MBRF10100CTR
Technical Data
Data Sheet N0078, Rev. B
MBRF10100CTR SCHOTTKY RECTIFIER
Features
150C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
ITO-220AB
Additional testing can be offered upon request
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive
Surge Current(Per Leg)
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
Max.
100
5(Per Leg)
10(Per Device)
120
Units
V
A
A
50% duty cycle @Tc=105°C, rectangular
wave form
8.3ms, Half Sine pulse
Electrical Characteristics:
Characteristics
Forward Voltage Drop(Per Leg)*
Reverse Current(Per Leg)*
Junction Capacitance(Per Leg)
Series Inductance(Per Leg)
Voltage Rate of Change
RSM Isolation Voltage
(t = 1.0 second, R. H. < =30%,
T
A
= 25
C)
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
V
ISO
Condition
@5A, Pulse, T
J
= 25
C
@5A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C,
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Clip mounting, the epoxy body away
from the heatsink edge by more than
0.110" along the lead direction.
Clip mounting, the epoxy body is inside
the heatsink.
Screw mounting, the epoxy body is inside
the heatsink.
Typ.
0.79
0.65
0.02
4
150
8.0
-
-
-
-
Max.
0.85
0.75
1.0
15
300
-
10,000
4500
3500
1500
Units
V
V
mA
mA
pF
nH
V/s
V
* Pulse width < 300 µs, duty cycle < 2%
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MBRF10100CTR
Technical Data
Data Sheet N0078, Rev. B
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
wt
Condition
DC operation
-
-
-
Specification
-55 to +150
-55 to +150
4.5
Units
C
C
C/W
g
ITO-220AB
2
Ratings and Characteristics Curves
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MBRF10100CTR
Technical Data
Data Sheet N0078, Rev. B
Mechanical Dimensions ITO-220AB
SYMBOL
A
A1
A2
A3
b
b1
b2
b3
b4
c
D
E
e
e1
H1
L
L1
L2
L3
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
1.20
1.60
0.50
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
Millimeters
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
1.30
1.70
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
3.50
3.19
2.70
5°
4°
10°
5°
5°
MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
1.45
1.85
0.75
15.20
10.36
6.90
13.70
2.00
1.20
1.00
3.70
3.39
2.90
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
MBR
F
10
100
CTR
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (10A)
= Reverse Voltage (100V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
Ordering Information
Device
MBRF10100CTR
ITO-220AB
(Pb-Free)
Package
Shipping
50 pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
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MBRF10100CTR
Technical Data
Data Sheet N0078, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department
for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other
cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no
responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits
described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary
damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing)
Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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