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MBRF10H45

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
厂商名称
Vishay(威世)
Reach Compliance Code
unknow
ECCN代码
EAR99
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.55 V
最大非重复峰值正向电流
150 A
元件数量
1
最高工作温度
175 °C
最大输出电流
10 A
最大重复峰值反向电压
45 V
表面贴装
NO
技术
SCHOTTKY
Base Number Matches
1
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MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
ITO-220AC
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
MBR10Hxx
PIN 1
PIN 2
2
1
MBRF10Hxx
PIN 1
1
CASE
PIN 2
TO-263AB
K
2
1
MBRB10Hxx
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
10 A
35 V to 60 V
150 A
0.55 V, 0.61 V
100 µA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
1.0
20
25
10 000
MBR10H35
35
35
35
MBR10H45
45
45
45
10
80
150
0.5
10
MBR10H50
50
50
50
MBR10H60
60
60
60
UNIT
V
V
V
A
mJ
A
A
mJ
kV
V/µs
Document Number: 88780
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
SYMBOL
T
J
T
STG
V
AC
MBR10H35
MBR10H45
MBR10H50
MBR10H60
UNIT
°C
°C
V
- 65 to + 175
- 65 to + 175
1500
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR10H35
MBR10H45
TYP.
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
-
0.49
-
0.62
-
4.0
MAX.
0.63
0.55
0.75
0.68
100
12
MBR10H50
MBR10H60
TYP.
-
0.57
-
0.68
-
2.0
MAX.
0.71
0.61
0.85
0.71
100
12
UNIT
Maximum instantaneous forward voltage
(1)
V
F
V
Maximum reverse current at rated V
R (2)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
I
R
µA
mA
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance
SYMBOL
R
θJC
MBR
2.0
MBRF
4.0
MBRB
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
Note:
(1) Automotive grade AEC Q101 qualified
PREFERRED P/N
MBR10H45-E3/45
MBRF10H45-E3/45
MBRB10H45-E3/45
MBRB10H45-E3/81
MBR10H45HE3/45
(1)
MBRF10H45HE3/45
(1)
MBRB10H45HE3/45
(1)
MBRB10H45HE3/81
(1)
UNIT WEIGHT (g)
1.80
1.94
1.33
1.33
1.80
1.94
1.33
1.33
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88780
Revision: 19-May-08
MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
15
100
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
10
1
MBR, MBRB
10
MBRF
T
J
= 150 °C
T
J
= 125 °C
0.1
0.01
0.001
T
J
= 25 °C
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
5
0
0
25
50
75
100
125
150
175
0.0001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics
175
10 000
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
Peak Forward Surge Current (A)
125
100
Junction Capacitance (pF)
1
10
100
150
1000
75
50
25
100
0
1
10
100
Number
of Cycles at 60 Hz
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
10
10
T
J
= 150 °C
1
T
J
= 125 °C
0.1
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T
J
= 25 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
0.1
0.01
0.1
1
10
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88780
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
MBR(F,B)10H35 thru MBR(F,B)10H60
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
CASE
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.671 (17.04)
0.651 (16.54)
PIN
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
0.191 (4.85)
0.171 (4.35)
7° REF.
2
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88780
Revision: 19-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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参数对比
与MBRF10H45相近的元器件有:MBRB10H35、MBRB10H45、MBRB10H45-E3/45、MBRB10H45HE3/45、MBRB10H45HE3/81、MBRB10H50、MBRF10H45HE3/45、MBRF10H50、MBRF10H60。描述及对比如下:
型号 MBRF10H45 MBRB10H35 MBRB10H45 MBRB10H45-E3/45 MBRB10H45HE3/45 MBRB10H45HE3/81 MBRB10H50 MBRF10H45HE3/45 MBRF10H50 MBRF10H60
描述 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.55 V 0.55 V 0.55 V 0.55 V 0.55 V 0.55 V 0.61 V 0.55 V 0.61 V 0.61 V
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 1 1 1 1 1 1 1 1 1 1
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
最大输出电流 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
最大重复峰值反向电压 45 V 35 V 45 V 45 V 45 V 45 V 50 V 45 V 50 V 60 V
表面贴装 NO YES YES YES YES YES YES NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
厂商名称 Vishay(威世) Vishay(威世) - Vishay(威世) Vishay(威世) - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
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