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MC33275DT-33

LDO Voltage Regulators 3.3V 300mA

器件类别:半导体    电源管理   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
LDO Voltage Regulators
RoHS
N
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TO-252-3
Output Voltage
3.3 V
Output Current
300 mA
Number of Outputs
1 Output
Polarity
Positive
Quiescent Current
2 mA
Input Voltage MAX
13 V
输出类型
Output Type
Fixed
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C
Load Regulation
25 mV
Dropout Voltage
0.025 V at 10 mA
系列
Packaging
Tube
高度
Height
2.38 mm (Max)
长度
Length
6.73 mm (Max)
宽度
Width
6.22 mm (Max)
Dropout Voltage - Max
100 mV at 10 mA
Voltage Regulation Accuracy
1 %
Ib - Input Bias Current
1.5 mA
Line Regulation
10 mV
NumOfPackaging
1
工厂包装数量
Factory Pack Quantity
75
单位重量
Unit Weight
0.012346 oz
文档预览
MC33275, NCV33275
300 mA, Low Dropout
Voltage Regulator
The MC33275 series are micropower low dropout voltage
regulators available in a wide variety of output voltages as well as
packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount
packages. These devices feature a very low quiescent current and are
capable of supplying output currents up to 300 mA. Internal current
and thermal limiting protection are provided by the presence of a short
circuit at the output and an internal thermal shutdown circuit.
Due to the low input−to−output voltage differential and bias current
specifications, these devices are ideally suited for battery powered
computer, consumer, and industrial equipment where an extension of
useful battery life is desirable.
Features
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LOW DROPOUT
MICROPOWER VOLTAGE
REGULATOR
MARKING
DIAGRAMS
4
1
3
SOT−223
ST SUFFIX
CASE 318E
1
8
8
1
SOIC−8
D SUFFIX
CASE 751
275xx
ALYWG
G
1
AYW
275xxG
G
Low Input−to−Output Voltage Differential of 25 mV at I
O
= 10 mA,
and 260 mV at I
O
= 300 mA
Extremely Tight Line and Load Regulation
Stable with Output Capacitance of only 0.33
mF
for 2.5 V Output
Voltage
Internal Current and Thermal Limiting
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Applications
4
1 2
Battery Powered Consumer Products
Hand−Held Instruments
Camcorders and Cameras
V
in
Thermal &
Anti−sat
Protection
Rint
1.23 V
V. Ref.
54 K
This device contains 41 active transistors
GND
V
out
3
DPAK
DT SUFFIX
CASE 369C
275xxG
ALYWW
1
DFN−8, 4x4
MN SUFFIX
CASE 488AF
1
275xx
ALYWG
G
xx
= Voltage Version
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W, WW = Work Week
G
or G = Pb−Free Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 10
of this data sheet.
Figure 1. Simplified Block Diagram
©
Semiconductor Components Industries, LLC, 2015
March, 2015
Rev. 20
1
Publication Order Number:
MC33275/D
MC33275, NCV33275
PIN CONNECTIONS
GND
4
GND
4
1
2
3
V
in
GND V
out
MC33275ST
1
2
3
GND V
V
in
out
MC33275DT
Pins 4 and 5 Not Connected
MC33275D
MC33275MN
MAXIMUM RATINGS
Rating
Input Voltage
Power Dissipation and Thermal Characteristics
T
A
= 25°C
Maximum Power Dissipation
Case 751 (SOIC−8) D Suffix
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 318E (SOT−223) ST Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 369A (DPAK−3) DT Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 488AF (DFN−8, 4x4) MN Suffix
Thermal Resistance, Junction−to−Air (with 1.0 oz PCB cu area)
Thermal Resistance, Junction−to−Air (with 1.8 oz PCB cu area)
Thermal Resistance, Junction−to−Case
Output Current
Maximum Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Symbol
V
CC
Value
13
Unit
Vdc
P
D
R
qJA
R
qJC
R
qJA
R
qJC
R
qJA
R
qJC
R
qJA
R
qJA
psi−JC*
I
O
T
J
T
A
T
stg
ESD
Internally Limited
160
25
245
15
92
6.0
183
93
9.0
300
150
40 to +125
65 to +150
4000
400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to
which it is attached.
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2
Ç
Ç
Ç
Ç
Ç
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
2
GND
3
GND
4
N/C
Input
1
8
Output
7
GND
6
GND
5
N/C
Input
Input
Input
N/C
1
2
3
4
8
7
6
5
Output
N/C
GND
N/C
W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
mA
°C
°C
°C
V
MC33275, NCV33275
ELECTRICAL CHARACTERISTICS
(C
L
= 1.0mF, T
A
= 25°C, for min/max values T
J
=
−40°C
to +125°C, Note 1)
Characteristic
Output Voltage
2.5 V Suffix
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
2.5 V Suffix
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
Line Regulation
Load Regulation
Dropout Voltage
I
O
= 10 mA
I
O
= 100 mA
I
O
= 250 mA
I
O
= 300 mA
I
O
= 0 mA to 250 mA
T
A
= 25°C, V
in
= [V
O
+ 1] V
Symbol
V
O
Min
2.475
2.970
3.267
4.950
2.450
2.940
3.234
4.900
Reg
line
Reg
load
V
in
V
O
Typ
2.50
3.00
3.30
5.00
2.0
5.0
Max
2.525
3.030
3.333
5.05
2.550
3.060
3.366
5.100
10
25
mV
mV
mV
65
25
115
220
260
75
160
46
100
200
400
500
dB
mVrms
Unit
Vdc
V
in
= [V
O
+ 1] V, 0 < I
O
< 100 mA
2% Tolerance from T
J
=
−40
to +125°C
V
in
= [V
O
+ 1] V to 12 V, I
O
= 250 mA,
All Suffixes T
A
= 25°C
V
in
= [V
O
+ 1] V, I
O
= 0 mA to 250 mA,
All Suffixes T
A
= 25°C
T
J
=
−40°C
to +125°C
Ripple Rejection (120 Hz)
V
in(peak−peak)
= [V
O
+ 1.5] V to [V
O
+ 5.5] V
V
n
Output Noise Voltage
C
L
= 1.0
mF
I
O
= 50 mA (10 Hz to 100 kHz)
C
L
= 200
mF
CURRENT PARAMETERS
Quiescent Current ON Mode
Quiescent Current ON Mode SAT
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
Current Limit
THERMAL SHUTDOWN
Thermal Shutdown
V
in
= [V
O
+ 1] V, I
O
= 0 mA
V
in
= [V
O
0.5] V, I
O
= 0 mA (Notes 2, 3)
I
QOn
I
QSAT
125
1500
1500
1500
450
200
2000
2000
2000
mA
mA
V
in
= [V
O
+ 1] V, V
O
Shorted
I
LIMIT
mA
150
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Quiescent Current is measured where the PNP pass transistor is in saturation. V
in
= [V
O
0.5] V guarantees this condition.
