)
0.1
0.01
0.1
1
10
100
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 -
Typical Transient Thermal Impedance
Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 125 °C
1
Junction to Case
1
0.1
0.1
0.01
MBRF
0.001
0.1
1
10
100
0.01
T
J
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics
Per Diode
Fig. 7 -
Typical Transient Thermal Impedance
Per Diode
10 000
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
1
10
100
Reverse
Voltage
(V)
Fig. 5 -
Typical Junction Capacitance
Per Diode
Revision: 10-May-16
Document Number: 89033
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
Vishay General Semiconductor
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.076 Ref.
(1.93) Ref.
45° Ref.
0.190 (4.83)
0.170 (4.32)
0.076 Ref.
(1.93) Ref.
0.110 (2.79)
0.100 (2.54)
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
PIN
0.671 (17.04)
0.651 (16.54)
7° Ref.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
2
3
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
7° Ref.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.104 (2.65)
0.096 (2.45)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 10-May-16
Document Number: 89033
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
