MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL 3035
CT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.70
V
F
0.60
0.82
0.73
I
R
dV/dt
R
θJC
T
J
T
STG
20
1
0.75
0.65
0.90
0.78
0.2
15
10000
4
- 55 to +150
- 55 to +150
10
0.84
0.70
0.94
0.82
35
24
35
3045
CT
45
31
45
3050
CT
50
35
50
3060
CT
60
42
60
30
30
200
0.5
0.95
0.80
1.05
0.92
mA
V/μs
O
3090 30100 30150 30200 UNIT
CT
90
63
90
CT
100
70
100
CT
150
105
150
CT
200
140
200
V
V
V
A
A
A
A
V
C/W
O
O
C
C
Document Number: DS_D1308022
Version: L13
MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBRF30xxCT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
C0
PACKING CODE
GREEN COMPOUND
CODE
Suffix "G"
ITO-220AB
50 / Tube
PACKAGE
PACKING
Note 1: "xx" defines voltage from 35V (MBRF3035CT) to 200V (MBRF30200CT)
EXAMPLE
PREFERRED P/N
MBRF3060CT C0
MBRF3060CT C0G
MBRF3060CTHC0
PART NO.
MBRF3060CT
MBRF3060CT
MBRF3060CT
H
AEC-Q101
QUALIFIED
PACKING CODE
C0
C0
C0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
AVERAGE FORWARD
A
CURRENT (A)
25
20
15
10
5
0
50
60
70
80
90
100
110
120
130
140
150
CASE TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
PEAK FORWARD SURGE CURRENT (A)
225
200
175
150
125
100
75
50
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
Pulse Width=300μs
1% Duty Cycle
INSTANTANEOUS FORWARD CURRENT (A)
MBRF3035CT-3045CT
INSTANTANEOUS REVERSE CURRENT (mA)
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
10
10
1
TJ=75℃
1
MBRF3050CT-3060CT
MBRF3090CT-30100CT
0.1
MBRF30150CT-30200CT
0.1
TJ=25℃
0.01
MBRF3035CT - 3045CT
MBRF3050CT - 30200CT
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
Document Number: DS_D1308022
Version: L13
MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
MBRF3035CT - 3045CT
MBRF3050CT - 3060CT
MBRF3090CT - 30200CT
f=1.0MHz
Vsig=50mVp-p
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10000
JUNCTION CAPACITANCE (pF)
A
100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
1000
1
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
0.95
0.50
2.40
14.80
-
12.60
-
2.41
Max
4.70
3.16
2.96
0.76
6.90
10.30
3.40
1.45
0.90
3.20
15.50
4.10
13.80
1.80
2.67
Unit (inch)
Min
0.169
0.098
0.091
0.018
0.248
0.378
0.118
0.037
0.020
0.094
0.583
-
0.496
-
0.095
Max
0.185
0.124
0.117
0.030
0.272
0.406
0.134
0.057
0.035
0.126
0.610
0.161
0.543
0.071
0.105
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1308022
Version: L13
MBRF3035CT thru MBRF30200CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308022
Version: L13
