MCP1801
150 mA, High PSRR, Low Quiescent Current LDO
Features:
•
•
•
•
•
•
•
•
•
•
•
150 mA Maximum Output Current
Low Dropout Voltage, 200 mV typical @ 100 mA
25 µA Typical Quiescent Current
0.01 µA Typical Shutdown Current
Input Operating Voltage Range: 2.0V to 10.0V
Standard Output Voltage Options:
- 0.9V, 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V, 6.0V
Output Voltage Accuracy:
- ±2% (V
R
> 1.5V), ±30 mV (V
R
1.5V)
Stable with Ceramic Output Capacitors
Current Limit Protection
Shutdown Pin
High PSRR: 70 dB typical @ 10 kHz
Description:
The MCP1801 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 150 mA of
current while consuming only 25 µA of quiescent
current (typical). The input operating range is specified
from 2.0V to 10.0V, making it an ideal choice for two to
six primary cell battery-powered applications, 9V
alkaline and one or two cell Li-Ion-powered
applications.
The MCP1801 is capable of delivering 100 mA with
only 200 mV (typical) of input to output voltage
differential (V
OUT
= 3.3V). The output voltage tolerance
of the MCP1801 at +25°C is typically ±0.4% with a
maximum of ±2%. Line regulation is ±0.01% typical at
+25°C.
The LDO output is stable with a minimum of 1 µF of
output capacitance. Ceramic, tantalum, or aluminum
electrolytic capacitors can all be used for input and
output. Overcurrent limit with current foldback provides
short-circuit protection. A shutdown (SHDN) function
allows the output to be enabled or disabled. When
disabled, the MCP1801 draws only 0.01 µA of current
(typical).
The MCP1801 is available in a SOT-23-5 package.
Applications:
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Wireless Communications Equipment
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
Battery Powered Data Loggers
Package Types
SOT-23-5
V
OUT
5
NC
4
Related Literature:
• AN765,
“Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
• AN766,
“Pin-Compatible CMOS Upgrades to
BiPolar LDOs”,
DS00766,
Microchip Technology Inc., 2002
• AN792,
“A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
1
V
IN
2
V
SS
3
SHDN
2010 Microchip Technology Inc.
DS22051D-page 1
MCP1801
Functional Block Diagram
MCP1801
+V
IN
V
IN
V
OUT
SHDN
Shutdown
Control
+V
IN
Voltage
Reference
-
+
Current Limiter
Error Amplifier
GND
Typical Application Circuit
MCP1801
V
IN
1
V
IN
V
OUT
5
V
OUT
3.3V @ 40 mA
C
OUT
1 µF Ceramic
2
9V
Battery
+
C
IN
1 µF
Ceramic
3
G
ND
SHDN
NC
4
DS22051D-page 2
2010 Microchip Technology Inc.
MCP1801
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings †
Input Voltage ................................................................. +12V
Output Current (Continuous) ..................... P
D
/(V
IN
-V
OUT
)mA
Output Current (Peak) ............................................... 500 mA
Output Voltage ............................... (V
SS
-0.3V) to (V
IN
+0.3V)
SHDN Voltage ..................................(V
SS
-0.3V) to (V
IN
+0.3V)
Continuous Power Dissipation:
SOT-23-5 .............................................................. 250 mW
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1.0V,
Note 1,
C
OUT
= 1 µF (X7R),
C
IN
= 1 µF (X7R), V
SHDN
= V
IN
, T
A
= +25°C.
Parameters
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Shutdown Current
Maximum Output Current
Current Limiter
Output Short Circuit Current
Output Voltage Regulation
V
OUT
Temperature Coeffi-
cient
Line Regulation
V
IN
I
q
I
SHDN
I
OUT_mA
I
LIMIT
I
OUT_SC
V
OUT
TCV
OUT
V
OUT
/
(V
OUT
XV
IN
)
2.0
—
—
150
—
—
V
R
-2.0%
V
R
-30 mV
—
-0.2
—
25
0.01
—
300
50
V
R
V
R
100
±0.01
10.0
50
0.10
—
—
—
V
R
+2.0%
V
R
+30 mV
—
+0.2
ppm/°C
%/V
V
µA
µA
mA
mA
mA
V
if V
R
1.75V, then V
IN
= V
R
+ 2.0V
if V
R
1.75V, then V
IN
= V
R
+ 2.0V
V
R
1.45V, I
OUT
= 30 mA,
Note 2
V
R
1.45V, I
OUT
= 30 mA
I
OUT
= 30 mA, -40°C
T
A
+85°C,
Note 3
(V
R
+ 1V)
V
IN
10V,
Note 1
V
R
1.75V, I
OUT
= 30 mA
V
R
1.75V, I
OUT
= 10 mA
I
L
= 1.0 mA to 100 mA,
Note 4
I
L
= 30 mA, 3.1V
V
R
6.0V
I
L
= 100 mA, 3.1V
V
R
6.0V
I
L
= 30 mA, 2.0V
V
R
3.1V
I
L
= 100 mA, 2.0V
V
R
< 3.1V
V
dB
I
L
= 30 mA, V
R
2.0V
I
L
= 100 mA, V
R
< 2.0V
f = 10 kHz, I
L
= 50 mA,
V
INAC
= 1V pk-pk, C
IN
= 0 µF,
if V
R
1.5V, then V
IN
= 2.5V
I
OUT
=100 mA, f=1 kHz,
C
OUT
=1 µF (X7R Ceramic),
V
OUT
=3.3V
Note 1
I
L
= 0 mA
SHDN = 0V
Sym
Min
Typ
Max
Units
Conditions
Load Regulation
Dropout Voltage,
Note 5
V
OUT
/V
OUT
V
DROPOUT
—
—
—
—
—
—
—
15
60
200
80
240
2.07 - V
R
2.23 - V
R
70
50
90
250
120
350
2.10 - V
R
2.33 - V
R
—
mV
mV
Power Supply Ripple
Rejection Ratio
Output Noise
PSRR
—
e
N
—
0.6
—
µV/Hz
Note 1:
2:
3:
4:
5:
The minimum V
IN
must meet two conditions: V
IN
2.0V
and V
IN
(V
R
+ 1.0V).
