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MBRS120TR

1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AA

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
DO-214AA
包装说明
R-PDSO-C2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY, FREE WHEELING DIODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.35 V
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值正向电流
40 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
245
认证状态
Not Qualified
最大重复峰值反向电压
20 V
表面贴装
YES
技术
SCHOTTKY
端子面层
TIN LEAD
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin PD-20644 rev. D 03/03
MBRS120
SCHOTTKY RECTIFIER
1 Amp
SMB
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5 µs sine
V
F
T
J
@ 1.0Apk, T
J
= 125°C
range
Description/Features
Units
A
V
A
V
°C
The MBRS120 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
MBRS120
1.0
20
310
0.35
- 65 to 150
Device Marking: IR12
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
1
2
4.70 (.185)
4.10 (.161)
1 POLARITY
2 PART NUMBER
2.5 TYP.
(.098 TYP.)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
SOLDERING PAD
2.0 TYP.
(.079 TYP.)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
MBRS120
Bulletin PD-20644 rev. D 03/03
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBRS120
20
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
Max. Peak One Cycle Non-Repetitive
Surge Current
E
AS
I
AR
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
Value
1.0
310
40
2.0
0.8
Units Conditions
A
50% duty cycle @ T
L
= 138°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1A, L = 4mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Typ.
0.42
0.46
0.33
0.39
0.30
0.36
Max.
0.45
0.52
0.37
0.45
0.35
0.43
0.2
6.0
20
-
-
10000
Units
V
V
V
V
V
V
mA
mA
mA
pF
nH
V/ µs
Conditions
@ 1A
@ 2A
@ 1A
@ 2A
@ 1A
@ 2A
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100kHz to
1Mhz), @ 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
V
R
= rated V
R
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current (1)
0.015
2.0
7.0
C
T
L
S
Typical Junction Capacitance
Typical Series Inductance
110
2.0
-
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
Value
- 65 to 150
30
Units
°C
°C
°C/W DC operation
80
°C/W
Conditions
Max. Junction Temperature Range (*) - 65 to 150
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
to Ambient
Wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.10(0.003) gr (oz)
SMB
IR12
(**) Mounted 1 inch square PCB
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
2
www.irf.com
MBRS120
Bulletin PD-20644 rev. D 03/03
100
Tj = 150˚C
Reverse Current - I
R
(mA)
10
10
1
0.1
0.01
0.001
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
0.0001
0
5
10
15
20
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1
Tj = 150˚C
Tj = 125˚C
1000
Junction Capacitance - C
T
(pF)
Tj = 100˚C
Tj = 25˚C
Tj = 25˚C
100
0.1
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
10
0
4
8
12
16
20
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
MBRS120
Bulletin PD-20644 rev. D 03/03
150
Allowable Lead Temperature (°C)
Allowable Power Loss (Watts)
0.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
145
0.4
0.3
0.2
0.1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
140
Square wave
DC
135
see note (2)
130
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
0
0.4
0.8
1.2
1.6
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
Tj = 25˚C
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D)
4
www.irf.com
MBRS120
Bulletin PD-20644 rev. D 03/03
Tape & Reel Information
Dimensions in millimetres and (inches)
Marking & Identification
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
Ordering Information
MBRS120TR - TAPE AND REEL
WHEN ORDERING, INDICATE
3000 PIECES).
EXAMPLE:
MBRS120TR - 6000 PIECES
THE
PART
NUMBER AND THE QUANTITY ( IN MULTIPLES OF
IR12
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
YEAR
www.irf.com
5
查看更多>
参数对比
与MBRS120TR相近的元器件有:MBRS120。描述及对比如下:
型号 MBRS120TR MBRS120
描述 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AA
是否Rohs认证 不符合 不符合
零件包装代码 DO-214AA DO-214AA
包装说明 R-PDSO-C2 R-PDSO-C2
针数 2 2
Reach Compliance Code compli unknow
ECCN代码 EAR99 EAR99
Is Samacsys N N
其他特性 HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.35 V 0.35 V
JEDEC-95代码 DO-214AA DO-214AA
JESD-30 代码 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e0 e0
湿度敏感等级 1 1
最大非重复峰值正向电流 40 A 310 A
元件数量 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最大输出电流 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 20 V 20 V
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子面层 TIN LEAD Tin/Lead (Sn/Pb)
端子形式 C BEND C BEND
端子位置 DUAL DUAL
Base Number Matches 1 1
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