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MC10H116MEL

TRIPLE LINE RECEIVER, PDIP16
三线接收器, PDIP16

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOIC
包装说明
EIAJ, SO-16
针数
16
Reach Compliance Code
unknow
ECCN代码
EAR99
差分输出
YES
输入特性
DIFFERENTIAL
接口集成电路类型
LINE RECEIVER
接口标准
GENERAL PURPOSE
JESD-30 代码
R-PDSO-G16
JESD-609代码
e4
长度
10.2 mm
标称负供电电压
-5.2 V
功能数量
3
端子数量
16
最高工作温度
75 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP16,.3
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
-5.2 V
认证状态
Not Qualified
最大接收延迟
1.3 ns
接收器位数
3
座面最大高度
2.05 mm
最大压摆率
23 mA
表面贴装
YES
技术
ECL
温度等级
COMMERCIAL EXTENDED
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
5.275 mm
文档预览
MC10H116
Triple Line Receiver
Description
The MC10H116 is a triple differential amplifier designed for use in
sensing differential signals over long lines and is a functional/pinout
duplication of the MC10116, with 100% improvement in propagation
delay and no increase in power supply current. For termination
information see
AND8020.
Features
www.onsemi.com
Propagation Delay, 1.0 ns Typical
Power Dissipation 85 mW Typ/Pkg (same as MECL 10K™)
Improved Noise Margin 150 mV (Over Operating Voltage and
16
1
PDIP−16
P SUFFIX
CASE 648−08
20
1
PLCC−20
FN SUFFIX
CASE 775−02
16
1
Temperature Range)
Voltage Compensated
MECL 10K Compatible
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
4
5
9
10
12
13
V
BB
*
V
CC1
= Pin 1
V
CC2
= Pin 16
V
EE
= Pin 8
When input pin with
bubble goes positive
it’s respective output
pin with bubble goes
positive.
2
3
6
7
14
15
11
*V
BB
to be used to supply bias to the MC10H116 only and bypassed
(when used) with 0.01
mF
to 0.1
mF
capacitor to ground (0 V). V
BB
can
source < 1.0 mA.
The MC10H116 is designed to be used in sensing differential signals
over long lines. The bias supply (V
BB
) is made available to make the
device useful as a Schmitt trigger, or in other applications where a
stable reference voltage is necessary.
Active current sources provide these receivers with excellent
common−mode noise rejection. If any amplifier in a package is not
used, one input of that amplifier must be connected to V
BB
to prevent
unbalancing the current−source bias network.
The MC10H116 does not have internal−input pull− down resistors.
This provides high impedance to the amplifier input and facilitates
differential connections.
Applications:
Low Level Receiver
Voltage Level
Schmitt Trigger
Interface
SOIC−16
D SUFFIX
CASE 751B−05
MARKING DIAGRAMS*
16
1
MC10H116P
AWLYYWWG
120
10H116G
AWLYYWW
16
10H116G
AWLYWW
1
A
WL
YY
WW
= Assembly Location
= Wafer Lot
= Year
= Work Week
*For additional marking information, refer to
Application Note
AND8002/D.
Figure 1. Logic Diagram
ORDERING INFORMATION
Device
V
CC1
A
OUT
A
OUT
A
IN
A
IN
B
OUT
B
OUT
V
EE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC2
C
OUT
C
OUT
C
IN
C
IN
V
BB
B
IN
B
IN
MC10H116FNG
MC10H116FNR2G
MC10H116PG
MC10H116DR2G
MC10H116DG
Package
SOIC−16
(Pb-Free)
SOIC−16
(Pb-Free)
PLCC−20
(Pb-Free)
PLCC−20
(Pb-Free)
PDIP−16
(Pb-Free)
Shipping
48 Units/Tube
2500/Tape & Reel
46 Units/Tube
500/Tape & Reel
25 Units/Tube
Pin assignment is for Dual−in−Line Package.
For PLCC pin assignment, see TND309, the Pin Conversion Tables,
page 9.
Figure 2. Dip Pin Assignment
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure,
BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
August, 2016
Rev. 11
1
Publication Order Number:
MC10H116/D
MC10H116
Table 1. MAXIMUM RATINGS
Symbol
V
EE
V
I
I
out
Power Supply (V
CC
= 0)
Input Voltage (V
CC
= 0)
Output Current
Continuous
Surge
Operating Temperature Range
Storage Temperature Range
Plastic
Ceramic
Characteristic
Rating
−8.0
to 0
0 to V
EE
50
100
0 to +75
−55
to +150
−55
to +165
Unit
Vdc
Vdc
mA
T
A
T
stg
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. ELECTRICAL CHARACTERISTICS
(V
EE
=
−5.2
V
±5%)
(Note 2)
Symbol
I
E
I
inH
I
CBO
V
BB
V
OH
V
OL
V
IH
V
IL
V
CMR
V
PP
Characteristic
Power Supply Current
Input Current High
Input Leakage Current
Reference Voltage
High Output Voltage
Low Output Voltage
High Input Voltage (Note 1)
Low Input Voltage (Note 1)
Common Mode
Range (Note 4)
Min
−1.38
−1.02
−1.95
−1.17
−1.95
Max
23
150
1.5
−1.27
−0.84
−1.63
−0.84
−1.48
Min
−1.35
−0.98
−1.95
−1.13
−1.95
25°
Max
21
95
1.0
−1.25
−0.81
−1.63
−0.81
−1.48
Min
−1.31
−0.92
−1.95
−1.07
−1.95
75°
Max
23
95
1.0
−1.19
−0.735
−1.60
−0.735
−1.45
Unit
mA
mA
mA
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mV
PP
−2.85
to
−0.8
150 typ
Input Sensitivity (Note 3)
1. When V
BB
is used as the reference voltage.
