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MBS10-KRC

Bridge Rectifier Diode,

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
包装说明
R-PDSO-G4
Reach Compliance Code
compliant
ECCN代码
EAR99
最小击穿电压
1000 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PDSO-G4
最大非重复峰值正向电流
35 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
1000 V
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
文档预览
MBS6-K thru MBS10-K
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
MBS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
On glass-epoxy P.C.B.
On aluminum substrate
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 0.4 A
Maximum DC reverse current
at rated DC blocking voltage
T
J
=25
T
J
=125℃
V
RRM
V
RMS
V
DC
I
F(AV)
SYMBOL
MBS6-K
MBS6
600
420
600
MBS8-K
MBS8
800
560
800
0.5
0.8
35
5.08
1.0
5
100
13
20
85
- 55 to +150
- 55 to +150
O
MBS10-K
MBS10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
t
V
F
I
R
Cj
R
θjL
R
θjA
T
J
T
STG
A
A
2
s
V
μA
pF
C/W
O
O
Typical junction capacitance Per Leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
C
C
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Document Number: DS_D1312024
Version: B13
MBS6-K thru MBS10-K
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBSx-K
(Note 1)
PACKING CODE
PACKAGE
PACKING
RC
MBS
3,000 / 13" Paper reel
Note 1: "x" defines voltage from 600V (MBS6-K) to 1000V (MBS10-K)
EXAMPLE
PREFERRED P/N
MBS10-K RC
PART NO.
MBS10-K
PACKING CODE
RC
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
1
RESISTIVE OR INDUCTIVE LOAD
WITH HEATSINK
INSTANTANEOUS REVERSE
A
CURRENT (μA)
100
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT (A)
0.8
Aluminum Substrate
10
TJ=125℃
0.6
1
0.4
0.2
0.1
Glass Epoxy P.C.B.
TJ=25℃
0.01
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE (
o
C)
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
PEAK FORWARD SURGE CURRENT (A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
35
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
F=50Hz
F=60Hz
Single Half Sine-Wave
(JEDEC Method)
10
INSTANTANEOUS FORWARD
A
CURRENT (A)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
Document Number: DS_D1312024
Version: B13
MBS6-K thru MBS10-K
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
30
CAPACITANCE (pF)
a
25
20
15
10
5
0
0.1
1
10
100
REVERSE VOLTAGE (V)
f=1.0MHz
Vslg=50mVp-p
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
4.50
0.56
3.60
-
2.20
2.30
-
-
0.95
0.70
0.15
1.10
Max
4.90
0.84
5.00
6.90
2.60
2.70
0.20
2.90
1.53
1.10
0.35
2.12
Unit (inch)
Min
0.177
0.022
0.142
-
0.087
0.091
-
-
0.037
0.028
0.006
0.043
Max
0.193
0.033
0.197
0.272
0.102
0.106
0.008
0.114
0.060
0.043
0.014
0.083
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
F
Unit (mm)
1.7
0.9
4.4
8.1
1.3
6.3
Unit (inch)
0.067
0.035
0.173
0.319
0.051
0.248
MARKING DIAGRAM
P/N
YW
F
= Marking Code
= Date Code
= Factory Code
Document Number: DS_D1312024
Version: B13
MBS6-K thru MBS10-K
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1312024
Version: B13
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参数对比
与MBS10-KRC相近的元器件有:MBS6-KRC。描述及对比如下:
型号 MBS10-KRC MBS6-KRC
描述 Bridge Rectifier Diode, Bridge Rectifier Diode,
厂商名称 Taiwan Semiconductor Taiwan Semiconductor
包装说明 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
最小击穿电压 1000 V 600 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G4 R-PDSO-G4
最大非重复峰值正向电流 35 A 35 A
元件数量 4 4
相数 1 1
端子数量 4 4
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 0.5 A 0.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 1000 V 600 V
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
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