MCP6021/1R/2/3/4
Rail-to-Rail Input/Output, 10 MHz Op Amps
Features
•
•
•
•
Rail-to-Rail Input/Output
Wide Bandwidth: 10 MHz (typical)
Low Noise: 8.7 nV/Hz at 10 kHz (typical)
Low Offset Voltage:
- Industrial Temperature: ±500 µV (max.)
- Extended Temperature: ±250 µV (max.)
Mid-Supply V
REF
: MCP6021 and MCP6023
Low Supply Current: 1 mA (typical)
Total Harmonic Distortion:
- 0.00053% (typical, G = 1 V/V)
Unity Gain Stable
Power Supply Range: 2.5V to 5.5V
Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Description
The MCP6021, MCP6021R, MCP6022, MCP6023 and
MCP6024 from Microchip Technology Inc. are rail-to-
rail input and output operational amplifiers with high
performance. Key specifications include: wide band-
width (10 MHz), low noise (8.7 nV/Hz), low input offset
voltage and low distortion (0.00053% THD+N). The
MCP6023 also offers a Chip Select pin (CS) that gives
power savings when the part is not in use.
The single MCP6021 and MCP6021R are available in
SOT-23-5 packages. The single MCP6021, single
MCP6023 and dual MCP6022 are available in 8-lead
PDIP, SOIC and TSSOP packages. The Extended
Temperature single MCP6021 is available in 8-lead
MSOP. The quad MCP6024 is offered in 14-lead PDIP,
SOIC and TSSOP packages.
The MCP6021/1R/2/3/4 family is available in Industrial
and Extended temperature ranges. It has a power
supply range of 2.5V to 5.5V.
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Automotive
Multi-Pole Active Filters
Audio Processing
DAC Buffer
Test Equipment
Medical Instrumentation
Package Types
MCP6021
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
MCP6022
PDIP, SOIC, TSSOP
5 V
DD
V
OUTA
1
V
INA
- 2
4 V
IN
- V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
-
5 V
INB
+
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
MPLAB
®
Mindi™ Analog Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6021R
SOT-23-5
V
OUT
1
V
DD
2
V
IN
+ 3
5 V
SS
4 V
IN
-
MCP6023
PDIP, SOIC, TSSOP
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 V
REF
Typical Application
Photo
Detector
5.6 pF
100 k
MCP6021
PDIP, SOIC,
MSOP, TSSOP
NC 1
V
IN
- 2
V
IN
+ 3
V
SS
4
100 pF
MCP6021
V
DD
/2
8 NC
7 V
DD
V
OUTA
1
6 V
OUT
V
INA
- 2
V
INA
+ 3
5 V
REF
MCP6024
PDIP, SOIC, TSSOP
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
V
DD
4
V
INB
+ 5
Transimpedance Amplifier
V
INB
- 6
V
OUTB
7
2001-2017 Microchip Technology Inc.
DS20001685E-page 1
MCP6021/1R/2/3/4
NOTES:
DS20001685E-page 2
2001-2017 Microchip Technology Inc.
MCP6021/1R/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2, Input Voltage Limits.
Absolute Maximum Ratings†
V
DD
– V
SS
........................................................................7.0V
Current Analog Input Pins (V
IN
+, V
IN
-)..........................±2 mA
Analog Inputs (V
IN
+, V
IN
-) ††......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs.......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD Protection on All Pins (HBM; MM)
2 kV; 200V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2
and R
L
= 10 kto V
DD
/2.
Parameters
Input Offset
Input Offset Voltage:
Industrial Temperature Parts
Extended Temperature Parts
Extended Temperature Parts
Input Offset Voltage Temperature Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current:
Industrial Temperature Parts
Extended Temperature Parts
Input Offset Current
Common-Mode Input Impedance
Differential Input Impedance
Common-Mode
Common-Mode Input Range
Common-Mode Rejection Ratio
V
CMR
CMRR
CMRR
CMRR
Voltage Reference (MCP6021 and MCP6023 only)
V
REF
Accuracy (V
REF
– V
DD
/2)
V
REF
Temperature Drift
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
2.5
0.5
—
1.0
5.5
1.35
V
mA
I
O
= 0
V
OL
, V
OH
I
SC
I
SC
V
SS
+ 15
—
—
—
±30
±22
V
DD
– 20
—
—
mV
mA
mA
0.5V input overdrive
V
DD
= 2.5V
V
DD
= 5.5V
A
OL
90
110
—
dB
V
CM
= 0V,
V
OUT
= V
SS
+ 0.3V to V
DD
– 0.3V
V
REF_ACC
V
REF
/T
A
-50
—
—
±100
+50
—
mV
µV/°C T
A
= -40°C to +125°C
V
SS
– 0.3
74
70
74
—
90
85
90
V
DD
+ 0.3
—
—
—
V
dB
dB
dB
V
DD
= 5V, V
CM
= -0.3V to 5.3V
V
DD
= 5V, V
CM
= 3.0V to 5.3V
V
DD
= 5V, V
CM
= -0.3V to 3.0V
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
1
30
640
±1
10
13
||6
10 ||3
13
Sym.
