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MCP1703AT-1201E/MC

FIXED POSITIVE LDO REGULATOR

器件类别:电源/电源管理    电源电路   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
厂商名称
Microchip(微芯科技)
包装说明
DFN-8
Reach Compliance Code
compli
ECCN代码
EAR99
最大输入电压
16 V
最小输入电压
2.7 V
JESD-30 代码
R-PDSO-N8
长度
3 mm
功能数量
1
端子数量
8
工作温度TJ-Max
125 °C
工作温度TJ-Mi
-40 °C
最大输出电压 1
1.212 V
最小输出电压 1
1.188 V
标称输出电压 1
1.2 V
封装主体材料
PLASTIC/EPOXY
封装代码
HVSON
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
调节器类型
FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度
1 mm
表面贴装
YES
技术
CMOS
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
DUAL
宽度
2 mm
文档预览
MCP1703A
250 mA, 16V, Low Quiescent Current LDO Regulator
Features:
Reduced Ground Current During Dropout
Faster Startup Time
2.0 µA Typical Quiescent Current
Input Operating Voltage Range: 2.7V to16.0V
250 mA Output Current for Output Voltages
2.5V
200 mA Output Current for Output Voltages < 2.5V
Low Dropout Voltage, 625 mV Typical @ 250 mA
for V
R
= 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V,
5.0V
Output Voltage Range: 1.2V to 5.5V in 0.1V
Increments (50 mV increments available upon
request)
A/D Friendly Voltage Options: 2.05V, 3.07V, 4.1V
Stable with 1.0 µF to 22 µF Ceramic Output
Capacitance
Short-Circuit Protection
Overtemperature Protection
Description:
The MCP1703A is an improved version of the
MCP1703 low dropout (LDO) voltage regulator that can
deliver up to 250 mA of current while consuming only
2.0 µA of quiescent current (typical). The input
operating range is specified from 2.7V to 16.0V, making
it an ideal choice for two to six primary cell battery-
powered applications, 9V alkaline and one or two-cell
Li-Ion-powered applications.
The MCP1703A is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (V
OUT
= 2.8V). The output voltage tolerance
of the MCP1703A is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
Output voltages available for the MCP1703A range
from 1.2V to 5.5V. The LDO output is stable when using
only 1 µF of output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-223-3, SOT-23A,
2x3 DFN-8 and SOT-89-3.
Applications:
Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
Package Types
2x3 DFN*
V
OUT
1
NC 2
NC 3
GND 4
EP
9
8 V
IN
7 NC
6 NC
5 NC
1
2
GND V
OUT
SOT-89
V
IN
SOT-223
SOT-23A
V
IN
3
Related Literature:
• AN765, “Using
Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2007
• AN766, “Pin-Compatible
CMOS Upgrades to
Bipolar LDOs”,
DS00766,
Microchip Technology Inc., 2003
• AN792, “A
Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
1
2
3
1
2
3
GND V
IN
V
OUT
V
IN
GND V
OUT
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2012-2013 Microchip Technology Inc.
DS20005122B-page 1
MCP1703A
Functional Block Diagrams
MCP1703A
V
IN
V
OUT
Error Amplifier
+V
IN
Voltage
Reference
-
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1703A
V
OUT
V
IN
V
OUT
3.3V
C
OUT
1 µF Ceramic
I
OUT
50 mA
9V
Battery
+
V
IN
V
IN
GND
C
IN
1 µF Ceramic
DS20005122B-page 2
2012-2013 Microchip Technology Inc.
MCP1703A
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
V
DD
..................................................................................+18V
All inputs and outputs w.r.t. .............(V
SS
-0.3V) to (V
IN
+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM; MM)
............. ≥
4 kV;
400V
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
,
Note 1,
I
LOAD
= 1 mA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures,
T
J
(Note
7)
of -40°C to +125°C.
Parameters
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
V
IN
I
q
I
OUT
2.7
250
50
100
150
200
Output Short Circuit Current
I
OUT_SC
2.0
100
130
200
230
400
16.0
5
V
µA
mA
mA
mA
mA
mA
mA
Note 1
I
L
= 0 mA
For V
R
2.5V
For V
R
< 2.5V, V
IN
2.7V
For V
R
< 2.5V, V
IN
2.95V
For V
R
< 2.5V, V
IN
3.2V
For V
R
< 2.5V, V
IN
3.45V
V
IN
= V
IN(MIN)
(Note
1),
V
OUT
= GND,
Current (average current) measured
10 ms after short is applied.
Note 2
1% Custom
Note 3
(V
OUT(MAX)
+ V
DROPOUT(MAX)
)
V
IN
16V,
Note 1
I
L
= 1.0 mA to 250 mA for V
R
2.5V
I
L
= 1.0 mA to 200 mA for V
R
< 2.5V
V
IN
= 3.65V,
Note 4
Symbol
Min
Typ
Max
Units
Conditions
Output Voltage Regulation
V
OUT
V
R
-3.0%
V
R
-2.0%
V
R
-1.0%
V
R
±0.4%
V
R
±0.4%
V
R
±0.4%
65
±0.1
±1.0
V
R
+3.0%
V
R
+2.0%
V
R
+1.0%
+0.3
+2.5
V
V
V
ppm/°C
%/V
%
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
TCV
OUT
DV
OUT
/
(V
OUT
xΔV
IN
)
ΔV
OUT
/V
OUT
-0.3
-2.5
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
(V
OUT(MAX)
+ V
DROPOUT(MAX)
).
