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MC33202PG

Operational Amplifiers - Op Amps 1.8-12V Dual Rail to Rail -40 to 105 Cel

器件类别：模拟混合信号IC    放大器电路   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

器件标准：

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
DIP
包装说明
LEAD FREE, PLASTIC, DIP-8
针数
8
制造商包装代码
626-05
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.25 µA
25C 时的最大偏置电流 (IIB)
0.2 µA
标称共模抑制比
90 dB
频率补偿
YES
最大输入失调电压
11000 µV
JESD-30 代码
R-PDIP-T8
JESD-609代码
e3
长度
9.27 mm
低-失调
NO
功能数量
2
端子数量
8
最高工作温度
105 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
包装方法
RAIL
峰值回流温度（摄氏度）
260
电源
5 V
认证状态
Not Qualified
座面最大高度
5.33 mm
最小摆率
0.5 V/us
标称压摆率
1 V/us
最大压摆率
2.25 mA
供电电压上限
13 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
BIPOLAR
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn) - annealed
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称均一增益带宽
2200 kHz
最小电压增益
25000
宽度
7.62 mm
文档预览
MC33201, MC33202,
MC33204, NCV33202,
NCV33204
Low Voltage, Rail-to-Rail
Operational Amplifiers
The MC33201/2/4 family of operational amplifiers provide
rail−to−rail operation on both the input and output. The inputs can be
driven as high as 200 mV beyond the supply rails without phase
reversal on the outputs, and the output can swing within 50 mV of each
rail. This rail−to−rail operation enables the user to make full use of the
supply voltage range available. It is designed to work at very low
supply voltages (± 0.9 V) yet can operate with a supply of up to +12 V
and ground. Output current boosting techniques provide a high output
current capability while keeping the drain current of the amplifier to a
minimum. Also, the combination of low noise and distortion with a
high slew rate and drive capability make this an ideal amplifier for
audio applications.
Features
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PDIP−8
P, VP SUFFIX
CASE 626
1
SOIC−8
D, VD SUFFIX
CASE 751
8
8
1
•
Low Voltage, Single Supply Operation
•
•
•
•
•
•
•
•
•
•
8
1
Micro8]
DM SUFFIX
CASE 846A
(+1.8 V and Ground to +12 V and Ground)
Input Voltage Range Includes both Supply Rails
Output Voltage Swings within 50 mV of both Rails
No Phase Reversal on the Output for Over−driven Input Signals
High Output Current (I
SC
= 80 mA, Typ)
Low Supply Current (I
D
= 0.9 mA, Typ)
600
W
Output Drive Capability
Extended Operating Temperature Ranges
(−40° to +105°C and
−55°
to +125°C)
Typical Gain Bandwidth Product = 2.2 MHz
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages are Available
PDIP−14
P, VP SUFFIX
CASE 646
14
1
SOIC−14
D, VD SUFFIX
CASE 751A
14
1
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 12 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
December, 2011
−
Rev. 16
1
Publication Order Number:
MC33201/D
MC33201, MC33202, MC33204, NCV33202, NCV33204
PIN CONNECTIONS
MC33201
All Case Styles
NC 1
2
Inputs
3
V
EE
4
6
5
Output
NC
Inputs 2
8
7
NC
V
CC
Output 1 1
2
Inputs 1
3
1
4
MC33204
All Case Styles
14 Output 4
13
12
11
10
2
3
Inputs 4
V
EE
Inputs 3
Output 3
V
CC
4
5
6
(Top View)
MC33202
All Case Styles
Output 1 1
2
Inputs 1
3
V
EE
4
2
1
9
8
Output 2 7
(Top View)
V
CC
Output 2
8
7
6
Inputs 2
5
(Top View)
V
CC
V
CC
V
CC
V
in -
V
EE
V
out
V
in +
V
CC
V
EE
This device contains 70 active transistors (each amplifier).