2. Each MECL 10H™ series circuit has been designed to meet the specifications shown in the test table, after thermal equilibrium has been
established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.
Outputs are terminated through a 50 ohm resistor to
−2.0
V.
3. Differential input not to exceed 1.0 Vdc.
4. 150 mV
p−p
differential input required to obtain full logic swing on output.
Table 3. AC CHARACTERISTICS
Symbol
t
pd
t
r
t
f
Propagation Delay
Rise Time
Fall Time
Characteristic
Min
0.4
0.5
0.5
Max
1.3
1.5
1.5
Min
0.4
0.5
0.5
25°
Max
1.3
1.6
1.6
Min
0.45
0.5
0.5
75°
Max
1.45
1.7
1.7
Unit
ns
ns
ns
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
www.onsemi.com
2
MC10H116
PACKAGE DIMENSIONS
20 LEAD PLLC
CASE 775−02
ISSUE F
B
−N−
Y BRK
D
−L−
−M−
W
D
V
Z
0.007 (0.180)
U
M
T L-M
M
S
N
S
S
0.007 (0.180)
T L-M
N
S
20
1
X
VIEW D−D
G1
0.010 (0.250)
S
T L-M
S
N
S
A
Z
R
0.007 (0.180)
0.007 (0.180)
M
T L-M
T L-M
S
N
N
S
M
S
S
H
K1
0.007 (0.180)
M
T L-M
S
N
S
C
E
0.004 (0.100)
G
G1
0.010 (0.250)
S
T L-M
J
−T−
VIEW S
S
SEATING
PLANE
K
F
VIEW S
0.007 (0.180)
M
T L-M
S
N
S
N
S
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M,
1982.
2. DIMENSIONS IN INCHES.
3. DATUMS
−L−, −M−,
AND
−N−
DETERMINED WHERE TOP
OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD
PARTING LINE.
4. DIMENSION G1, TRUE POSITION TO BE MEASURED AT
DATUM
−T−,
SEATING PLANE.
5. DIMENSIONS R AND U DO NOT INCLUDE MOLD FLASH.
ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE.
6. DIMENSIONS IN THE PACKAGE TOP MAY BE SMALLER
THAN THE PACKAGE BOTTOM BY UP TO 0.012 (0.300).
DIMENSIONS R AND U ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE
BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY
MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION
TO BE GREATER THAN 0.037 (0.940). THE DAMBAR
INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO
BE SMALLER THAN 0.025 (0.635).
DIM
A
B
C
E
F
G
H
J
K
R
U
V
W
X
Y
Z
G1
K1
INCHES
MIN
MAX
0.385
0.395
0.385
0.395
0.165
0.180
0.090
0.110
0.013
0.021
0.050 BSC
0.026
0.032
0.020
−−−
0.025
−−−
0.350
0.356
0.350
0.356
0.042
0.048
0.042
0.048
0.042
0.056
−−−
0.020
2
_
10
_
0.310
0.330
0.040
−−−
MILLIMETERS
MIN
MAX
9.78
10.03
9.78
10.03
4.20
4.57
2.29
2.79
0.33
0.53
1.27 BSC
0.66
0.81
0.51
−−−
0.64
−−−
8.89
9.04
8.89
9.04
1.07
1.21
1.07
1.21
1.07
1.42
−−−
0.50
2
_
10
_
7.88
8.38
1.02
−−−
www.onsemi.com
3
MC10H116
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
_
7
_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0
_
7
_
0.229
0.244
0.010
0.019
16
9
−B−
1
8
P
8 PL
0.25 (0.010)
M
B
S
G
F
K
C
−T−
SEATING
PLANE
R
X 45
_
M
D
16 PL
M
J
0.25 (0.010)
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOLDERING FOOTPRINT
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
16X
EMITTER, #4
0.58
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
6.40
16X
8X
1.12
16
1
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free
strategy and soldering details, please
download the ON Semiconductor Soldering
and Mounting Techniques Reference Man-
ual,
SOLDERRM/D.
