Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MBC13917
Rev. 1.0, 12/2010
MBC13917
MBC13917
General Purpose SiGe:C RF
Cascode Low Noise Amplifier
Device
Package Information
Plastic Package: MLPD-6
1.5 mm x 2.0 mm
Case: 2129-01
Ordering Information
Device Marking or
Operating
Temperature Range
917
Package
MLPD-6
MBC13917EP
1
Introduction
Contents
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Electrical Characteristics . . . . . . . . . . . . . . . . . .3
Scattering and Noise Parameters . . . . . . . . . . . .6
Application Circuits . . . . . . . . . . . . . . . . . . . . . .24
Printed Circuit Board and Bill of Materials . . .33
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Product Documentation . . . . . . . . . . . . . . . . . . .38
Revision History . . . . . . . . . . . . . . . . . . . . . . . . .38
The MBC13917 is a cost-effective, high isolation
amplifier fabricated with an advanced RF BiCMOS
process using the SiGe:C module. This is the leadless
package version of the MBC13916 device.
The MBC13917 is designed for a wide range of general
purpose RF applications and has excellent high
frequency gain and noise figure. On-chip bias circuitry
sets the bias point while matching is accomplished
off-chip, affording the maximum in application
flexibility.
1.1
Features
The MBC13917 has the following features:
• Usable frequency range = 100 MHz to 2500 MHz
• 27 dB typical gain at 434 MHz, Vcc = 2.7V
• NF
min
(device level) = 0.95 dB @ 434 MHz
• NF
min
(device level) = 0.95 dB @ 900 MHz
• 6.5 dBm typical output power at -10 dBm Pin at
900 MHz, Vcc = 2.7V
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.
Introduction
•
•
•
•
•
46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V
4.7 mA typical bias current at Vcc = 2.7V
2.7V to 3.3V supply
Industry standard MLPD-6 leadless package
Available only in tape and reel packaging
1.2
Applications
Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage controlled oscillators (VCOs)
• Low power amplifiers
• Gain block in RF end products
• Smart metering
• Industrial—scientific and medical (ISM)
• Consumer—WLAN, 802.11 b/g
• Auto—TPMS, RKE, GPS, active antennas, wireless security
Figure 1
shows a simplified block diagram of the MBC13917 with the pinouts and location of the Pin 1
designator on the package.
RF IN
1
6
Gnd B
Gnd A
2
5
RF OUT
NC
3
4
NC
Figure 1. Functional Block Diagram
MBC13917 Advance Information, Rev. 1.0
2
Freescale Semiconductor
Electrical Characteristics
2
Electrical Characteristics
Table 1. Recommended Operating Conditions
Characteristic
RF Frequency
Supply Voltage
Symbol
f
RF
V
CC
Min
100
2.1
Typ
—
2.7
Max
2500
3.3
Unit
MHz
Vdc
Table 1
lists the recommended operating conditions of the MBC13917 device.
Table 2.
lists the maximum ratings for the device.
Table 2. Maximum Ratings (T
A
= 25
°
C, unless otherwise noted)
Rating
Supply Voltage
RF Input Power
Power Dissipation
Supply Current
Thermal Resistance, Junction to Case
Storage Temperature Range
Operating Ambient Temperature Range
Operating Case Temperature
Symbol
V
CC
P
RF
P
DIS
I
cc
R
θJC
T
stg
T
A
T
c
Value
3.5
10
100
20
400
-65 to 150
-40 to 85
-40 to 100
Unit
Vdc
dBm
mW
mA
°C/W
°C
°C
°C
Note:
Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical
Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤550
V and Machine Model (MM)
≤50
V. Additional
ESD data is available upon request.
Table 3
lists electrical characteristics associated with noise performance measured in a 50
Ω
system.
Additional noise parameters are listed in
Table 9.
Table 3. Device Level Characteristics
(Vcc = 2.7V, T
A
= 25
°
C, measured in S-parameter test fixture, unless otherwise noted)
Characteristic
Insertion Gain
f= 350 MHz
f= 430 MHz
f= 900 MHz
f= 1900 MHz
|S21|
See note below
Symbol
Min
Typ
Max
Unit
21.7
21.4
18.7
12.6
23.7
23.4
20.7
14.6
—
—
—
—
dB
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
3
Electrical Characteristics
Table 3. Device Level Characteristics (continued)
(Vcc = 2.7V, T
A
= 25
°
C, measured in S-parameter test fixture, unless otherwise noted)
Characteristic
Maximum Stable Gain and Maximum Available Gain
(Note1)
f= 350 MHz
f= 430 MHZ
f= 900 MHz
f= 1900 MHZ
Minimum Noise Figure
f= 350 MHz
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
Output Third Order Intercept
f= 350 MHz
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
Reverse Isolation
f= 350 MHz
f= 430 MHZ
f= 900 MHz
f= 1900 MHz
S12
-49
-48
-42
-40
-53
-52
-46
-44
—
—
—
—
dB
OIP3
7.7
8.3
11.3
11.6
9.7
10.3
13.3
13.6
—
—
—
—
dBm
NF
min
—
—
—
—
1.0
0.95
0.95
1.5
1.35
1.30
1.30
1.85
dB
MSG, MAG
34
33.2
26.5
15
36.4
35.6
28.9
17.6
—
—
—
—
dB
Symbol
Min
Typ
Max
Unit
Note:
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
if K>1, MAG=|S21/S12(K
±SqRt(K2-1)|
if K<1, MSG=|S21/S12|
Table 4
lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies. Further details on the application circuits are shown in
Section 4, “Application Circuits”
and
details on the boards are shown in
Section 5, “Printed Circuit Board and Bill of Materials.”
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits
(Vcc = 2.7V, T
A
= 25°C unless otherwise noted)
Characteristic
350 MHz (see
Figure 16)
Supply Current
RF Gain
Icc
G
—
26.6
4.7
27.7
5.6
—
mA
dB
Symbol
Min
Typ
Max
Unit
MBC13917 Advance Information, Rev. 1.0
4
Freescale Semiconductor
Electrical Characteristics
Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)
(Vcc = 2.7V, T
A
= 25°C unless otherwise noted)
Characteristic
Noise Figure
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Input Return Loss
Small Signal Gain
Reverse Isolation
Output Return Loss
370 MHz (see
Figure 16)
Supply Current
RF Gain
Noise Figure
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Input Return Loss
Small Signal Gain
Reverse Isolation
Output Return Loss
434 MHz (see
Figure 17)
Supply Current
RF Gain
Noise Figure
Output 3rd Order Intercept Point
Power Output at 1 dB Gain Compression
Input Return Loss
Small Signal Gain
Reverse Isolation
Output Return Loss
900 MHz (see
Figure 18)
Supply Current
RF Gain
Noise Figure
Icc
G
NF
—
22.5
—
4.7
24
1.19
5.6
—
1.5
mA
dB
dB
Icc
G
NF
OIP3
P1
dBoutput
S11
S21
S12
S22
—
26
—
9.5
1
—
26
—
—
4.7
27
2.3
10.9
2.2
-15
27
-46
-19
5.6
—
2.65
—
—
-10
—
-45
-16
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
Icc
G
NF
OIP3
P1
dBoutput
S11
S21
S12
S22
—
27.5
—
9.2
0.7
—
27
—
—
4.7
28.6
2.2
10.7
2.2
-12
28.5
-47
-12
5.6
—
2.6
—
—
-10
—
-46
-10
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
Symbol
NF
OIP3
P1
dBoutput
S11
S21
S12
S22
Min
—
8.0
-1
—
26
—
—
Typ
2.1
9.5
1
-8
27
-47
-9
Max
2.5
—
—
-7
—
-46
-7.5
Unit
dB
dBm
dBm
dB
dB
dB
dB
MBC13917 Advance Information, Rev. 1.0
Freescale Semiconductor
5