Figure 1. Circuit Schematic
(Each Amplifier)
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2
MC33201, MC33202, MC33204, NCV33202, NCV33204
MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to V
EE
)
Input Differential Voltage Range
Common Mode Input Voltage Range (Note 2)
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
Maximum Power Dissipation
Symbol
V
S
V
IDR
V
CM
t
s
T
J
T
stg
P
D
Value
+13
Note 1
V
CC
+ 0.5 V to
V
EE
−
0.5 V
Note 3
+150
−
65 to +150
Note 3
Unit
V
V
V
sec
°C
°C
mW
DC ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Input Offset Voltage
V
IO (max)
MC33201
MC33202, NCV33202
MC33204, NCV33204
Output Voltage Swing
V
OH
(R
L
= 10 kW)
V
OL
(R
L
= 10 kW)
Power Supply Current
per Amplifier (I
D
)
V
CC
= 2.0 V
V
CC
= 3.3 V
V
CC
= 5.0 V
Unit
mV
±
8.0
±10
±12
1.9
0.10
1.125
±
8.0
±10
±12
3.15
0.15
1.125
±
6.0
±
8.0
±10
4.85
0.15
1.125
V
min
V
max
mA
Specifications at V
CC
= 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. V
EE
= GND.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Input Offset Voltage (V
CM
0 V to 0.5 V, V
CM
1.0 V to 5.0 V)
MC33201:
T
A
= + 25°C
MC33201:
T
A
=
−
40° to +105°C
MC33201V:
T
A
=
−
55° to +125°C
MC33202/NCV33202: T
A
= + 25°C
MC33202/NCV33202: T
A
=
−
40° to +105°C
MC33202V:
T
A
=
−
55° to +125°C
NCV33202V:
T
A
=
−
55° to +125°C (Note 4)
MC33204:
T
A
= + 25°C
MC33204:
T
A
=
−
40° to +105°C
MC33204V:
T
A
=
−
55° to +125°C
NCV33204:
T
A
=
−
55° to +125°C
Input Offset Voltage Temperature Coefficient (R
S
= 50
W)
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Input Bias Current (V
CM
= 0 V to 0.5 V, V
CM
= 1.0 V to 5.0 V)
T
A
= + 25°C
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Figure
3
Symbol
⎮V
IO
⎮
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
2.0
2.0
80
100
−
Max
6.0
9.0
13
8.0
11
14
14
10
13
17
17
−
−
200
250
500
mV/°C
Unit
mV
4
DV
IO
/DT
5, 6
⎮I
IB
⎮
nA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage
range, use current limiting resistors in series with the input pins.
2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage
on either input must not exceed either supply rail by more than 500 mV.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded. (See Figure 2)
4.
All NCV devices are qualified for Automotive use.
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3
MC33201, MC33202, MC33204, NCV33202, NCV33204
DC ELECTRICAL CHARACTERISTICS (cont.)
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Input Offset Current (V
CM
= 0 V to 0.5 V, V
CM
= 1.0 V to 5.0 V)
T
A
= + 25°C
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Common Mode Input Voltage Range
Large Signal Voltage Gain (V
CC
= + 5.0 V, V
EE
=
−
5.0 V)
R
L
= 10 kW
R
L
= 600
W
Output Voltage Swing (V
ID
=
±
0.2 V)
R
L
= 10 kW
R
L
= 10 kW
R
L
= 600
W
R
L
= 600
W
Common Mode Rejection (V
in
= 0 V to 5.0 V)
Power Supply Rejection Ratio
V
CC
/V
EE
= 5.0 V/GND to 3.0 V/GND
Output Short Circuit Current (Source and Sink)
Power Supply Current per Amplifier (V
O
= 0 V)
T
A
=
−
40° to +105°C
T
A
=
−
55° to +125°C
Figure
−
Symbol
⎮I
IO
⎮
Min
−
−
−
V
EE
50
25
4.85
−
4.75
−
60
500
13, 14
15
I
SC
I
D
50
−
−
Typ
5.0
10
−
−
300
250
4.95
0.05
4.85
0.15
90
25
80
0.9
0.9
Max
50
100
200
V
CC
−
−
V
V
OH
V
OL
V
OH
V
OL
11
12
CMR
PSRR
−
−
1.125
1.125
−
0.15
−
0.25
−
dB
mV/V
mA
mA
V
kV/V
Unit
nA
−
7
V
ICR
A
VOL
8, 9, 10
AC ELECTRICAL CHARACTERISTICS
(V
CC
= + 5.0 V, V
EE
= Ground, T
A
= 25°C, unless otherwise noted.)
