MCP6041/2/3/4
600 nA, Rail-to-Rail Input/Output Op Amps
Features
•
•
•
•
•
•
•
•
•
Low Quiescent Current: 600 nA/amplifier (typical)
Rail-to-Rail Input/Output
Gain Bandwidth Product: 14 kHz (typical)
Wide Supply Voltage Range: 1.4V to 6.0V
Unity Gain Stable
Available in Single, Dual, and Quad
Chip Select (CS) with MCP6043
Available in 5-lead and 6-lead SOT-23 Packages
Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Description
The MCP6041/2/3/4 family of operational amplifiers
(op amps) from Microchip Technology Inc. operate with
a single supply voltage as low as 1.4V, while drawing
less than 1 µA (maximum) of quiescent current per
amplifier. These devices are also designed to support
rail-to-rail input and output operation. This combination
of features supports battery-powered and portable
applications.
The MCP6041/2/3/4 amplifiers have a gain-bandwidth
product of 14 kHz (typical) and are unity gain stable.
These specifications make these op amps appropriate
for low frequency applications, such as battery current
monitoring and sensor conditioning.
The MCP6041/2/3/4 family operational amplifiers are
offered in single (MCP6041), single with Chip Select
(CS) (MCP6043), dual (MCP6042), and quad
(MCP6044) configurations. The MCP6041 device is
available in the 5-lead SOT-23 package, and the
MCP6043 device is available in the 6-lead SOT-23
package.
Applications
•
•
•
•
Toll Booth Tags
Wearable Products
Temperature Measurement
Battery Powered
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer & Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6041
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6043
PDIP, SOIC, MSOP
NC
1
V
IN
–
2
V
IN
+
3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
Related Devices
• MCP6141/2/3/4: G = +10 Stable Op Amps
MCP6041
SOT-23-5
V
OUT
1
5 V
DD
4 V
IN
–
V
SS
2
V
IN
+ 3
MCP6043
SOT-23-6
V
OUT
1
V
SS
2
V
IN
+
3
6 V
DD
5 CS
4 V
IN
–
Typical Application
I
DD
1.4V
to
6.0V
10Ω
100 kΩ
MCP604X
1 MΩ
V
DD
–
V
OUT
= -----------------------------------------
-
(
10 V/V
)
⋅
(
10
Ω
)
V
DD
V
OUT
MCP6042
PDIP, SOIC, MSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
MCP6044
PDIP, SOIC, TSSOP
V
OUTA
1
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
7 V
OUTB
V
INA
–
2
6 V
INB
– V
INA
+
3
5 V
INB
+
V
DD
4
V
INB
+
5
V
INB
–
6
V
OUTB
7
I
DD
High Side Battery Current Sensor
©
2008 Microchip Technology Inc.
DS21669C-page 1
MCP6041/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1 “Rail-to-Rail Input”
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+, V
IN
–) ............. V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ..................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature....................................–65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM)
................ ≥
4 kV; 200V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, and R
L
= 1 MΩ to V
L
(refer to
Figure 1-2
and
Figure 1-3).
Parameters
Input Offset
Input Offset Voltage
Drift with Temperature
Sym
V
OS
ΔV
OS
/ΔT
A
ΔV
OS
/ΔT
A
Min
-3
—
—
70
—
—
—
—
—
—
V
SS
−0.3
62
60
60
95
Typ
—
±2
±15
85
1
20
1200
1
10
13
||6
10 ||6
—
80
75
80
115
13
Max
+3
—
—
—
—
100
5000
—
—
—
V
DD
+0.3
—
—
—
—
Units
mV
µV/°C
µV/°C
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
dB
dB
Conditions
V
CM
= V
SS
V
CM
= V
SS
, T
A
= -40°C to +85°C
V
CM
= V
SS
,
T
A
= +85°C to +125°C
V
CM
= V
SS
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Range
Common-Mode Rejection Ratio
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
CMRR
CMRR
T
A
= +85°
T
A
= +125°
V
DD
= 5V, V
CM
= -0.3V to 5.3V
V
DD
= 5V, V
CM
= 2.5V to 5.3V
V
DD
= 5V, V
CM
= -0.3V to 2.5V
R
L
= 50 kΩ to V
L
,
V
OUT
= 0.1V to V
DD
−0.1V
R
L
= 50 kΩ to V
L
,
0.5V input overdrive
R
L
= 50 kΩ to V
L
,
A
OL
≥
95 dB
V
DD
= 1.4V
V
DD
= 5.5V
(Note 1)
I
O
= 0
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Linear Region Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
V
DD
I
Q
1.4
0.3
—
0.6
6.0
1.0
V
µA
V
OL
, V
OH
V
OVR
I
SC
I
SC
V
SS
+ 10
V
SS
+ 100
—
—
—
—
2
20
V
DD
−
10
V
DD
−
100
—
—
mV
mV
mA
mA
A
OL
All parts with date codes November 2007 and later have been screened to ensure operation at V
DD
= 6.0V. However,
the other minimum and maximum specifications are measured at 1.4V and/or 5.5V.
