MC74VHC1G50
Buffer
The MC74VHC1G50 is an advanced high speed CMOS buffer
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining
CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffered
output which provides high noise immunity and stable output.
The MC74VHC1G50 input structure provides protection when
voltages up to 7.0 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G50 to be used to interface 5.0 V circuits to 3.0 V
circuits.
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MARKING
DIAGRAMS
SC-
-88A / SOT-
-353/SC-
-70
DF SUFFIX
CASE 419A
•
•
•
•
•
•
•
High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FET = 104; Equivalent Gate = 26
These devices are available in Pb-
-free package(s). Specifications herein
apply to both standard and Pb-
-free devices. Please see our website at
www.onsemi.com for specific Pb-
-free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
VR
d
Pin 1
d = Date Code
TSOP-
-5/SOT-
-23/SC-
-59
DT SUFFIX
CASE 483
VR
d
Pin 1
d = Date Code
NC
1
5
V
CC
1
PIN ASSIGNMENT
NC
IN A
GND
OUT Y
V
CC
2
3
4
IN A
2
GND
3
4
OUT Y
5
FUNCTION TABLE
Figure 1. Pinout
(Top View)
A Input
L
H
Y Output
L
H
IN A
1
OUT Y
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
©
Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 12
-
1
Publication Order Number:
MC74VHC1G50/D
MC74VHC1G50
MAXIMUM RATINGS
(Note 1)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T
stg
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC--88A, TSOP--5
SC--88A, TSOP--5
V
OUT
< GND; V
OUT
> V
CC
V
CC
= 0
High or Low State
Characteristics
Value
--0.5 to +7.0
--0.5 to +7.0
--0.5 to 7.0
--0.5 to V
CC
+ 0.5
--20
+20
+25
+50
200
333
260
+150
--65 to +150
> 2000
> 200
N/A
±500
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
I
Latch--Up
Latch--Up Performance
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute--maximum--rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22--A114--A
3. Tested to EIA/JESD22--A115--A
4. Tested to JESD22--C101--A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Characteristics
Min
2.0
0.0
0.0
--55
0
0
Max
5.5
5.5
V
CC
+125
100
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
Junction
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130
°
C
TJ = 120
°
C
TJ = 110
°
C
TJ = 100
°
C
TJ = 80
°
C
100
TIME, YEARS
TJ = 90
°
C
1
1
10
1000
Figure 3. Failure Rate vs. Time
Junction Temperature
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2
MC74VHC1G50
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
Parameter
Minimum High--Level
Input Voltage
Test Conditions
V
CC
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= V
IH
or V
IL
I
OH
= --50
mA
V
IN
= V
IH
or V
IL
I
OH
= --4 mA
I
OH
= --8 mA
V
OL
Maximum Low--Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
2.0
3.0
4.5
T
A
= 25°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
20
Typ
Max
T
A
≤
85°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±1.0
40
Max
-
-55
≤
T
A
≤
125°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
Max
Unit
V
V
IL
Maximum Low--Level
Input Voltage
V
V
OH
Minimum High--Level
Output Voltage
V
IN
= V
IH
or V
IL
V
V
V
V
mA
mA
AC ELECTRICAL CHARACTERISTICS
C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25°C
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propaga-
tion Delay,
Input A to Y
Test Conditions
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5 V
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
Min
Typ
4.5
6.4
3.5
4.5
4
Max
7.1
10.6
5.5
7.5
10
T
A
≤
85°C
Min
Max
8.5
12.0
6.5
8.5
10
-
-55
≤
T
A
≤
125°C
Min
Max
10.0
14.5
8.0
10.0
10
pF
Unit
ns
C
IN
Maximum Input Ca-
pacitance
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
8.0
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
¯
V
CC
¯
f
in
+ I
CC
. C
PD
is used to determine the no--load dynamic
power consumption; P
D
= C
PD
¯
V
CC2
¯
f
in
+ I
CC
¯
V
CC
.
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3
MC74VHC1G50
TEST POINT
A or B
V
CC
50%
t
PHL
Y
50% V
CC
*Includes all probe and jig capacitance
t
PLH
GND
DEVICE
UNDER
TEST
OUTPUT
C
L
*
Figure 4. Switching Waveforms
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Circuit
Indicator
MC
MC
MC
Temp
Range
Identifier
74
74
74
Device
Function
50
50
50
Package
Suffix
DF
DF
DT
Tape &
Reel
Suffix
T1
T2
T1
Tape and
Reel Size
†
178 mm (7”)
3000 Unit
178 mm (7”)
3000 Unit
178 mm (7”)
3000 Unit
Device Order Number
MC74VHC1G50DFT1
MC74VHC1G50DFT2
MC74VHC1G50DTT1
Technology
VHC1G
VHC1G
VHC1G
Package Type
SC--88A /
SOT--353 / SC--70
SC--88A /
SOT--353 / SC--70
TSOP--5 / SOT--23
/ SC--59
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC1G50
CAVITY
TAPE
TOP TAPE
TAPE TRAILER
(Connected to Reel Hub)
NO COMPONENTS
160 mm MIN
COMPONENTS
DIRECTION OF FEED
TAPE LEADER
NO COMPONENTS
400 mm MIN
Figure 6. Tape Ends for Finished Goods
TAPE DIMENSIONS mm
2.00
4.00
4.00
∅1.50
TYP
1.75
8.00
±0.30
3.50
±0.50
1
∅1.00
MIN
DIRECTION OF FEED
Figure 7. SC- -5/SC-
-70-
-88A/SOT-
-353 DFT1 Reel Configuration/Orientation
TAPE DIMENSIONS mm
2.00
4.00
4.00
∅1.50
TYP
1.75
8.00
±0.30
3.50
±0.50
1
∅1.00
MIN
DIRECTION OF FEED
Figure 8. SC-
-70/SC-
-88A/SOT-
-353 DFT2 and SOT23-
-5/TSOP-
-5/SC59- DTT1 Reel Configuration/Orientation
-5
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5
