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MBRF1660CT

Rectifier Diode,

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

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器件参数
参数名称
属性值
厂商名称
Galaxy Semi-Conductor Co Ltd
Reach Compliance Code
unknow
ECCN代码
EAR99
文档预览
BL
FEATURES
GALAXY ELECTRICAL
MBRF1635CT - - - MBRF1660CT
VOLTAGE RANGE: 35 - 60 V
CURRENT: 16 A
DUAL
SCHOTTKY RECTIFIERS
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
ITO-220AB
0.188(4.77)
0.172(4.36)
0.405(10.27)
0.383(9.72)
0.140(3.56)
0.130(3.30)
0.676(17.2)
0.646(16.4)
DIA
0.110(2.80)
0.100(2.54)
0.131(3.39)
0.122(3.08)
DIA
0.600(15.5)
0.580(14.5)
0.350(8.89)
0.330(8.38)
PIN
1
2
3
0.560(14.22)
0.530(13.46)
MECHANICAL DATA
Cas e:JEDEC
ITO-220AB,m
olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Weight:
0.08ounce, 2.24 grams
Pos ition: Any
0.191(4.85)
0.171(4.35)
0.060(1.52)
0.110(2.80)
0.100(2.54)
0.105(2.67)
0.095(2.41)
0.205(5.20)
0.195(4.95)
hzh
j kc
vx
0.037(0.94)
0.027(0.69)
PIN1
0.022(0.55)
0.014(0.36)
PIN2
PIN3
Dimensions in inches and(millimeters)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
MBRF
1635CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device11111111
m
rectified current @T
C
= 125°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage per leg
(NOTE 1)
(I
F
=8.0A ,T
C
=125
)
(I
F
=8.0A,T
C
=25 )
MBRF
1645CT
45
32
45
16.0
150.0
0.63
MBRF
1650CT
50
35
50
MBRF
1660CT
60
42
60
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
35
25
35
0.75
V
0.65
1.0
50
1.5
-
55
---- + 150
-
55
---- + 175
www.galaxycn.com
V
F
0.57
0.2
40
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
mA
/W
Maximum thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2.
Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.
Document Number 0267052
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
MBRF1635CT - - - MBRF1660CT
FIG.1 -- FORWARD CURRENT DERATING CURVE
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PERLEG
175
AVERAGE FORWARD
CURRENT,AMPERES
20
16
12
8
4
0
0
Resistive or inductive Load
PEAK FORWARD SURGE
CURRENT,AMPERES
150
125
100
75
50
25
T
J
=T
J
max.
8.3ms Single Half Sine Wave
(JEDEC Method)
50
100
150
1
10
100
111
CASE TEMPERATURE
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC PERLEG
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
40
10
T
J
=125
Pulse Width=300
µ
s
1% Duty Cycle
T
J
=25
INSTANTANEOUS REVERSE
CURRENT,MILLIAMPERES
40
10
T
J
=125
1
T
J
=75
1
0.1
0.1
MBRF1635CT-MBRF1645CT
0.01
MBRF1635CT-MBRF1645CT
MBRF1650CT-MBRF1660CT
T
J
=25
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2
MBRF1650CT-MBRF1660CT
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
www.galaxycn.com
Document Number 0267052
BL
GALAXY ELECTRICAL
2.
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