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MCL4151

0.15 A, 75 V, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
Reach Compliance Code
unknow
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-609代码
e2
湿度敏感等级
1
最大非重复峰值正向电流
2 A
元件数量
1
最高工作温度
175 °C
最大输出电流
0.2 A
最大重复峰值反向电压
75 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子面层
Tin/Silver (Sn97.5Ag2.5)
文档预览
MCL4151
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the device
1N4151
• MicroMELF package
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
9612315
Applications
• Extreme fast switches
Mechanical Data
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3 / 10 k per 13" reel (8 mm tape), 10 k/box
TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
MCL4151
Type differentiation
V
RRM
= 75 V
Ordering code
MCL4151-TR3 or MCL4151-TR
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
V
R
= 0
t
p
= 1 µs
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
Value
75
50
2
450
200
150
500
Unit
V
V
A
mA
mA
mA
mW
Document Number 85567
Rev. 1.9, 20-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
MCL4151
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
Mounted on epoxy-glass hard
tissue, fig. 4,
35 µm copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
T
j
T
stg
Value
Unit
Junction to ambient air
500
K/W
Junction temperature
Storage temperature range
175
- 65 to + 175
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse voltage
Breakdown voltage
Diode capacitance
Reverse recovery time
Test condition
I
F
= 50 mA
V
R
= 50 V
V
R
= 50 V, T
j
= 150 °C
I
R
= 5 µA, t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= 10 mA, i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
75
2
4
2
Min.
Typ.
880
Max.
1000
50
50
Unit
mV
nA
µA
V
pF
ns
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
100
I
R
- Reverse Current (µA)
Scattering Limit
I
F
- Forward Current (mA)
10
100
T
j
= 100 °C
1000
1
10
T
j
= 25 °C
0.1
V
R
= 50
V
0
40
80
120
160
200
1
0.01
94 9151
0.1
0
94 9152
0.4
0.8
1.2
1.6
2.0
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85567
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.9, 20-Aug-10
MCL4151
Vishay Semiconductors
3.0
C
D
- Diode Capacitance (pF)
2.5
2.0
1.5
1.0
0.5
0
0.1
94 9153
0.71
1.3
1.27
f = 1 MHz
T
j
= 25 °C
25
0.152
9.9
24
0.6 (0.024)
> R2.5 (0.098)
glass
Wave
soldering
2.8 (0.110)
0.8 (0.031)
0.9 (0.035)
0.9 (0.035)
2.4 (0.094)
0.8 (0.031)
1.4 (0.055)
1 (0.039)
0.355
10
2.5
1
10
100
95 10329
V
R
- Reverse
Voltage
(V)
Figure 3. Diode Capacitance vs. Reverse Voltage
Figure 4. Board for R
thJA
definition (in mm)
Package Dimensions
in millimeters (inches):
MicroMELF
Cathode indification
1 (0.039)
surface plan
1.2 (0.047)
*
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
*
The gap
between
plug and glass can
be
either on cathode or anode side
Foot print recommendation:
Reflow soldering
1.2 (0.047)
0.8 (0.031)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Document Number 85567
Rev. 1.9, 20-Aug-10
1.1 (0.043)
surface plan
1.
<
gl
35
(
as
0.0
s
53
)
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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参数对比
与MCL4151相近的元器件有:MCL4151_12。描述及对比如下:
型号 MCL4151 MCL4151_12
描述 0.15 A, 75 V, SILICON, SIGNAL DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
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