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MBRD660

Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, DPAK-3/2

器件类别:分立半导体    二极管   

厂商名称:Sangdest Microelectronics (Nanjing) Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Sangdest Microelectronics (Nanjing) Co Ltd
包装说明
R-PSSO-G2
Reach Compliance Code
compliant
其他特性
FREE WHEELING DIODE
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.75 V
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
125 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
6 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
60 V
最大反向电流
1000 µA
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MBRD660
Technical Data
Data Sheet N1117, Rev. A
MBRD660 SCHOTTKY RECTIFIER
Features
150℃ T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
“-A” is an AEC-Q101 qualified device
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DPAK
Circuit Diagram
Applications
Disk drives
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=85°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
60
6
125
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current *
Junction Capacitance
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
Condition
@ 6A, Pulse, T
J
= 25
C
@ 6A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R ,
T
J
= 125
C
@V
R
= 5.0V, T
C
= 25
C
f
SIG
= 1MHz
Typ.
0.70
0.60
0.01
3
300
Max.
0.75
0.70
1
10
400
Units
V
V
mA
mA
pF
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
MBRD660
Technical Data
Data Sheet N1117, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
-
-
DPAK
Specification
-55 to +150
-55 to +150
6
0.39
Units
C
C
C/W
g
Ratings and Characteristics Curves
TJ=125℃
TJ=25℃
TJ=25℃
Fig.1-Typical Junction Capacitance
Fig.2-Typical Reverse Characteristics
TJ=125℃
TJ=25℃
Fig.3-Typical Instantaneous Forward Voltage Characteristics
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
MBRD660
Technical Data
Data Sheet N1117, Rev. A
Mechanical Dimensions DPAK
SYMBOL
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
Θ
h
V
Millimeters
Min.
Max.
2.20
2.40
0.00
0.127
0.66
0.86
0.46
0.60
6.50
6.70
5.13
5.46
4.83 REF.
6.00
6.20
2.186
2.386
9.70
10.40
2.90 REF.
1.40
1.70
1.60 REF.
0.60
1.00
1.10
1.30
0.00
0.30
5.35 REF.
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.026
0.034
0.018
0.024
0.256
0.264
0.202
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.381
0.409
0.144 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0.000
0.012
0.211 REF.
Ordering Information
Device
MBRD660
MBRD660TR
Marking Diagram
Shipping
2500pcs / reel
2500pcs / reel
Where XXXXX is YYWWL
MBRD660
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Package
DPAK
(Pb-Free)
DPAK
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions:Molding
resin
Epoxy resin UL:94V-0
Carrier Tape & Reel Specification DPAK
SYMBOL
A
B
C
d
E
F
P0
P
P1
W
6.80
10.40
2.60
Φ1.45
1.65
7.40
3.90
7.90
1.90
15.90
Millimeters
Min.
Max.
7.00
10.60
2.80
Φ1.65
1.85
7.60
4.10
8.10
2.10
16.30
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
MBRD660
Technical Data
Data Sheet N1117, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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参数对比
与MBRD660相近的元器件有:MBRD660TR。描述及对比如下:
型号 MBRD660 MBRD660TR
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, DPAK-3/2 Rectifier Diode,
厂商名称 Sangdest Microelectronics (Nanjing) Co Ltd Sangdest Microelectronics (Nanjing) Co Ltd
包装说明 R-PSSO-G2 DPAK-3/2
Reach Compliance Code compliant unknown
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.75 V 0.75 V
JESD-30 代码 R-PSSO-G2 R-PSSO-G2
最大非重复峰值正向电流 125 A 125 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 6 A 6 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 60 V 60 V
最大反向电流 1000 µA 1000 µA
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子形式 GULL WING GULL WING
端子位置 SINGLE SINGLE
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