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The
input voltage V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or Vi
IN
= 2.7V (whichever is greater); I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) x 10
6
/(V
R
x
ΔTemperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, q
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
2012-2013 Microchip Technology Inc.
DS20005122B-page 3
MCP1703A
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
,
Note 1,
I
LOAD
= 1 mA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures,
T
J
(Note
7)
of -40°C to +125°C.
Parameters
Dropout Voltage
Note 1, Note 5
Symbol
V
DROPOUT
Min
Output Delay Time
Output Noise
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Note 1:
2:
3:
4:
5:
6:
T
DELAY
e
N
PSRR
Typ
330
525
625
750
600
1
35
Max
650
725
975
1100
Units
mV
mV
mV
mV
mV
µs
Conditions
I
L
= 250 mA, V
R
= 5.0V
I
L
= 250 mA, 3.3V
V
R
< 5.0V
I
L
= 250 mA, 2.8V
V
R
< 3.3V
I
L
= 250 mA, 2.5V
V
R
< 2.8V
V
R
< 2.5V, See Maximum Output
Current Parameter
V
IN
= 0V to 6V, V
OUT
= 90% V
R
,
R
L
= 50Ω resistive
f = 100 Hz, C
OUT
= 1 µF, I
L
= 10 mA,
V
INAC
= 200 mV pk-pk, C
IN
= 0 µF,
V
R
= 5.0V
µV/(Hz)
1/2
I
L
= 50 mA, f = 1 kHz, C
OUT
= 1 µF
dB
T
SD
150
°C
7:
The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
(V
OUT(MAX)
+ V
DROPOUT(MAX)
).
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The
input voltage V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or Vi
IN
= 2.7V (whichever is greater); I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) x 10
6
/(V
R
x
ΔTemperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, q
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
(1)
Parameters
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Thermal Package Resistance (Note
2)
Thermal Resistance, 3LD SOT-223
Thermal Resistance, 3LD SOT-23A
Thermal Resistance, 3LD SOT-89
Thermal Resistance, 8LD 2x3 DFN
Note 1:
θ
JA
θ
JC
θ
JA
θ
JC
θ
JA
θ
JC
θ
JA
θ
JC
62
15
336
110
180
52
70
13.4
°C/W
°C/W
°C/W
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
T
J
T
J
T
A
-40
-65
+125
+150
+150
°C
°C
°C
Steady State
Transient
Sym
Min
Typ
Max
Units
Conditions
2:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DS20005122B-page 4
2012-2013 Microchip Technology Inc.
MCP1703A
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated: C
OUT
= 1 µF Ceramic (X7R), C
IN
= 1 µF Ceramic (X7R), I
L
= 1 mA, T
A
= +25°C,
V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
Note:
Junction Temperature (T
J
) is approximated by soaking the device under test to an ambient temperature equal to
the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the
Ambient temperature is not significant.
5.00
Quiescent Current (µA)
GND Current (µA)
60
V
OUT
= 1.2V
I
OUT
= 0 µA
+130°C
4.00
3.00
-45°C
50
40
30
20
10
0
V
OUT
= 1.2V
V
IN
= 2.7V
0°C
2.00
1.00
0.00
2
4
6
8
10
+90°C +25°C
12
14
16
0
40
80
120
160
200
Input Voltage (V)
Load Current (mA)
FIGURE 2-1:
Voltage.
6.00
Quiescent Current (µA)
Quiescent Current vs. Input
FIGURE 2-4:
Current.
60
Ground Current vs. Load
4.00
3.00
2.00
1.00
+90°C
+130°C
GND Current (µA)
5.00
V
OUT
= 2.5V
I
OUT
= 0 µA
50
40
30
20
10
0
V
OUT
= 5.0V
V
IN
= 6.0V
V
OUT
= 2.5V
V
IN
= 3.5V
- 45°C
0°C
+90°C
0.00
2
4
6
8
10
12
14
16
Input Voltage (V)
0
50
100
150
200
250
Load Current (mA)
FIGURE 2-2:
Voltage.
7
Quiescent Current (µA)
6
5
4
3
2
1
6
8
Quiescent Current vs. Input
FIGURE 2-5:
Current.
3.0
Quiescent Current (µA)
Ground Current vs. Load
V
OUT
= 5.0V
I
OUT
= 0 µA
I
OUT
= 0 mA
- 45°C
2.5
2.0
1.5
1.0
0.5
0.0
V
OUT
= 1.2V
V
IN
= 2.7V
V
OUT
= 5.0V
V
IN
= 6.0V
+25°C
+130°C
0°C
+90°C
V
OUT
= 2.5V
V
IN
= 3.5V
10
12
14
16
-45
-20
5
30
55
80
105
130
Input Voltage (V)
Junction Temperature (°C)
FIGURE 2-3:
Voltage.
Quiescent Current vs. Input
FIGURE 2-6:
Quiescent Current vs.
Junction Temperature.
2012-2013 Microchip Technology Inc.
DS20005122B-page 5
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