V
R
is the nominal regulator output voltage. For example: V
R
= 1.8V, 2.5V, 3.0V, 3.3V, or 5.0V.
The input voltage V
IN
= V
R
+ 1.0V or Vi
IN
= 2.0V (whichever is greater); I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
R
+ 1.0V or 2.0V, whichever is greater.
2010 Microchip Technology Inc.
DS22051D-page 3
MCP1801
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1.0V,
Note 1,
C
OUT
= 1 µF (X7R),
C
IN
= 1 µF (X7R), V
SHDN
= V
IN
, T
A
= +25°C.
Parameters
Shutdown Input
Logic High Input
Logic Low Input
Note 1:
2:
3:
4:
5:
V
SHDN-HIGH
V
SHDN-LOW
1.6
—
—
—
—
0.25
V
V
Sym
Min
Typ
Max
Units
Conditions
The minimum V
IN
must meet two conditions: V
IN
2.0V
and V
IN
(V
R
+ 1.0V).
V
R
is the nominal regulator output voltage. For example: V
R
= 1.8V, 2.5V, 3.0V, 3.3V, or 5.0V.
The input voltage V
IN
= V
R
+ 1.0V or Vi
IN
= 2.0V (whichever is greater); I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
R
+ 1.0V or 2.0V, whichever is greater.
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, 5LD SOT-23
JA
JC
—
—
256
81
—
—
°C/W EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
T
A
Tstg
-40
-55
—
—
+85
+125
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS22051D-page 4
2010 Microchip Technology Inc.
MCP1801
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated: V
R
= 3.3V, C
OUT
= 1 µF Ceramic (X7R), C
IN
= 1 µF Ceramic (X7R), I
L
= 100 µA,
T
A
= +25°C, V
IN
= V
R
+ 1.0V, SOT-23-5.
Note:
Junction Temperature (T
J
) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature.
The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
27.00
Quiescent Current (µA)
26.00
25.00
24.00
23.00
22.00
21.00
20.00
2
4
6
Input Voltage (V)
8
10
0°C
-45°C
+90°C
+25°C
V
OUT
= 0.9V
I
OUT
= 0 µA
80
70
GND Current (µA)
60
50
40
30
20
10
0
0
30
60
V
OUT
= 0.9V
V
IN
= 2.0V
90
120
150
Load Current (mA)
FIGURE 2-1:
Voltage.
30.00
Quiescent Current (µA)
29.00
28.00
27.00
26.00
25.00
24.00
4
5
+90°C
Quiescent Current vs. Input
FIGURE 2-4:
Current.
80
70
GND Current (µA)
60
50
40
30
20
10
0
25
Ground Current vs. Load
V
OUT
= 3.3V
I
OUT
= 0 µA
V
OUT
= 6.0V
V
IN
= 7.0V
-45°C
+25°C
0°C
V
OUT
= 3.3V
V
IN
= 4.3V
6
7
8
9
10
50
75
100
125
150
Input Voltage (V)
Load Current (mA)
FIGURE 2-2:
Voltage.
30.00
Quiescent Current (µA)
29.00
28.00
27.00
26.00
25.00
7
7.5
0°C
-45°C
+25°C
Quiescent Current vs. Input
FIGURE 2-5:
Current.
30.00
Quiescent Current (µA)
28.00
26.00
24.00
22.00
20.00
V
OUT
= 3.3V
V
IN
= 4.3V
Ground Current vs. Load
V
OUT
= 6.0V
I
OUT
= 0 µA
+90°C
V
OUT
= 6.0V
V
IN
= 7.0V
I
OUT
= 0 mA
V
OUT
= 0.9V
V
IN
= 2.0V
8
8.5
9
9.5
10
-45
-22.5
0
22.5
45
67.5
90
Input Voltage (V)
Junction Temperature (°C)
FIGURE 2-3:
Voltage.
Quiescent Current vs. Input
FIGURE 2-6:
Quiescent Current vs.
Junction Temperature.
2010 Microchip Technology Inc.
DS22051D-page 5
