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MBRF3035CT thru MBRF30200CT

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Dual Common Cathode Schottky Rectifier

ITO-220AB

MECHANICAL DATA

Case:

ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

=15A, T

=25℃

=15A, T

=125℃

=30A, T

=25℃

=30A, T

=125℃

Maximum reverse current @ rated VR

Voltage rate of change (Rated V

)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0

μs,

1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

=25

℃

=125

℃

SYMBOL 3035

RRM

RMS

F(AV)

FRM

FSM

RRM

0.70

0.60

0.82

0.73

dV/dt

θJC

STG

0.75

0.65

0.90

0.78

0.2

10000

- 55 to +150

0.84

0.70

0.94

0.82

3045

3050

3060

200

0.5

0.95

0.80

1.05

0.92

V/μs

3090 30100 30150 30200 UNIT

100

150

105

150

200

140

200

C/W

Document Number: DS_D1308022

Version: L13

MBRF3035CT thru MBRF30200CT

Taiwan Semiconductor

ORDERING INFORMATION

PART NO.

MBRF30xxCT

(Note 1)

AEC-Q101

QUALIFIED

Prefix "H"

PACKING CODE

GREEN COMPOUND

CODE

Suffix "G"

ITO-220AB

50 / Tube

PACKAGE

PACKING

Note 1: "xx" defines voltage from 35V (MBRF3035CT) to 200V (MBRF30200CT)

EXAMPLE

PREFERRED P/N

MBRF3060CT C0

MBRF3060CT C0G

MBRF3060CTHC0

PART NO.

MBRF3060CT

AEC-Q101

QUALIFIED

PACKING CODE

Green compound

AEC-Q101 qualified

GREEN COMPOUND

CODE

DESCRIPTION

RATINGS AND CHARACTERISTICS CURVES

(TA=25℃ unless otherwise noted)

FIG.1 FORWARD CURRENT DERATING CURVE

AVERAGE FORWARD

CURRENT (A)

100

110

120

130

140

150

CASE TEMPERATURE (

RESISTIVE OR

INDUCTIVELOAD

WITH HEATSINK

PEAK FORWARD SURGE CURRENT (A)

225

200

175

150

125

100

FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE

CURRENT PER LEG

8.3ms Single Half Sine Wave

JEDEC Method

NUMBER OF CYCLES AT 60 Hz

100

FIG. 3 TYPICAL FORWARD CHARACTERISTICS

PER LEG

100

Pulse Width=300μs

1% Duty Cycle

INSTANTANEOUS FORWARD CURRENT (A)

MBRF3035CT-3045CT

INSTANTANEOUS REVERSE CURRENT (mA)

100

FIG. 4 TYPICAL REVERSE CHARACTERISTICS

PER LEG

TJ=125℃

TJ=75℃

MBRF3050CT-3060CT

MBRF3090CT-30100CT

0.1

MBRF30150CT-30200CT

0.1

TJ=25℃

0.01

MBRF3035CT - 3045CT

MBRF3050CT - 30200CT

0.001

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

0.01

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

FORWARD VOLTAGE (V)

1.1 1.2

Document Number: DS_D1308022

Version: L13

MBRF3035CT thru MBRF30200CT

Taiwan Semiconductor

FIG. 5 TYPICAL JUNCTION CAPACITANCE

PER LEG

MBRF3035CT - 3045CT

MBRF3050CT - 3060CT

MBRF3090CT - 30200CT

f=1.0MHz

Vsig=50mVp-p

FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE

PER LEG

10000

JUNCTION CAPACITANCE (pF)

100

TRANSIENT THERMAL

IMPEDANCE (℃/W)

1000

100

0.1

100

REVERSE VOLTAGE (V)

0.1

0.01

0.1

T-PULSE DURATION(s)

100

PACKAGE OUTLINE DIMENSIONS

Unit (mm)

Min

4.30

2.50

2.30

0.46

6.30

9.60

3.00

0.95

0.50

2.40

14.80

12.60

2.41

Max

4.70

3.16

2.96

0.76

6.90

10.30

3.40

1.45

0.90

3.20

15.50

4.10

13.80

1.80

2.67

Unit (inch)

Min

0.169

0.098

0.091

0.018

0.248

0.378

0.118

0.037

0.020

0.094

0.583

0.496

0.095

Max

0.185

0.124

0.117

0.030

0.272

0.406

0.134

0.057

0.035

0.126

0.610

0.161

0.543

0.071

0.105

DIM.

MARKING DIAGRAM

P/N

YWW

= Specific Device Code

= Green Compound

= Date Code

= Factory Code

Document Number: DS_D1308022

Version: L13

MBRF3035CT thru MBRF30200CT

Taiwan Semiconductor

CREAT BY ART

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Document Number: DS_D1308022

Version: L13

参数对比

与MBRF3060CTC0G相近的元器件有：MBRF30200CTC0、MBRF3035CTC0、MBRF30150CTC0、MBRF30150CTC0G、MBRF3050CTC0G、MBRF3090CTC0、MBRF3090CTC0G、MBRF3090CTHC0。描述及对比如下：

型号	MBRF3060CTC0G	MBRF30200CTC0	MBRF3035CTC0	MBRF30150CTC0	MBRF30150CTC0G	MBRF3050CTC0G	MBRF3090CTC0	MBRF3090CTC0G	MBRF3090CTHC0
描述	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合
包装说明	ITO-220AB, 3 PIN	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.9 V	1.05 V	0.82 V	1.05 V	1.05 V	0.9 V	0.94 V	0.94 V	0.94 V
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
最大非重复峰值正向电流	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A
元件数量	2	2	2	2	2	2	2	2	2
相数	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
最大重复峰值反向电压	60 V	200 V	35 V	150 V	150 V	50 V	90 V	90 V	90 V
最大反向电流	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
厂商名称	Taiwan Semiconductor	-	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor