MC33201, MC33202,
MC33204, NCV33201,
NCV33202, NCV33204
Low Voltage, Rail-to-Rail
Operational Amplifiers
The MC33201/2/4 family of operational amplifiers provide
rail−to−rail operation on both the input and output. The inputs can be
driven as high as 200 mV beyond the supply rails without phase
reversal on the outputs, and the output can swing within 50 mV of each
rail. This rail−to−rail operation enables the user to make full use of the
supply voltage range available. It is designed to work at very low
supply voltages (± 0.9 V) yet can operate with a supply of up to +12 V
and ground. Output current boosting techniques provide a high output
current capability while keeping the drain current of the amplifier to a
minimum. Also, the combination of low noise and distortion with a
high slew rate and drive capability make this an ideal amplifier for
audio applications.
Features
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PDIP−8
P, VP SUFFIX
CASE 626
1
SOIC−8
D, VD SUFFIX
CASE 751
8
8
1
•
Low Voltage, Single Supply Operation
•
•
•
•
•
•
•
•
•
•
8
(+1.8 V and Ground to +12 V and Ground)
Input Voltage Range Includes both Supply Rails
Output Voltage Swings within 50 mV of both Rails
No Phase Reversal on the Output for Over−driven Input Signals
High Output Current (I
SC
= 80 mA, Typ)
Low Supply Current (I
D
= 0.9 mA, Typ)
600
W
Output Drive Capability
Extended Operating Temperature Ranges
(−40° to +105°C and
−55°
to +125°C)
Typical Gain Bandwidth Product = 2.2 MHz
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
Micro8]
DM SUFFIX
CASE 846A
PDIP−14
P, VP SUFFIX
CASE 646
14
1
SOIC−14
D, VD SUFFIX
CASE 751A
14
1
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 11 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
July, 2018
−
Rev. 18
1
Publication Order Number:
MC33201/D
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PIN CONNECTIONS
MC33201
All Case Styles
NC 1
2
Inputs
3
V
EE
4
6
5
Output
NC
Inputs 2
8
7
NC
V
CC
Output 1 1
2
Inputs 1
3
1
4
MC33204
All Case Styles
14 Output 4
13
12
11
10
2
3
Inputs 4
V
EE
Inputs 3
Output 3
V
CC
4
5
6
(Top View)
MC33202
All Case Styles
Output 1 1
2
Inputs 1
3
V
EE
4
2
1
9
8
Output 2 7
(Top View)
V
CC
Output 2
8
7
6
Inputs 2
5
(Top View)
V
CC
V
CC
V
CC
V
in -
V
EE
V
out
V
in +
V
CC
V
EE
This device contains 70 active transistors (each amplifier).
Figure 1. Circuit Schematic
(Each Amplifier)
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2
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to V
EE
)
Input Differential Voltage Range
Common Mode Input Voltage Range (Note 2)
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
Maximum Power Dissipation
Symbol
V
S
V
IDR
V
CM
t
s
T
J
T
stg
P
D
Value
+13
Note 1
V
CC
+ 0.5 V to
V
EE
−
0.5 V
Note 3
+150
−
65 to +150
Note 3
Unit
V
V
V
sec
°C
°C
mW
DC ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Input Offset Voltage
V
IO (max)
MC33201, NCV33201V
MC33202, NCV33202, V
MC33204, NCV33204, V
Output Voltage Swing
V
OH
(R
L
= 10 kW)
V
OL
(R
L
= 10 kW)
Power Supply Current
per Amplifier (I
D
)
V
CC
= 2.0 V
V
CC
= 3.3 V
V
CC
= 5.0 V
Unit
mV
±
8.0
±10
±12
1.9
0.10
1.125
±
8.0
±10
±12
3.15
0.15
1.125
±
6.0
±
8.0
±10
4.85
0.15
1.125
V
min
V
max
mA
Specifications at V
CC
= 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. V
EE
= GND.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Input Offset Voltage (V
CM
0 V to 0.5 V, V
CM
1.0 V to 5.0 V)
MC33201/NCV33201V:
T
A
= + 25°C
MC33201:
T
A
=
−
40° to +105°C
MC33201V/NCV33201V: T
A
=
−
55° to +125°C
MC33202/NCV33202, V:
T
A
= + 25°C
MC33202/NCV33202:
T
A
=
−
40° to +105°C
MC33202V/NCV33202V: T
A
=
−
55° to +125°C (Note 4)
MC33204/NCV33204V:
T
A
= + 25°C
MC33204:
T
A
=
−
40° to +105°C
MC33204V/NCV33204V: T
A
=
−
55° to +125°C (Note 4)
Input Offset Voltage Temperature Coefficient (R
S
= 50
W)
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Input Bias Current (V
CM
= 0 V to 0.5 V, V
CM
= 1.0 V to 5.0 V)
T
A
= + 25°C
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Figure
3
Symbol
⎮V
IO
⎮
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
2.0
2.0
80
100
−
Max
6.0
9.0
13
8.0
11
14
10
13
17
−
−
200
250
500
mV/°C
Unit
mV
4
DV
IO
/DT
5, 6
⎮I
IB
⎮
nA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage
range, use current limiting resistors in series with the input pins.
2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage
on either input must not exceed either supply rail by more than 500 mV.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded. (See Figure 2)
4.
All NCV devices are qualified for Automotive use.
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3
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
DC ELECTRICAL CHARACTERISTICS (cont.)
