型号
- 型号
- 关键词
32KX36 CACHE SRAM, 12ns, PBGA119, 1.27 MM PITCH, PLASTIC, BGA-119
厂商名称：Motorola ( NXP )
厂商官网：https://www.nxp.com
下载文档| 型号 | MCM69F536ZP12 | MCM69F536ZP8 | MCM69F536ZP10 |
|---|---|---|---|
| 描述 | 32KX36 CACHE SRAM, 12ns, PBGA119, 1.27 MM PITCH, PLASTIC, BGA-119 | 32KX36 CACHE SRAM, 10ns, PBGA119, 1.27 MM PITCH, PLASTIC, BGA-119 | 32KX36 CACHE SRAM, 10ns, PBGA119, 1.27 MM PITCH, PLASTIC, BGA-119 |
| 是否无铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 零件包装代码 | BGA | BGA | BGA |
| 包装说明 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 |
| 针数 | 119 | 119 | 119 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 12 ns | 10 ns | 10 ns |
| 其他特性 | TEMP TJ = 20 TO 110 DEG C; SELF-TIMED WRITE; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | TEMP TJ = 20 TO 110 DEG C; SELF-TIMED WRITE; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | TEMP TJ = 20 TO 110 DEG C; SELF-TIMED WRITE; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE |
| I/O 类型 | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
| JESD-609代码 | e0 | e0 | e0 |
| 长度 | 22 mm | 22 mm | 22 mm |
| 内存密度 | 1179648 bit | 1179648 bit | 1179648 bit |
| 内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 36 | 36 | 36 |
| 功能数量 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 |
| 端子数量 | 119 | 119 | 119 |
| 字数 | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 组织 | 32KX36 | 32KX36 | 32KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA |
| 封装等效代码 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.4 mm | 2.4 mm | 2.4 mm |
| 最大待机电流 | 0.01 A | 0.01 A | 0.01 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.225 mA | 0.275 mA | 0.25 mA |
| 最大供电电压 (Vsup) | 3.465 V | 3.465 V | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES |
| 技术 | BICMOS | BICMOS | BICMOS |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL | BALL | BALL |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 14 mm | 14 mm | 14 mm |