3. For 2.5 V version, I
QSAT
is constrained by the minimum input voltage of 2.5 V.
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3
MC33275, NCV33275
DEFINITIONS
Load Regulation
The change in output voltage for a
change in load current at constant chip temperature.
Dropout Voltage
The input/output differential at which
the regulator output no longer maintains regulation against
further reductions in input voltage. Measured when the
output drops 100 mV below its nominal value (which is
measured at 1.0 V differential), dropout voltage is affected
by junction temperature, load current and minimum input
supply requirements.
Output Noise Voltage
The RMS AC voltage at the
output with a constant load and no input ripple, measured
over a specified frequency range.
Maximum Power Dissipation
The maximum total
dissipation for which the regulator will operate within
specifications.
Quiescent Current
Current which is used to operate the
regulator chip and is not delivered to the load.
Line Regulation
The change in output voltage for a
change in the input voltage. The measurement is made under
conditions of low dissipation or by using pulse techniques
such that the average chip temperature is not significantly
affected.
Maximum Package Power Dissipation
The maximum
package power dissipation is the power dissipation level at
which the junction temperature reaches its maximum value
i.e. 150°C. The junction temperature is rising while the
difference between the input power (V
CC
X I
CC
) and the
output power (V
out
X I
out
) is increasing.
Depending on ambient temperature, it is possible to
calculate the maximum power dissipation and so the
maximum current as following:
T
*
T
A
Pd
+
J
R
qJA
The maximum operating junction temperature T
J
is
specified at 150°C, if T
A
= 25°C, then P
D
can be found. By
neglecting the quiescent current, the maximum power
dissipation can be expressed as:
I out
+
P
D
V
*
Vout
CC
The thermal resistance of the whole circuit can be
evaluated by deliberately activating the thermal shutdown
of the circuit (by increasing the output current or raising the
input voltage for example).
Then you can calculate the power dissipation by
subtracting the output power from the input power. All
variables are then well known: power dissipation, thermal
shutdown temperature and ambient temperature.
R
T
*
T
A
+
J
qJA
P
D
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4
MC33275, NCV33275
7
T
A
= 25° C
6 C
L
= 0.47
mF
I
L
= 10 mA
5 V
out
= 3.3 V
4
V
in
200
OUTPUT VOLTAGE CHANGE (mV)
150
100
50
7
T
A
= 25° C
6 C
L
= 33
mF
I
L
= 10 mA
5 V
out
= 3.3 V
4
3
2
1
0
0
50
100
TIME (mS)
150
V
out
V
in
70
60
50
40
30
20
10
0
-10
-20
200
OUTPUT VOLTAGE CHANGE (mV)
Vin , INPUT VOLTAGE (V)
3
2
1
0
0
20
40
60
80
100
120
140
160
TIME (mS)
0
V
out
-50
-100
180 200
Figure 2. Line Transient Response
Vin , INPUT VOLTAGE (V)
Figure 3. Line Transient Response
300
200
100
LOAD CURRENT (mA)
0
-100
-200
-300
-400 C
L
= 1.0
mF
V
out
= 3.3 V
-500 T
A
= 25° C
-600 V
in
= 4.3 V
-700
0
50
100
150
V
out
CHANGE
LOAD
CURRENT
1.0
0.8
OUTPUT VOLTAGE CHANGE (V)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
200
250
300
-1.0
350 400
LOAD CURRENT (mA)
350
250
150
50
-50
-150
-250
-350
-450
-550
-650
-750
0
50
100
150
200
250
300
-0.01
0.14
OUTPUT VOLTAGE CHANGE (V)
LOAD CURRENT
0.09
0.04
V
out
CHANGE
C
L
= 33.0
mF
V
out
= 3.3 V
T
A
= 25° C
V
in
= 4.3 V
-0.06
-0.11
-0.16
TIME (mS)
TIME (mS)
Figure 4. Load Transient Response
Figure 5. Load Transient Response
3.5
3.0
OUTPUT VOLTAGE (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 5.0
INPUT VOLTAGE (V)
I
L
= 1 mA
I
L
= 250 mA
300
250
200
150
100
50
0
1
10
100
1000
I
O
, OUTPUT CURRENT (mA)
Figure 6. Output Voltage versus Input Voltage
DROPOUT VOLTAGE (mV)
5
Figure 7. Dropout Voltage versus Output Current
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