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Input Offset Current (V
CM
= 0 V to 0.5 V, V
CM
= 1.0 V to 5.0 V)
T
A
= + 25°C
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Common Mode Input Voltage Range
Large Signal Voltage Gain (V
CC
= + 5.0 V, V
EE
=
−
5.0 V)
R
L
= 10 kW
R
L
= 600
W
Output Voltage Swing (V
ID
=
±
0.2 V)
R
L
= 10 kW
R
L
= 10 kW
R
L
= 600
W
R
L
= 600
W
Common Mode Rejection (V
in
= 0 V to 5.0 V)
Power Supply Rejection Ratio
V
CC
/V
EE
= 5.0 V/GND to 3.0 V/GND
Output Short Circuit Current (Source and Sink)
Power Supply Current per Amplifier (V
O
= 0 V)
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Figure
−
Symbol
⎮I
IO
⎮
Min
−
−
−
V
EE
50
25
4.85
−
4.75
−
60
500
13, 14
15
I
SC
I
D
50
−
−
Typ
5.0
10
−
−
300
250
4.95
0.05
4.85
0.15
90
25
80
0.9
0.9
Max
50
100
200
V
CC
−
−
V
V
OH
V
OL
V
OH
V
OL
11
12
CMR
PSRR
−
−
1.125
1.125
−
0.15
−
0.25
−
dB
mV/V
mA
mA
V
kV/V
Unit
nA
−
7
V
ICR
A
VOL
8, 9, 10
AC ELECTRICAL CHARACTERISTICS
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Slew Rate
(V
S
=
±
2.5 V, V
O
=
−
2.0 V to + 2.0 V, R
L
= 2.0 kW, A
V
= +1.0)
Gain Bandwidth Product (f = 100 kHz)
Gain Margin (R
L
= 600
W,
C
L
= 0 pF)
Phase Margin (R
L
= 600
W,
C
L
= 0 pF)
Channel Separation (f = 1.0 Hz to 20 kHz, A
V
= 100)
Power Bandwidth (V
O
= 4.0 V
pp
, R
L
= 600
W,
THD
≤
1 %)
Total Harmonic Distortion (R
L
= 600
W,
V
O
= 1.0 V
pp
, A
V
= 1.0)
f = 1.0 kHz
f = 10 kHz
Open Loop Output Impedance
(V
O
= 0 V, f = 2.0 MHz, A
V
= 10)
Differential Input Resistance (V
CM
= 0 V)
Differential Input Capacitance (V
CM
= 0 V)
Equivalent Input Noise Voltage (R
S
= 100
W)
f = 10 Hz
f = 1.0 kHz
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
25
24
Figure
16, 26
17
20, 21, 22
20, 21, 22
23
Symbol
SR
0.5
GBW
A
M
O
M
CS
BW
P
THD
−
−
⎮Z
O
⎮
R
in
C
in
e
n
−
−
−
−
−
−
−
0.002
0.008
100
200
8.0
25
20
0.8
0.2
−
−
−
−
−
−
−
−
−
W
kW
pF
nV/
Hz
pA/
Hz
−
−
−
−
−
1.0
2.2
12
65
90
28
−
−
−
−
−
−
MHz
dB
Deg
dB
kHz
%
Min
Typ
Max
Unit
V/ms
25
i
n
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MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PD(max) , MAXIMUM POWER DISSIPATION (mW)
2500
8 and 14 Pin DIP Pkg
2000
1500
1000
500
SOIC-8
Pkg
TSSOP-14 Pkg
SO-14 Pkg
PERCENTAGE OF AMPLIFIERS (%)
40
35
30
25
20
15
10
5.0
0
-10 - 8.0 - 6.0 - 4.0 - 2.0
0
2.0 4.0 6.0
V
IO
, INPUT OFFSET VOLTAGE (mV)
8.0
10
360 amplifiers tested from
3 (MC33204) wafer lots
V
CC
= + 5.0 V
V
EE
= Gnd
T
A
= 25°C
DIP Package
0
- 55 - 40 - 25
0
25
50
85
T
A
, AMBIENT TEMPERATURE (°C)
125
Figure 2. Maximum Power Dissipation
versus Temperature
Figure 3. Input Offset Voltage Distribution
50
40
PERCENTAGE OF AMPLIFIERS (%)
30
20
10
0
- 50 - 40 - 30 - 20
360 amplifiers tested from
3 (MC33204) wafer lots
V
CC
= + 5.0 V
V
EE
= Gnd
T
A
= 25°C
DIP Package
200
I IB , INPUT BIAS CURRENT (nA)
V
CC
= + 5.0 V
V
EE
= Gnd
160
120
80
V
CM
> 1.0 V
40
0
- 55 - 40 - 25
V
CM
= 0 V to 0.5 V
-10
0
10
20
30
40
50
0
25
70
85
125
TC
V
, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (
m
V/
°
C)
IO
T
A
, AMBIENT TEMPERATURE (°C)
Figure 4. Input Offset Voltage
Temperature Coefficient Distribution
Figure 5. Input Bias Current
versus Temperature
A VOL , OPEN LOOP VOLTAGE GAIN (kV/V)
150
I IB , INPUT BIAS CURRENT (nA)
100
50
0
- 50
-100
-150
- 200
- 250
0
V
CC
= 12 V
V
EE
= Gnd
T
A
= 25°C
2.0
4.0
6.0
8.0
10
V
CM
, INPUT COMMON MODE VOLTAGE (V)
12
300
260
220
180
140
V
CC
= + 5.0 V
V
EE
= Gnd
R
L
= 600
W
DV
O
= 0.5 V to 4.5 V
0
25
70
85
T
A
, AMBIENT TEMPERATURE (°C)
105
125
100
- 55 - 40 - 25
Figure 6. Input Bias Current
versus Common Mode Voltage
Figure 7. Open Loop Voltage Gain versus
Temperature
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