Characteristic
Slew Rate
(V
S
=
±
2.5 V, V
O
=
−
2.0 V to + 2.0 V, R
L
= 2.0 kW, A
V
= +1.0)
Gain Bandwidth Product (f = 100 kHz)
Gain Margin (R
L
= 600
W,
C
L
= 0 pF)
Phase Margin (R
L
= 600
W,
C
L
= 0 pF)
Channel Separation (f = 1.0 Hz to 20 kHz, A
V
= 100)
Power Bandwidth (V
O
= 4.0 V
pp
, R
L
= 600
W,
THD
≤
1 %)
Total Harmonic Distortion (R
L
= 600
W,
V
O
= 1.0 V
pp
, A
V
= 1.0)
f = 1.0 kHz
f = 10 kHz
Open Loop Output Impedance
(V
O
= 0 V, f = 2.0 MHz, A
V
= 10)
Differential Input Resistance (V
CM
= 0 V)
Differential Input Capacitance (V
CM
= 0 V)
Equivalent Input Noise Voltage (R
S
= 100
W)
f = 10 Hz
f = 1.0 kHz
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
25
24
Figure
16, 26
17
20, 21, 22
20, 21, 22
23
Symbol
SR
0.5
GBW
A
M
O
M
CS
BW
P
THD
−
−
⎮Z
O
⎮
R
in
C
in
e
n
−
−
−
−
−
−
−
0.002
0.008
100
200
8.0
25
20
0.8
0.2
−
−
−
−
−
−
−
−
−
W
kW
pF
nV/
Hz
pA/
Hz
−
−
−
−
−
1.0
2.2
12
65
90
28
−
−
−
−
−
−
MHz
dB
Deg
dB
kHz
%
Min
Typ
Max
Unit
V/ms
25
i
n
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4
MC33201, MC33202, MC33204, NCV33202, NCV33204
PD(max) , MAXIMUM POWER DISSIPATION (mW
2500
8 and 14 Pin DIP Pkg
2000
1500
1000
500
SOIC-8
Pkg
TSSOP-14 Pkg
SO-14 Pkg
PERCENTAGE OF AMPLIFIERS (%)
40
35
30
25
20
15
10
5.0
0
-10 - 8.0 - 6.0 - 4.0 - 2.0
0
2.0 4.0 6.0
V
IO
, INPUT OFFSET VOLTAGE (mV)
8.0
10
360 amplifiers tested from
3 (MC33204) wafer lots
V
CC
= + 5.0 V
V
EE
= Gnd
T
A
= 25°C
DIP Package
0
- 55 - 40 - 25
0
25
50
85
T
A
, AMBIENT TEMPERATURE (°C)
125
Figure 2. Maximum Power Dissipation
versus Temperature
Figure 3. Input Offset Voltage Distribution
50
40
PERCENTAGE OF AMPLIFIERS (%)
30
20
10
0
- 50 - 40 - 30 - 20
360 amplifiers tested from
3 (MC33204) wafer lots
V
CC
= + 5.0 V
V
EE
= Gnd
T
A
= 25°C
DIP Package
200
I IB , INPUT BIAS CURRENT (nA)
V
CC
= + 5.0 V
V
EE
= Gnd
160
120
80
V
CM
> 1.0 V
40
0
- 55 - 40 - 25
V
CM
= 0 V to 0.5 V
-10
0
10
20
30
40
50
0
25
70
85
125
TC
V
, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (
m
V/
°
C)
IO
T
A
, AMBIENT TEMPERATURE (°C)
Figure 4. Input Offset Voltage
Temperature Coefficient Distribution
Figure 5. Input Bias Current
versus Temperature
A VOL , OPEN LOOP VOLTAGE GAIN (kV/V)
150
I IB , INPUT BIAS CURRENT (nA)
100
50
0
- 50
-100
-150
- 200
- 250
0
V
CC
= 12 V
V
EE
= Gnd
T
A
= 25°C
2.0
4.0
6.0
8.0
10
V
CM
, INPUT COMMON MODE VOLTAGE (V)
12
300
260
220
180
140
V
CC
= + 5.0 V
V
EE
= Gnd
R
L
= 600
W
DV
O
= 0.5 V to 4.5 V
0
25
70
85
T
A
, AMBIENT TEMPERATURE (°C)
105
125
100
- 55 - 40 - 25
Figure 6. Input Bias Current
versus Common Mode Voltage
Figure 7. Open Loop Voltage Gain versus
Temperature
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参数对比
与MC33202PG相近的元器件有：MC33204PG、MC33202D、MC33204VP、MC33201D、MC33202DMR2、MC33204DR2、MC33202VPG、MC33201P。描述及对比如下：
型号 MC33202PG MC33204PG MC33202D MC33204VP MC33201D MC33202DMR2 MC33204DR2 MC33202VPG MC33201P
描述 Operational Amplifiers - Op Amps 1.8-12V Dual Rail to Rail -40 to 105 Cel Operational Amplifiers - Op Amps 1.8-12V Quad Rail to Rail -40 to 105 Cel Operational Amplifiers - Op Amps 1.8-12V Dual Rail to Operational Amplifiers - Op Amps 1.8-12V Quad Rail to Operational Amplifiers - Op Amps 1.8-12V Sngl Rail to Operational Amplifiers - Op Amps 1.8-12V Dual Rail to Operational Amplifiers - Op Amps 1.8-12V Quad Rail to Operational Amplifiers - Op Amps 1.8-12V Dual Rail to Rail -55 to 125 Cel Operational Amplifiers - Op Amps 1.8-12V Sngl Rail to