Min.
Typ.
Max.
Units
Conditions
V
OS
V
OS
V
OS
V
OS
/T
A
PSRR
-500
-250
-2.5
—
74
—
—
—
±3.5
90
+500
+250
+2.5
—
—
—
150
5,000
—
—
—
µV
µV
mV
V
CM
= 0V
V
CM
= 0V, V
DD
= 5.0V
V
CM
= 0V, V
DD
= 5.0V,
T
A
= -40°C to +125°C
V
CM
= 0V
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
pA
pA
||pF
||pF
T
A
= +85°C
T
A
= +125°C
2001-2017 Microchip Technology Inc.
DS20001685E-page 3
MCP6021/1R/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 kto V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Settling Time, 0.2%
Slew Rate
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +1 V/V, R
L
= 600
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +100 V/V
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
2.9
8.7
3
—
—
—
µVp-p
f = 0.1 Hz to 10 Hz
nV/Hz f = 10 kHz
fA/Hz f = 1 kHz
GBWP
PM
t
SETTLE
SR
THD + N
THD + N
THD + N
THD + N
THD + N
—
—
—
—
—
—
—
—
—
10
65
250
7.0
0.00053
0.00064
0.0014
0.0009
0.005
—
—
—
—
—
—
—
—
—
MHz
°
ns
V/µs
%
%
%
%
%
V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
G = +1 V/V
G = +1 V/V, V
OUT
= 100 mV
p-p
Sym.
Min.
Typ.
Max.
Units
Conditions
Total Harmonic Distortion Plus Noise
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, R
L
= 10 kto V
DD
/2 and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z Time
Hysteresis
t
ON
t
OFF
V
HYST
—
—
—
2
0.01
0.6
10
—
—
µs
µs
V
G = +1, V
IN
= V
SS
,
CS = 0.2 V
DD
to V
OUT
= 0.45 V
DD
time
G = +1, V
IN
= V
SS
,
CS = 0.8 V
DD
to V
OUT
= 0.05 V
DD
time
V
DD
= 5.0V, internal switch
V
IH
I
CSH
I
SS
I
O(LEAK)
0.8 V
DD
—
-2
—
—
0.01
-0.05
0.01
V
DD
2.0
—
—
V
µA
µA
µA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
-1.0
—
0.01
0.2 V
DD
—
V
µA
CS = V
SS
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20001685E-page 4
2001-2017 Microchip Technology Inc.
MCP6021/1R/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-TSSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
JA
JA
JA
JA
JA
JA
JA
JA
—
—
—
—
—
—
—
—
256
85
163
206
124
70
120
100
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
—
—
—
—
+85
+125
+125
+150
°C
°C
°C
°C
(Note
1)
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
The industrial temperature devices operate over this Extended temperature range, but with reduced performance. In any
case, the internal Junction Temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
1.1
CS
t
ON
V
OUT
I
SS
I
CS
High-Z
-50 nA
(typical)
10 nA
(typical)
Amplifier On
-1 mA
(typical)
Test Circuits
t
OFF
High-Z
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.7 “Supply Bypass”.
-50 nA
(typical)
10 nA
(typical)
V
IN
R
N
1k
V
DD
0.1 µF 1 µF
C
B1
C
B2
V
OUT
R
L
10 k
V
L
10 nA
(typical)
MCP6021
R
F
2k
C
L
60 pF
V
DD
/2 R
G
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6023.
2k
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
V
DD
/2 R
N
1k
0.1 µF 1 µF
C
B1
C
B2
V
OUT
R
L
10 k
V
L
MCP6021
R
F
2k
C
L
60 pF
V
IN
R
G
2k
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
2001-2017 Microchip Technology Inc.
DS20001685E-page 5
