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MBRTA60080R

Schottky Diodes u0026 Rectifiers Schottky Rectifier - 80 V - 600 A - Three Tower(Isolation)

器件类别:半导体    分立半导体   

厂商名称:GeneSiC

厂商官网:http://www.genesicsemi.com/

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器件:MBRTA60080R

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器件参数
参数名称
属性值
产品种类
Product Category
Schottky Diodes & Rectifiers
制造商
Manufacturer
GeneSiC
产品
Product
Schottky Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
Module
If - Forward Current
600 A
Vrrm - Repetitive Reverse Voltage
80 V
Vf - Forward Voltage
0.88 V
Ifsm - Forward Surge Current
4000 A
技术
Technology
Si
Ir - Reverse Current
1 uA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 150 C
工作温度范围
Operating Temperature Range
- 40 C to + 150 C
工厂包装数量
Factory Pack Quantity
25
文档预览
MBRTA60045 thru MBRTA600100R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA60045(R) MBRTA60060(R)MBRTA60080(R)MBRTA600100(R) Unit
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
56
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRTA60045(R) MBRTA60060(R)MBRTA60080(R)MBRTA600100(R) Unit
600
4000
0.70
1
10
50
0.28
600
4000
0.75
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction - case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRTA60045 thru MBRTA600100R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
MBRTA60045 thru MBRTA600100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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参数对比
与MBRTA60080R相近的元器件有:MBRTA600100、MBRTA60060R、MBRTA60045。描述及对比如下:
型号 MBRTA60080R MBRTA600100 MBRTA60060R MBRTA60045
描述 Schottky Diodes u0026 Rectifiers Schottky Rectifier - 80 V - 600 A - Three Tower(Isolation) Schottky Diodes u0026 Rectifiers Schottky Rectifier - 100 V - 600 A - Three Tower(Isolation) Schottky Diodes u0026 Rectifiers Schottky Rectifier - 60 V - 600 A - Three Tower(Isolation) Schottky Diodes & Rectifiers Schottky Rectifier - 45 V - 600 A - Three Tower(Isolation)
产品种类
Product Category
Schottky Diodes & Rectifiers - Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
制造商
Manufacturer
GeneSiC - GeneSiC GeneSiC
产品
Product
Schottky Diodes - Schottky Diodes Schottky Diodes
安装风格
Mounting Style
SMD/SMT - SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
Module - Module Module
If - Forward Current 600 A - 600 A 600 A
Vrrm - Repetitive Reverse Voltage 80 V - 60 V 45 V
Vf - Forward Voltage 0.88 V - 0.8 V 0.75 V
Ifsm - Forward Surge Current 4000 A - 4000 A 4000 A
技术
Technology
Si - Si Si
Ir - Reverse Current 1 uA - 1 uA 1 uA
最小工作温度
Minimum Operating Temperature
- 40 C - - 40 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 150 C - + 150 C + 150 C
工作温度范围
Operating Temperature Range
- 40 C to + 150 C - - 40 C to + 150 C - 40 C to + 150 C
工厂包装数量
Factory Pack Quantity
25 - 25 25
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