MCMA110P1600TA
Thyristor Module
V
RRM
I
TAV
V
T
= 2x 1600 V
=
=
110 A
1.21 V
Phase leg
Part number
MCMA110P1600TA
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-240AA
●
Isolation Voltage: 4800 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
© 2014 IXYS all rights reserved
MCMA110P1600TA
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 140°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 140 °C
T
VJ
= 140 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max.
1700
1600
100
10
1.24
1.52
1.21
1.57
110
170
0.85
3.3
0.3
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 140 °C
95
10
5
0.5
T
VJ
= 140°C; f = 50 Hz
t
P
= 200 µs; di
G
/dt = 0.45 A/µs;
I
G
= 0.45 A; V
D
=
⅔
V
DRM
non-repet., I
T
= 110 A
T
VJ
= 140°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 140 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
185
500 A/µs
1000 V/µs
1.5
1.6
150
200
0.2
10
t
p
= 10 µs
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
200
200
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
repetitive, I
T
= 330 A
380
1.90
2.05
1.62
1.75
Unit
V
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
K/W
W
kA
kA
kA
kA
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
= 110 A
I
T
= 220 A
I
T
= 110 A
I
T
= 220 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85°C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
18.1 kA²s
17.5 kA²s
13.0 kA²s
12.7 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
V
D
=
⅔
V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
V
R
= 100 V; I
T
= 110 A; V
D
=
⅔
V
DRM
T
VJ
= 140 °C
di/dt = 10 A/µs; dv/dt =
20 V/µs; t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
© 2014 IXYS all rights reserved
MCMA110P1600TA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
140
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
90
2.5
2.5
13.0
16.0
9.7
16.0
4800
4000
4
4
Part number
M
C
M
A
110
P
1600
TA
=
=
=
=
=
=
=
=
Module
Thyristor (SCR)
Thyristor
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
TO-240AA-1B
Ordering
Standard
Part Number
MCMA110P1600TA
Marking on Product
MCMA110P1600TA
Delivery Mode
Box
Quantity
6
Code No.
513383
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 140 °C
V
0 max
R
0 max
0.85
2.1
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
© 2014 IXYS all rights reserved
MCMA110P1600TA
Outlines TO-240AA
3
6
7
1
5
4
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
© 2014 IXYS all rights reserved
MCMA110P1600TA
Thyristor
300
50 Hz, 80% V
RRM
250
200
1600
10
5
V
R
= 0 V
I
T
150
I
TSM
1200
T
VJ
= 125°C
140°C
T
VJ
= 140°C
50
T
VJ
= 25°C
0
0.5
800
It
10
4
T
VJ
= 45°C
2
T
VJ
= 45°C
[A]
100
[A]
[A s]
2
T
VJ
= 140°C
10
3
1.0
1.5
2.0
0.01
0.1
1
1
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
100.0
200
2
t [ms]
Fig. 3 I t versus time (1-10 s)
10
1: I
GD
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
5
3
4
6
160
10.0
T
VJ
= 25°C
120
I
TAVM
lim.
1.0
typ.
40
V
G
1
2
1
t
gd
[μs]
dc =
1
0.5
0.4
0.33
0.17
0.08
[V]
[A]
80
4: P
GAV
= 0.5 W
0.1
1
10
100
5: P
GM
= 5 W
6: P
GM
= 10 W
1000
10000
0.1
0.01
0
0.10
1.00
10.00
0
40
80
120
160
I
G
[mA]
Fig. 4 Gate voltage & gate current
I
G
[A]
Fig. 5 Gate controlled delay time t
gd
T
case
[°C]
Fig. 6 Max. forward current at
case temperature
180
150
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
0.32
P
tot
120
0.24
[W]
90
60
30
0
0
Z
thJC
0.16
[K/W]
0.08
i R
thi
(K/W)
1
0.0073
2
0.0128
3
0.1779
4
0.1020
1
10
100
1000
t
i
(s)
0.0001
0.0031
0.1000
0.4400
10000
0.00
40
80
120 0
40
80
120
160
I
T(AV)
[A]
T
amb
[°C]
t
[ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140313a
© 2014 IXYS all rights reserved
EE_FPGA学习乐园