www.onsemi.com
4
MC10H116
PACKAGE DIMENSIONS
PDIP−16
CASE 648−08
ISSUE V
D
16
9
A
H
E1
E
1
NOTE 8
b2
TOP VIEW
8
B
A2
A
L
c
WITH LEADS CONSTRAINED
NOTE 5
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
DIM
A
A1
A2
b
b2
C
D
D1
E
E1
e
eB
L
M
INCHES
MIN
MAX
−−−−
0.210
0.015
−−−−
0.115 0.195
0.014 0.022
0.060 TYP
0.008 0.014
0.735 0.775
0.005
−−−−
0.300 0.325
0.240 0.280
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
10
°
MILLIMETERS
MIN
MAX
−−−
5.33
0.38
−−−
2.92
4.95
0.35
0.56
1.52 TYP
0.20
0.36
18.67 19.69
0.13
−−−
7.62
8.26
6.10
7.11
2.54 BSC
−−−
10.92
2.92
3.81
−−−
10
°
e/2
NOTE 3
A1
D1
e
SIDE VIEW
16X
b
C
SEATING
PLANE
M
eB
END VIEW
0.010
M
C A
M
B
M
NOTE 6
STYLE 1:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
STYLE 2:
PIN 1. COMMON DRAIN
2. COMMON DRAIN
3. COMMON DRAIN
4. COMMON DRAIN
5. COMMON DRAIN
6. COMMON DRAIN
7. COMMON DRAIN
8. COMMON DRAIN
9. GATE
10. SOURCE
11. GATE
12. SOURCE
13. GATE
14. SOURCE
15. GATE
16. SOURCE
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MC10H116/D
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参数对比
与MC10H116MEL相近的元器件有:MC10H116_06、MC10H116MG、MC10H116MELG、MC10H116M、MC10H116。描述及对比如下:
型号 MC10H116MEL MC10H116_06 MC10H116MG MC10H116MELG MC10H116M MC10H116
描述 TRIPLE LINE RECEIVER, PDIP16 TRIPLE LINE RECEIVER, PDIP16 TRIPLE LINE RECEIVER, PDIP16 TRIPLE LINE RECEIVER, PDIP16 TRIPLE LINE RECEIVER, PDIP16 TRIPLE LINE RECEIVER, PDIP16
差分输出 YES Yes YES YES YES Yes
输入特性 DIFFERENTIAL 微分 DIFFERENTIAL DIFFERENTIAL DIFFERENTIAL 微分
接口标准 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
功能数量 3 3 3 3 3 3
端子数量 16 16 16 16 16 16
接收器位数 3 3 3 3 3 3
温度等级 COMMERCIAL EXTENDED COMMERCIAL EXTENDED COMMERCIAL EXTENDED COMMERCIAL EXTENDED COMMERCIAL EXTENDED COMMERCIAL EXTENDED
端子形式 GULL WING THROUGH-孔 GULL WING GULL WING GULL WING THROUGH-孔
端子位置 DUAL DUAL DUAL DUAL
是否Rohs认证 符合 - 符合 符合 符合 -
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) -
零件包装代码 SOIC - SOIC SOIC SOIC -
包装说明 EIAJ, SO-16 - LEAD FREE, EIAJ, SO-16 LEAD FREE, EIAJ, SO-16 EIAJ, SO-16 -
针数 16 - 16 16 16 -
Reach Compliance Code unknow - unknow unknow unknow -
ECCN代码 EAR99 - EAR99 EAR99 EAR99 -
接口集成电路类型 LINE RECEIVER - LINE RECEIVER LINE RECEIVER LINE RECEIVER -
JESD-30 代码 R-PDSO-G16 - R-PDSO-G16 R-PDSO-G16 R-PDSO-G16 -
JESD-609代码 e4 - e4 e4 e4 -
长度 10.2 mm - 10.2 mm 10.2 mm 10.2 mm -
标称负供电电压 -5.2 V - -5.2 V -5.2 V -5.2 V -
最高工作温度 75 °C - 75 °C 75 °C 75 °C -
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 SOP - SOP SOP SOP -
封装等效代码 SOP16,.3 - SOP16,.3 SOP16,.3 SOP16,.3 -
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
峰值回流温度(摄氏度) NOT SPECIFIED - 260 260 NOT SPECIFIED -
电源 -5.2 V - -5.2 V -5.2 V -5.2 V -
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified -
最大接收延迟 1.3 ns - 1.3 ns 1.3 ns 1.3 ns -
座面最大高度 2.05 mm - 2.05 mm 2.05 mm 2.05 mm -
最大压摆率 23 mA - 23 mA 23 mA 23 mA -
表面贴装 YES - YES YES YES -
技术 ECL - ECL ECL ECL -
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) -
端子节距 1.27 mm - 1.27 mm 1.27 mm 1.27 mm -
处于峰值回流温度下的最长时间 NOT SPECIFIED - 40 40 NOT SPECIFIED -
宽度 5.275 mm - 5.275 mm 5.275 mm 5.275 mm -
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