SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
・Average
Output Rectified Current
: I
O
=6A.
・Repetitive
Peak Reverse Voltage
: V
RRM
=60V.
H
G
F
F
A
C
MBRD6U60CT
SCHOTTKY BARRIER TYPE DIODE
K
D
L
B
J
E
N
M
DIM MILLIMETERS
_
A
6.60 + 0.20
_
6.10 + 0.20
B
_
5.34 + 0.30
C
_
D
0.70 + 0.20
_
E
2.70 + 0.15
_
2.30 + 0.10
F
0.96 MAX
G
0.90 MAX
H
_
1.80 + 0.20
J
_
2.30 + 0.10
K
_
0.50 + 0.10
L
_
M
0.50 + 0.10
0.70 MIN
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified
Current (Tc=114℃) (Note)
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
60
6
UNIT
V
A
1
2
3
1. ANODE
2. CATHODE
3. ANODE
45
-40½150
-55½150
A
℃
℃
DPAK (1)
Note : average forward current of centertap full wave connection.
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak
Reverse Current
Thermal Resistance
Note : A value of one cell
(Note)
(Note)
(Note)
SYMBOL
V
FM
I
RRM
R
th(j-c)
I
FM
=3A
V
RRM
=60V
Juction to Case
TEST CONDITION
MIN.
-
-
-
TYP.
-
-
-
MAX.
0.65
50
6.0
UNIT
V
µA
℃/W
2010. 10. 8
Revision No : 0
1/2
MBRD6U60CT
I
F
- V
F
REVERSE CURRENT I
R
(mA)
100
100
10
I
R
- V
R
FORWARD CURRENT I
F
(A)
10
T
j
=25 C
T
j
=150 C
T
j
=75 C
T
j
=125 C
1
0.1
0.01
T
j
=25 C
T
j
=75 C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0.001
0
10
20
30
40
50
60
70
FORWARD VOLTAGE V
F
(V)
REVERSE VOLTAGE V
R
(V)
2010. 10. 8
Revision No : 0
2/2