零件包装代码 DIP DIP SOIC DIP SOIC SOIC SOIC DIP DIP
包装说明 LEAD FREE, PLASTIC, DIP-8 DIP, DIP14,.3 SOP, SOP8,.25 DIP, DIP14,.3 SOIC-8 MICRO-8 SOP, SOP14,.25 DIP, DIP8,.3 PLASTIC, DIP-8
针数 8 14 8 14 8 8 14 8 8
Reach Compliance Code unknown unknown not_compliant not_compliant not_compliant not_compliant not_compliant unknown not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.25 µA 0.25 µA 0.25 µA 0.5 µA 0.25 µA 0.25 µA 0.25 µA 0.5 µA 0.25 µA
25C 时的最大偏置电流 (IIB) 0.2 µA 0.2 µA 0.2 µA 0.2 µA 0.2 µA 0.2 µA 0.2 µA 0.2 µA 0.2 µA
标称共模抑制比 90 dB 90 dB 90 dB 90 dB 90 dB 90 dB 90 dB 90 dB 90 dB
频率补偿 YES YES YES YES YES YES YES YES YES
最大输入失调电压 11000 µV 13000 µV 8000 µV 17000 µV 9000 µV 8000 µV 13000 µV 14000 µV 9000 µV
JESD-30 代码 R-PDIP-T8 R-PDIP-T14 R-PDSO-G8 R-PDIP-T14 R-PDSO-G8 S-PDSO-G8 R-PDSO-G14 R-PDIP-T8 R-PDIP-T8
JESD-609代码 e3 e3 e0 e0 e0 e0 e0 e3 e0
长度 9.27 mm 18.86 mm 4.9 mm 18.48 mm 4.9 mm 3 mm 8.65 mm 9.27 mm 9.27 mm
低-失调 NO NO NO NO NO NO NO NO NO
功能数量 2 4 2 4 1 2 4 2 1
端子数量 8 14 8 14 8 8 14 8 8
最高工作温度 105 °C 105 °C 105 °C 125 °C 105 °C 105 °C 105 °C 125 °C 105 °C
最低工作温度 -40 °C -40 °C -40 °C -55 °C -40 °C -40 °C -40 °C -55 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP SOP DIP SOP TSSOP SOP DIP DIP
封装等效代码 DIP8,.3 DIP14,.3 SOP8,.25 DIP14,.3 SOP8,.25 TSSOP8,.19 SOP14,.25 DIP8,.3 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE IN-LINE IN-LINE
包装方法 RAIL RAIL RAIL RAIL RAIL TAPE AND REEL TAPE AND REEL RAIL RAIL
峰值回流温度（摄氏度） 260 260 240 NOT SPECIFIED NOT SPECIFIED 240 240 260 NOT SPECIFIED
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.33 mm 4.69 mm 1.75 mm 4.69 mm 1.75 mm 1.1 mm 1.75 mm 5.33 mm 5.33 mm
最小摆率 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us 0.5 V/us
标称压摆率 1 V/us 1 V/us 1 V/us 1 V/us 1 V/us 1 V/us 1 V/us 1 V/us 1 V/us
最大压摆率 2.25 mA 4.5 mA 2.25 mA 4.5 mA 1.125 mA 2.25 mA 4.5 mA 2.25 mA 1.125 mA
供电电压上限 13 V 13 V 13 V 13 V 13 V 13 V 13 V 13 V 13 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO NO YES NO YES YES YES NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL MILITARY INDUSTRIAL INDUSTRIAL INDUSTRIAL MILITARY INDUSTRIAL
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn80Pb20) Tin/Lead (Sn/Pb) Tin (Sn) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 1.27 mm 2.54 mm 1.27 mm 0.65 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 30 NOT SPECIFIED NOT SPECIFIED 30 30 40 NOT SPECIFIED
标称均一增益带宽 2200 kHz 2200 kHz 2200 kHz 2200 kHz 2200 kHz 2200 kHz 2200 kHz 2200 kHz 2200 kHz
最小电压增益 25000 25000 25000 25000 25000 25000 25000 25000 25000
宽度 7.62 mm 7.62 mm 3.9 mm 7.62 mm 3.9 mm 3 mm 3.9 mm 7.62 mm 7.62 mm
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 含铅 - 含铅 含铅 含铅 不含铅 含铅
是否Rohs认证 符合 - - 不符合 - 不符合 不符合 符合 -
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
制造商包装代码 626-05 646-06 751-07 - 751-07 846A-02 - 626-05 626-05
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器件捷径:
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