IXYS
Absolute Maximum Ratings
Date: 08.08.2011
Data Sheet Issue: 2
Thyristor/Diode Modules M## 501
V
RRM
V
DRM
[V]
MCC
1200
1400
1600
1800
501-12io2
501-14io2
501-16io2
501-18io2
MCD
501-12io2
501-14io2
501-16io2
501-18io2
MDC
501-12io2
501-14io2
501-16io2
501-18io2
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage
1)
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
1)
Non-repetitive peak reverse voltage
1)
1)
MAXIMUM
LIMITS
1200-1800
1300-1900
1200-1800
1300-1900
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
V
ISOL
T
vj op
T
stg
Maximum average on-state current, T
C
= 85°C
2)
Maximum average on-state current. T
C
= 100°C
2)
Nominal RMS on-state current, T
C
= 55°C
2)
D.C. on-state current, T
C
= 55°C
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
3)
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10V
3)
2
3)
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
MAXIMUM
LIMITS
503
347
1195
985
14.5
16.0
1.05×10
6
1.28×10
6
200
400
5
4
30
3000
-40 to +125
-40 to +125
UNITS
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
V
°C
°C
I
2
t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
3)
Critical rate of rise of on-state current (repetitive)
4)
Critical rate of rise of on-state current (non-repetitive)
4)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Isolation Voltage
5)
Operating temperature range
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C T
vj
initial.
4) V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
≤
0.5µs, T
C
= 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
Page 1 of 10
August, 2011
IXYS
Characteristics
PARAMETER
V
TM
V
TM
V
T0
r
T
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
MIN.
-
-
-
-
1000
-
-
-
-
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1350
1150
120
19
-
-
-
-
-
-
-
1.5
MAX. TEST CONDITIONS
1)
1.50
1.43
0.85
0.30
-
70
70
2.5
250
-
1000
300
2.0
8.0
1550
-
-
-
200
I
TM
= 1500 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 100 V, V
DR
= 67%V
DRM
, dv
DR
/dt = 50 V/µs
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 100 V
V
D
= 80% V
DRM
, linear ramp, Gate o/c
Rated V
DRM
Rated V
RRM
T
vj
= 25°C, V
D
= 12 V, I
T
= 3 A
67% V
DRM
V
D
= 12 V, T
vj
= 25°C
V
D
= 12 V, T
vj
= 25°C
I
FG
= 2 A, t
r
= 1 µs, V
D
= 40%V
DRM
,
I
TM
= 1500 A, di/dt = 10 A/µs, T
vj
= 25°C
I
TM
= 1700 A
I
TM
= 1500 A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
K/W
Nm
(dv/dt)
cr
Critical rate of rise of off-state voltage
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
L
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJC
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Latching current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time
Thermal resistance, junction to case
0.062 Single Thyristor
0.031 Whole Module
0.02
0.01
5.75
13.8
-
2)
R
thCH
F
1
F
2
W
t
Thermal resistance, case to heatsink
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated.
Single Thyristor
Whole Module
4.25
10.2
-
Nm
kg
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
Page 2 of 10
August, 2011
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
18
V
DRM
V
RRM
V
1200
1400
1600
1800
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
V
DSM
V
RSM
V
1300
1500
1700
1900
V
D
V
R
DC V
900
1050
1200
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
Page 3 of 10
August, 2011
IXYS
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
I
AV
=
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
= 0.85 V, r
T
= 0.30 mΩ.
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0702
0.0677
60°
0.0685
0.0673
90°
0.0679
0.0664
120°
0.0668
0.0655
180°
0.0658
0.0650
270°
0.0637
d.c.
0.0620
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating thyristor V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented by a set of constants A, B, C, D, forming
the coefficients of the representative equation for V
T
in terms of I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
T
agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A
B
C
D
1.27624207
5.582967×10
-4
2.407706×10
-4
-4.020685×10
-3
A
B
C
D
125°C Coefficients
1.1481301
-0.07739233
1.873999×10
-4
0.01475625
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
Page 4 of 10
August, 2011
IXYS
8.3 D.C. Thermal Impedance Calculation
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
−
t
⎛
τ
r
t
=
∑
r
p
⋅ ⎜
1
−
e
p
⎜
p
=
1
⎝
p
=
n
⎞
⎟
⎟
⎠
Where
p = 1
to
n and:
n
t
r
t
r
p
τ
p
= number of terms in the series
= Duration of heating pulse in seconds
= Thermal resistance at time t
= Amplitude of p
th
term
= Time Constant of r
th
term
The coefficients for this device are shown in the table below:
D.C.
Term
1
1.37×10
-3
7.6×10
-4
2
4.86×10
-3
8.6×10
-3
3
0.0114
0.101
4
0.0223
0.56
5
0.0221
3.12
r
p
τ
p
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150 µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
Page 5 of 10
August, 2011
FPGA/CPLD