DS21669C-page 2
©
2008 Microchip Technology Inc.
MCP6041/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
, and C
L
= 60 pF (refer to
Figure 1-2
and
Figure 1-3).
Parameters
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Sym
GBWP
SR
PM
E
ni
e
ni
i
ni
Min
—
—
—
—
—
—
Typ
14
3.0
65
5.0
170
0.6
Max
—
—
—
—
—
—
Units
kHz
V/ms
°
µV
P-P
G = +1 V/V
Conditions
f = 0.1 Hz to 10 Hz
nV/√Hz f = 1 kHz
fA/√Hz f = 1 kHz
MCP6043 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
, and C
L
= 60 pF (refer to
Figure 1-2
and
Figure 1-3).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
SS
—
—
5
V
SS
+0.3
—
V
pA
CS = V
SS
V
IH
I
CSH
I
SS
I
OLEAK
V
DD
–0.3
—
—
—
—
5
-20
20
V
DD
—
—
—
V
pA
pA
pA
CS = V
DD
CS = V
DD
CS = V
DD
t
ON
t
OFF
V
HYST
—
—
—
2
10
0.6
50
—
—
ms
µs
V
G = +1V/V, CS = 0.3V to
V
OUT
= 0.9V
DD
/2
G = +1V/V, CS = V
DD
–0.3V to
V
OUT
= 0.1V
DD
/2
V
DD
= 5.0V
CS
V
IL
t
ON
V
IH
t
OFF
High-Z
-0.6 µA
(typical)
V
OUT
High-Z
I
SS
-20 pA
(typical)
-20 pA
(typical)
I
CS
5 pA
(typical)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6043 only).
©
2008 Microchip Technology Inc.
DS21669C-page 3
MCP6041/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
Sym
T
A
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
-40
-40
-40
-65
—
—
—
—
—
—
—
—
Typ
—
—
—
—
256
230
85
163
206
70
120
100
Max
+85
+125
+125
+150
—
—
—
—
—
—
—
—
Units
°C
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Conditions
Industrial Temperature parts
Extended Temperature parts
(Note 1)
The MCP6041/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with reduced
performance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification
of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.6 “Supply Bypass”.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
DD
/2 R
G
R
F
V
L
R
L
V
IN
MCP604X
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
IN
R
G
R
F
V
L
R
L
V
DD
/2
MCP604X
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS21669C-page 4
©
2008 Microchip Technology Inc.
MCP6041/2/3/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +6.0V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
, and C
L
= 60 pF.
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
18%
Percentage of Occurrences
1124 Samples
V
DD
= 1.4V and 5.5V
V
CM
= V
SS
Percentage of Occurrences
16%
14%
12%
10%
8%
6%
4%
2%
0%
-32
-28
245 Samples
1 Representative Lot
T
A
= +85°C to +125°C
V
DD
= 1.4V
V
CM
= V
SS
-3
-2
-1
0
1
Input Offset Voltage (mV)
2
3
-24 -20 -16 -12 -8
-4
0
Input Offset Voltage Drift (µV/°C)
4
FIGURE 2-1:
12%
11%
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage Drift
with T
A
= +85°C to +125°C and V
DD
= 1.4V.
24%
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
239 Samples
1 Representative Lot
T
A
= +85°C to +125°C
V
DD
= 5.5V
V
CM
= V
SS
Percentage of Occurrences
-10
-8
-6 -4 -2
0
2
4
6
Input Offset Voltage Drift (µV/°C)
8
10
Percentage of Occurrences
1124 Samples
T
A
= -40°C to +85°C
V
DD
= 1.4V
V
CM
= V
SS
-32
-28
FIGURE 2-2:
Input Offset Voltage Drift
with T
A
= -40°C to +85°C.
2000
Input Offset Voltage (µV)
1500
1000
500
0
-500
-1000
-1500
-2000
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Common Mode Input Voltage (V)
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
V
DD
= 1.4V
Representative Part
-24 -20 -16 -12 -8
-4
0
Input Offset Voltage Drift (µV/°C)
4
FIGURE 2-5:
Input Offset Voltage Drift
with T
A
= +25°C to +125°C and V
DD
= 5.5V.
2000
Input Offset Voltage (µV)
1500
1000
500
0
-500
-1000
-1500
-2000
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
6.0
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
V
DD
= 5.5V
Representative Part
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.4V.
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 5.5V.
©
2008 Microchip Technology Inc.
DS21669C-page 5
电源技术
